Performance improvement of silicon solar cells by nanoporous silicon coating

In the present paper the method is shown to improve the photovoltaic parameters of screenprinted silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon sola...

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Datum:	2012
Hauptverfasser:	Dzhafarov, T.D., Aslanov, S.S., Ragimov, S.H., Sadigov, M.S., Nabiyeva, A.F., Aydin Yuksel, S.
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Sprache:	English
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Schriftenreihe:	Технология и конструирование в электронной аппаратуре
Schlagworte:	Материалы электроники
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Zitieren:	Performance improvement of silicon solar cells by nanoporous silicon coating / T.D. Dzhafarov, S.S. Aslanov, S.H. Ragimov, M.S. Sadigov, A.F. Nabiyeva, S. Aydin Yuksel // Технология и конструирование в электронной аппаратуре. — 2012. — № 2. — С. 42-46. — Бібліогр.: 26 назв. — рос.

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spelling	irk-123456789-516692013-12-07T03:07:42Z Performance improvement of silicon solar cells by nanoporous silicon coating Dzhafarov, T.D. Aslanov, S.S. Ragimov, S.H. Sadigov, M.S. Nabiyeva, A.F. Aydin Yuksel, S. Материалы электроники In the present paper the method is shown to improve the photovoltaic parameters of screenprinted silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed. Исследовано улучшение фотоэлектрических параметров кремниевых солнечных элементов, полученных методом трафаретной печати, за счет образования слоя пористого кремния на фронтальной поверхности элемента. Рассмотрены возможные механизмы, ответственные за улучшение производительности кремниевой солнечной ячейки. Досліджено поліпшення фотоелектричних параметрів кремнієвих сонячних елементів, отриманих методом трафаретного друку, за рахунок утворення шару пористого кремнію на фронтальній поверхні елемента. Розглянуто можливі механізми, відповідальні за поліпшення продуктивності кремнієвого сонячного елемента. 2012 Article Performance improvement of silicon solar cells by nanoporous silicon coating / T.D. Dzhafarov, S.S. Aslanov, S.H. Ragimov, M.S. Sadigov, A.F. Nabiyeva, S. Aydin Yuksel // Технология и конструирование в электронной аппаратуре. — 2012. — № 2. — С. 42-46. — Бібліогр.: 26 назв. — рос. 2225-5818 http://dspace.nbuv.gov.ua/handle/123456789/51669 621.315 en Технология и конструирование в электронной аппаратуре Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
language	English
topic	Материалы электроники Материалы электроники
spellingShingle	Материалы электроники Материалы электроники Dzhafarov, T.D. Aslanov, S.S. Ragimov, S.H. Sadigov, M.S. Nabiyeva, A.F. Aydin Yuksel, S. Performance improvement of silicon solar cells by nanoporous silicon coating Технология и конструирование в электронной аппаратуре
description	In the present paper the method is shown to improve the photovoltaic parameters of screenprinted silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.
format	Article
author	Dzhafarov, T.D. Aslanov, S.S. Ragimov, S.H. Sadigov, M.S. Nabiyeva, A.F. Aydin Yuksel, S.
author_facet	Dzhafarov, T.D. Aslanov, S.S. Ragimov, S.H. Sadigov, M.S. Nabiyeva, A.F. Aydin Yuksel, S.
author_sort	Dzhafarov, T.D.
title	Performance improvement of silicon solar cells by nanoporous silicon coating
title_short	Performance improvement of silicon solar cells by nanoporous silicon coating
title_full	Performance improvement of silicon solar cells by nanoporous silicon coating
title_fullStr	Performance improvement of silicon solar cells by nanoporous silicon coating
title_full_unstemmed	Performance improvement of silicon solar cells by nanoporous silicon coating
title_sort	performance improvement of silicon solar cells by nanoporous silicon coating
publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate	2012
topic_facet	Материалы электроники
url	http://dspace.nbuv.gov.ua/handle/123456789/51669
citation_txt	Performance improvement of silicon solar cells by nanoporous silicon coating / T.D. Dzhafarov, S.S. Aslanov, S.H. Ragimov, M.S. Sadigov, A.F. Nabiyeva, S. Aydin Yuksel // Технология и конструирование в электронной аппаратуре. — 2012. — № 2. — С. 42-46. — Бібліогр.: 26 назв. — рос.
