The overheating effects in germanium quantum well with two subbands occupied
The charge carrier overheating effect was studied in the p-type Si₀.₄Ge₀.₆/Ge/Si₀.₄Ge₀.₆ heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τh-ph at weak magnetic fields demonstrated transition of the 2D system from regime of “partial inelasticity” ch...
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| Date: | 2018 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2018
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| Series: | Физика низких температур |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/176210 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The overheating effects in germanium quantum well with two subbands occupied / I.B. Berkutov, V.V. Andrievskii, Yu.A. Kolesnichenko, Yu.F. Komnik, O.A. Mironov // Физика низких температур. — 2018. — Т. 44, № 8. — С. 1018-1024. — Бібліогр.: 15 назв. — англ. |
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