Effect of γ-irradiation on the structure of high density polyethylene composites with GaAs and GaAs<Te> fillers
IR-Fourier spectroscopy was used to study structural changes in γ-irradiated high density polyethylene composites with GaAs and GaAs<Te> semiconductor fillers at room temperature. From the dose dependence of the crystallinity degree of the HDPE/GaAs and HDPE/GaAs<Te> composites, it was f...
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Datum: | 2020 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | English |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2020
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Schriftenreihe: | Вопросы атомной науки и техники |
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Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/194410 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Zitieren: | Effect of γ-irradiation on the structure of high density polyethylene composites with GaAs and GaAs<Te> fillers / N.N. Gadzhieva, G.B. Akhmedova // Problems of atomic science and tecnology. — 2020. — № 4. — С. 28-30. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of UkraineZusammenfassung: | IR-Fourier spectroscopy was used to study structural changes in γ-irradiated high density polyethylene composites with GaAs and GaAs<Te> semiconductor fillers at room temperature. From the dose dependence of the crystallinity degree of the HDPE/GaAs and HDPE/GaAs<Te> composites, it was found that the HDPE/GaAs<Te> composites are more radiation-resistant in the absorbed dose region Φγ = 5…150 kGy compared to the HDPE/GaAs composites. The observed change in the degree of crystallinity is associated with a change in the supramolecular structure of γ-irradiated composites. |
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