series	Технология и конструирование в электронной аппаратуре
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fulltext	Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012, ¹ 242 MATERIALS OF ELECTRONICS UDC 621.315 Dr.Sc. T. D. DZHAFAROV, Ph.D. S. S. ASLANOV, Ph.D. S. H. RAGIMOV, M. S. SADIGOV, A. F. NABIYEVA, Ph.D. S. AYDIN YUKSEL1 Azerbaijan, Baku, Institute of Physics of ANAS; Turkey, 1University of Kocaeli E-mail: caferov@physics.ab.az PERFORMANCE IMPROVEMENT OF SILICON SOLAR CELLS BY NANOPOROUS SILICON COATING The surface modification can be used to reduce the surface reflectance and thereby improve the conversion efficiency of silicon solar cells. The technique widely used for this purpose in industrial applications is anisotropic chemical texturization, using an alkaline solution, NaOH solution, etc [1]. However, the reflectance of the textured structures is usually over 10% in the range of wavelength from 300 to 1200 nm. Moreover, the pyramid texturing has a few disadvantages. Firstly, the results are not always reproducible, secondly, it is difficult to apply the standard indus- trial process due to its high cost. In recent years, tetramethylammonium hydroxide solution has been used for random pyramid texturization [2]. In order to achieve a lower reflectance, antire- flection coating (ARC) is widely used for silicon solar cell technology. ARC presents thin film of transparent material with refractive index (n) between those of air (n=1) and Si (n=3,84). ARCs are generally fabricated by plasma-enhanced che- mical vapor deposition, which increases in the cost of solar cells [3]. The solar radiation spectrum expands from ultraviolet and visible to infrared wavelengths. A single-layer antireflection coating allows a reduc- tion in reflectance only in a narrow wavelength region of the solar spectrum. Moreover, the effective reflectance of such coatings still represents about 11% of the incident photon flux [4]. Single-layer LARCs include SiNx, Ta2O3, ZnS, Al2O3, etc. A wider spectral range (450—700 nm) and lower effective reflectance may be obtained by increasing the number of layers, i. e. a double-layers anti- reflection coating [5]. The most efficient systems are currently the ZnS/MgF2, SiO2/TiO2 double- layer coatings. However, these layers are deposited in vacuum by PECVD method which is a major drawback for low-cost industrial applications. In the present paper the method is shown to improve the photovoltaic parameters of screen- printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed. Keywords: silicon, solar cell, efficiency, nanoporous silicon. A promising technique is the formation of porous silicon (PS) on the frontal surface of silicon solar cell [6]. The crystalline structure of PS presents a network of silicon in nano(micro)-sized regions surrounded by void space with a very high surface- to-volume ratio (up to 103 m2/cm3). In the spongi- form porous silicon structure quantum effects play the fundamental role (quantum sponge) [7]. The pore surfaces are covered with silicon hydrides and silicon oxides and therefore are chemically very active. These features of PS (a quantum system, a sponge structure and extremely large pore surfaces) ensure many possible applications, such as light emitting diode, antireflection coating for solar cells, hydrogen fuel cell, gas sensor and other applications [8]. A very important advantage of using PS for solar cells is that the surface roughness can reduce the reflectance to very low values. Moreover, adjusting the band gap of nanoporous silicon during fabrication process is also possible [9]. These peculiarities of PS together with economy of fabrication process make this material very attractive for the industry of solar cells fabrication industry. The effective refractive index of PS (n=2—3) is lower than that of bulk silicon (n=3,84) and it can be altered by changing the porosity and therefore be used as ARC for silicon solar cells [10]. The potential advantages of