Modeling of information recording and selective etching processes in inorganic resists
Theoretical consideration and computer modeling of information pit recording and etching processes in chalcogenide vitreous semiconductors are proposed, namely we demonstrate how to record and develop information pits with the necessary shape and sizes in the inorganic resist using focused Gaussian...
Збережено в:
| Дата: | 2005 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут проблем реєстрації інформації НАН України
2005
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| Назва видання: | Реєстрація, зберігання і обробка даних |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/50773 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modeling of information recording and selective etching processes in inorganic resists / A.N. Morozovska, S.A. Kostyukevych // Реєстрація, зберігання і оброб. даних. — 2005. — Т. 7, № 3. — С. 3-16. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Theoretical consideration and computer modeling of information pit recording and etching processes in chalcogenide vitreous semiconductors are proposed, namely we demonstrate how to record and develop information pits with the necessary shape and sizes in the inorganic resist using focused Gaussian laser beam and selective etching. It has been shown that phototransformed region cross-section could be almost trapezoidal or parabolic depending on the resist material optical absorption, recording beam power, exposure, etchant selectivity and etching time. Namely, during the laser illumination and thermal heating caused by it, photosensitive material is the quasi-equilibrium microscopic mixture of the transformed and nontransformed phases with different optical absorption coefficients: temperature dependent near the absorption edge «transformed» coefficient бe and almost independent coefficient α0 . If αe ≤ α0 e after thermal heating, the photo-transformed region «bleaches» and the pit depth increases more rapidly under the following laser power increasing. If αe > α0 , the phototransformed region «darkens» and the pit depth increases sub-linearly or even saturates under the following laser power increasing. Thus, almost parabolic or flattened pits appear when αe ≥ α0, whereas the pits with elongated tops appear when αe << α0. After illumination, the spatial distribution of photo-transformed material fraction was calculated using the Kolmogorov-Awrami equation. Analyzing obtained results, we derived a rather simple approximate analytical expression for the dependence of the phototransformed region width and depth on the recording Gaussian beam power, radius and exposure time. Then the selective etching process was simulated numerically. The obtained results quantitatively describe the characteristics of pits recorded by the Gaussian laser beam in thin layers of As₄₀S₆₀ chalcogenide semiconductor. Our model open possibilities how to select the necessary recording procedure and etching conditions in order to obtain pits with the optimum shape and sizes. |
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