Spin splitting of surface states in HgTe quantum wells
We report on beating appearance in Shubnikov–de Haas oscillations in conduction band of 18–22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subb...
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| Datum: | 2019 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Russian |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2019
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| Schriftenreihe: | Физика низких температур |
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| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/175794 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Spin splitting of surface states in HgTe quantum wells / A.A. Dobretsova, Z.D. Kvon, S.S. Krishtopenko, N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2019. — Т. 45, № 2. — С. 185-191. — Бібліогр.: 34 назв. — рос. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | We report on beating appearance in Shubnikov–de Haas oscillations in conduction band of 18–22 nm HgTe
quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the
Fermi level arising due to Rashba-like spin splitting of the first conduction subband H₁. The difference ΔNs in
two concentrations as a function of the gate voltage is qualitatively explained by a proposed toy electrostatic
model involving the surface states localized at quantum well interfaces. Experimental values of ΔNs are also in a
good quantitative agreement with self-consistent calculations of Poisson and Schrödinger equations with eightband k p⋅ Hamiltonian. Our results clearly demonstrate that the large spin splitting of the first conduction
subband is caused by surface nature of H₁ states hybridized with the heavy-hole band. |
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