nanoporous silicon layer for silicon solar cells consist in reducing of surface reflectance, broadening of band gap and absorption spectrum, surface passivation and removal of the dead diffusion region, possibility to convert ultraviolet energy of solar radiation into visible light, which is absorbed more efficiently in silicon [11—13]. The purpose of this paper is to improve the photovoltaic parameters of the screen-printed silicon solar cells by a nanoporous silicon layer formation Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012, ¹ 2 43 MATERIALS OF ELECTRONICS on the frontal surface of the cell. For that, the structural properties, luminescence and integrated reflection spectra of PS layer have been investi- gated. The photovoltaic characteristics and the photosensitivity spectra of (n+—p)Si solar cells with and without PS layer on the frontal surface of the cell have been measured and compared. Formation of experimental samples Monocrystalline p-type silicon wafers with orientation of (100), resistivity of about 3 Ω⋅cm and thickness of 250—380 µm were used for fabrication of solar cells by screen-printed pro- cess [14]. The wafers were cleaned in NaOH:H2O (1:4 in volume) at 80°C for 10 min, in HCl at room temperature for 10 min and then etched in HF:H2O (1:1 in volume) for 1 min. Then the samples were washed with deionized water. Cleaned surface of wafer was coated with phospho- rus spin-on dopant (KFK-50-10T type) at room temperature by 2000 rpm for 10 s. Then the coated samples were baked at 600°C for 2 min for destruction of the coating. The n+—p junction was formed by phosphorus diffusion from spin-on dopant into p-type silicon substrate at 950°C for 25 min in a tube furnace. The phosphosilicate glass layer was removed from the silicon surface with hydrofluoric acid solution (HF:H2O, 1:9). As a result of phosphorus diffusion, n+ emitter layer with 0,5—1,0 µm thickness and 15—20 Ω/ sheet resistance was formed. The electrical contacts were made by screen-printed process with a Du Ponte photovoltaic silver paste for front contact and silver with 3% aluminum paste for the back contact. Samples with silver contacts were baked at 200°C for 10 min and then metallization was done at 800°C for 10 min in the conventional annealing furnace. The structure of the PS/(n+—p)Si is given on fig. 1. Antireflection coating, texturization and surface passivation were not carried out in this work. Choice of optimal thickness of porous silicon layer as ARC on surface of n+—p silicon solar cell and the refractive index which strongly depends on porosity [15] was defined from conditions presented below. The optimization of parameters of ARC (the refractive index and thickness) was based on the stratified medium theory and the Bruggeman effec- tive medium approximation [16]. The zero-reflection for normal incidence of light on ARC/Si system is given in [17] ARC 0 Sn n n= (1) where nARC, nSi and n0 are the refractive indexes of antireflection coating, silicon and the ambient medium respectively. The optimal single layer thickness (dARC) for minimum reflection for wavelength λ is defined by equation [18] ARC ARC . 4 d n λ= (2) If conditions (1) and (2) for air/ARC/Si system are to be satisfied (n0=1 for air and nSi=3,84 for Si), then the optimal values of refractive index and thickness (a quarter of wavelength) of porous silicon layer serving as ARC must be (for λ=650 nm)nARC=1,96 and dARC=83 nm respec- tively. For glass/PS/Si system with encapsulating glass refractive index of ng=1,55, optimal values for nARC and dARC of PS are 2,45 and 65 nm respectively. Taking into account the refractive index, depending on porosity of porous silicon given in [15], one may conclude that the porous silicon layer of 80—90 nm thickness and about of 55% porosity (n=2) can act as ARC having minimum reflectance, which will improve the photovoltaic parameters of PS/(n+—p)Si solar cells. Formation of porous silicon layer on n+-surface of device was performed on the final step of the solar cell fabrication sequence. Fabrication of PS layer on n+—p junction was carried out at constant current under illumination, using the teflon electrochemical cell, which design presupposes that there is an ohmic contact to the back surface of silicon cell. The n+—p junction was placed in an electrolyte solution HF:ethanol:water (1:1:1 in volume). A platinum wire electrode was used as a cathode at a distance of 3 cm from n+Si surface which acted as the anode. For obtaining PS layers with different thicknesses, a set of runs was performed by using a constant current density for different anodization time. The growth rate of porous silicon on Si substrate, measured for current density of 60 mA/cm2, was about 8 nm/s, which is similar to the data presented in [19]. Therefore, the time of electrochemical etching under a constant current of 40, 50 or 60 mA/cm2 was 8—15 s. As a result, blue colored PS layer between the grid fingers on the surface of n+-emitter silicon solar cell have been obtained (fig. 1). Moreover, the porous silicon layers were formed also on silicon wafers. The electrical contact on back surface of n-type silicon wafers with resisti- vity of ρ=8⋅10–3 Ω⋅cm was made by screen-printed process with Ag/Al paste. Electrochemical etching Ag front contact PS n+-Si p-Si Ag/Al black contact Fig. 1. The structure of the PS/(n+—p) Si solar cell Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012, ¹ 244 MATERIALS OF ELECTRONICS of silicon wafers was carried out under the same conditions as those for n+—p junction, but only the silicon wafers were etched longer than the ready solar cells. The anodization time ranged from 10 seconds to 30 minute. For some measurements, the PS layers were then detached from Si substrate by electro polishing process [20]. Free-standing PS layers were characterized by porosity, thickness, resistivity, luminescence and reflectance measure- ments. Resistivity measuring, carried out by Van der Pauw technique on the free-standing porous silicon layer of 60% porosity, gave 3⋅104 Ω⋅cm. Experimental technique The average porosity (P) and thickness (d) of porous layer was obtained by gravimetric technique [20, 21]. The fabricated solar cells (without and with porous silicon layers) were characterized by current-voltage measurements under simulated so- lar illumination (AM 1,5 G), using Solar Analyzer (“Prova 200”), and in the dark. The spectral distribution of photosensitivity (the short-circuit current) of cells was analyzed in the wavelength range 300—1100 nm at 300 K. The surface morphology and structural properties of prepared samples were obtained by using scanning electron microscopy (JSM-5410LV). The photolumi- nescence spectrum was performed using SDL spectrometer. A beam of 337,1 nm from nitrogen laser was used for excitation. An examination of photoluminescence peak intensity (at 580 nm) dis- tribution along PS layer thickness was performed by successive removal of thin films from PS (using KOH solution) and measuring photoluminescence intensity. The integrated reflectance of porous Si was measured at room temperature by UV-Vis spectrometer “Specord-250” in the wavelength range 300—1000 nm. The spectral response of solar cells was analyzed in the wavelength range 300— 1100 nm at 300 K. Discussion of the experiment results The gravimetric measuring of the average porosity for PF layers fabricated at current density of 40—60 mA/cm2 showed that it varies from 50 to 70%. Cross cut representation of nanoporous silicon layer showed that the pores have a conical form. Fig. 2 shows the photoluminescence spectrum of PS layer (60% porosity) on Si substrate. One can see that the spectrum illustrates the peak at λ=580 nm (the orange region of solar spectrum). Measurements of distribution of photoluminescence intensity along the thickness of PS layer (of thickness 10 µm) showed that the intensity appro- ximately linearly decreases from the surface into film thickness. These similar results were also ob- tained on investigations of samples with PS layers of different thickness. Observation of photolumi- nescence in PS at visible region of the spectrum can be interpreted by quantum confinement effect causing the confinement of the charge carriers in nano- crystalline silicon wall separating the pore [22]. The integrated reflectance spectra of the polished silicon surface before and after porous silicon layer (of 60% porosity) formation are plotted in fig. 3. The figure shows that the significant lowering of reflectance is observed in the PS layer (about 4% in the range of 400—1000 nm wavelength) as compared to polished silicon (about 38—45%). These data show that PS on n+—p silicon solar cell can be used as effective antireflection coating. The current-voltage characteristic of PS/n+Si structure (without n+—p junction) displays the ohmic behavior. The current-voltage characteristics of n+—p silicon solar cells without and with porous silicon layer (n+—pSi and PS/(n+—p)Si struc- tures respectively), measured under AM 1,5 illumi- nation, are presented in fig. 4. As a result of the PS coating, the increase of the short-circuit current density (Jsc) from 23,1 to 34,2 mA/cm2, the open- circuit voltage (Voc) increase from 500 to 520 mV and the conversion efficiency increase from 12,1 to 14,5%. Thus, the experimental results of the photovoltaic parameters for thirty solar cells before and after formation of PS layer on n+-emitter surface showed that the mean increment of photocurrent density is about 48%. At the same 1,2 1,0 0,8 0,6 0,4 0,2 0 In te ns it y, r . u. 500 550 600 650 700 Wavelength, nm Fig. 2. The photoluminescence spectra for porous silicon layer 60 40 20 0 R ef le ct io n, % 300 500 700 900 Wavelength, nm 2 1 Fig. 3. The reflection spectra of porous silicon (1) and silicon substrate (2) Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012, ¹ 2 45 MATERIALS OF ELECTRONICS time, the open-circuit voltage increase is about 4%. The fill factor remains approximately the same for cells with porous layer (ff=0,75) as compared to the solar cells without porous layer (ff=0,74). The mean efficiency of photovoltaic conversion for solar cells with PS layer increased from 12 to 14,5%, which equals a relative increment of about 20%. Analysis of the current-voltage characteristics of solar cells without and with PS layer showed that the series resistance of the cell changes weakly (from 3,09 to 2,94 Ω) and the parallel resistance increases (from 274 to 315 Ω) in the cells with 90 nm PS layer. The small decrease of the series resistance of PS/(n+—p)Si cell can be caused by decreasing of Ag/Si contact resistivity during the short-term etching for PS layer formation [23]. The increase in the parallel resistance of cell, which defines the resistance of junction, can be attributed to gethering of non-controlled impurities by both PS due to the gradient diffusion and electro- diffusion of impurities in PS/(n+—p)Si cell under electrical field, applied during PS fabrication in electrochemical setting [23]. Fig. 5 shows the value of photosensitivity for PS/(n+—p)Si cell is larger (by about 25%) and the spectral photosensitivity region is considerably wider than that for (n+—p)Si cell. Thus, the presence of porous silicon layer on surface of n+-emitter allows to improve significantly the photovoltaic characteristics of a PS/(n+—p)Si solar cell. The porous silicon layer performs two functions. On the one hand, it works as an antireflection coating, increasing the incident photon flow on p+—n junction, and on the other hand, it creates a wide-band gap optical window (about of 1,8— 2,0 eV for PS of 60% porosity [21, 25]), broadening the spectral region of photosensitivity of the cell to ultraviolet part of solar spectrum. Change of porosity along with the thickness of PS layer can also stimulate the improvement of the photovoltaic parameters of solar cells. Experimentally observed decrease of intensity of the photoluminescence peak at 580 nm along thickness of PS layer, containing pores of conical form, can be circumstantial evidence for decrease of porosity with thickness. Taking into account the fact that the band gap energy of nanoporous silicon increases with increment of porosity due to quantum confinement of carrier charges [21, 22, 25, 26], one can suppose that the porous silicon layer on (n+—p)Si cell is semiconductor with variable band gap width (changing from about 1,8—2,0 eV on front PS surface to 1,1 eV on PS/n+Si interface). As a result, the internal electrical field of the porous layer can also increase the photocurrent, generated in solar cell. It is well known that the photovoltaic para- meters of solar cell depend on the series resistance, resulting in performance degradation. Our estima- tions showed that contribution of additional resis- tance of the PS layer (thickness of 90 nm, surface area of 10 cm2 and resistivity of 3⋅104 Ω⋅cm) is neg- ligibly low (about 3⋅10–2 Ω) if compared to series resistance of (n+—p)Si solar cell (of about 2 Ω). *** Thereby, the comparative analysis of PS/Si and Si solar cells showed that the formation of nano- porous silicon layer onto the frontal surface of cell greatly improves its performance. The simpli- city and cheapness of the electrochemical fabrica- tion of PS on Si surface make it a suitable technique for high efficiently silicon solar cell manufacturing. REFERENCES 1. Green M. A. Limiting efficiency of bulk and thin-film silicon solar cells in the presence of surface recombination, Progr. Photovoltaic.— 1999.— Vol. 7.— P. 327—338 2. Papet P., Nichiporik O., Kaminski A. et al. 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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers // Appl. Phys. Lett.— 1990.— Vol. 57.— P. 1046—1054. 23. Firor K., Hogan S. Effect of processing parameters of thick film inks for solar cell metalization // Solar Cells.— 1981—1982. Vol. 5.— P. 87—100. 24. Abdullaev G. B., Dzhafarov T. D. Atomic Diffusion in Semiconductor Structures.— New York: Harwood Academic Publisher, 1987 25. Pickering C., Beale M. I. J., Robbins D. J., Pearson P. J., Greef R. Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon // J. Phys.— 1984.— Vol. C17.— P. 6535—6552. 26. Sagnes I., Halimaoui G., Vincent G., Badoz P. A. Optical absorption evidence of a quantum size effect in porous silicon // Appl. Phys. Lett.— 1993.— Vol. 62.— P. 1155—1161. Received 20.02 2012 ___________________________ Äæàôàðîâ Ò. Ä., Àñëàíîâ Ø. Ñ., Ðàãèìîâ Ø. Õ., Ñàäûãîâ Ì. Ñ., Íàáèåâà À. Ô., Àéäèí Þêñåë Ñ. Ïîâûøåíèå ýôôåêòèâíîñòè êðåìíèåâûõ ñîëíå÷- íûõ ýëåìåíòîâ ïîñðåäñòâîì íàíîïîðèñòîãî ïîêðû- òèÿ. Êëþ÷åâûå ñëîâà: ñîëíå÷íûé ýëåìåíò, ìîíîêðèñ- òàëëè÷åñêèé êðåìíèé, íàíîïîðèñòûé êðåìíèé, ýô- ôåêòèâíîñòü ïðåîáðàçîâàíèÿ Èññëåäîâàíî óëó÷øåíèå ôîòîýëåêòðè÷åñêèõ ïàðà- ìåòðîâ êðåìíèåâûõ ñîëíå÷íûõ ýëåìåíòîâ, ïîëó÷åí- íûõ ìåòîäîì òðàôàðåòíîé ïå÷àòè, çà ñ÷åò îáðàçîâà- íèÿ ñëîÿ ïîðèñòîãî êðåìíèÿ íà ôðîíòàëüíîé ïîâåðõ- íîñòè ýëåìåíòà. Ðàññìîòðåíû âîçìîæíûå ìåõàíèç- ìû, îòâåòñòâåííûå çà óëó÷øåíèå ïðîèçâîäèòåëüíî- ñòè êðåìíèåâîé ñîëíå÷íîé ÿ÷åéêè. Àçåðáàéäæàí, Áàêó, Èíñòèòóò ôèçèêè ÍÀÍÀ; Òóðöèÿ, Óíèâåðñèòåò Êîäæàåëè. ____________________________ Äæàôàðîâ Ò. Ä., Àñëàíîâ Ø. Ñ., Ðàã³ìîâ Ø. Õ., Ñàäèãîâ Ì. Ñ., Íàá³ºâà À. Ô., Àéäèí Þêñåë Ñ. Ï³äâèùåííÿ åôåêòèâíîñò³ êðåìí³ºâèõ ñîíÿ÷íèõ åëå- ìåíò³â çà äîïîìîãîþ íàíîïîðèñòîãî ïîêðèòòÿ. Êëþ÷îâ³ ñëîâà: ñîíÿ÷íèé åëåìåíò, ìîíîêðèñòàë³- ÷íèé êðåìí³é, íàíîïîðèñòîãî êðåìí³é, åôåê- òèâí³ñòü ïåðåòâîðåííÿ. Äîñë³äæåíî ïîë³ïøåííÿ ôîòîåëåêòðè÷íèõ ïàðàìåòð³â êðåìí³ºâèõ ñîíÿ÷íèõ åëåìåíò³â, îòðèìàíèõ ìåòî- äîì òðàôàðåòíîãî äðóêó, çà ðàõóíîê óòâîðåííÿ øàðó ïîðèñòîãî êðåìí³þ íà ôðîíòàëüí³é ïîâåðõí³ åëåìåíòà. Ðîçãëÿíóòî ìîæëèâ³ ìåõàí³çìè, â³äïîâ³- äàëüí³ çà ïîë³ïøåííÿ ïðîäóêòèâíîñò³ êðåìí³ºâîãî ñîíÿ÷íîãî åëåìåíòà. Àçåðáàéäæàí, Áàêó, ²íñòèòóò ô³çèêè ÍÀÍÀ; Òóðå÷÷èíà, Óí³âåðñèòåò Êîäæàåë³.

Performance improvement of silicon solar cells by nanoporous silicon coating

Institution

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