Новые книги
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Назва видання: | Технология и конструирование в электронной аппаратуре |
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irk-123456789-564002014-02-18T03:15:44Z Новые книги Библиография 2013 Article Новые книги // Технология и конструирование в электронной аппаратуре. — 2013. — № 6. — С. 13, 18, 45. — рос. 2225-5818 http://dspace.nbuv.gov.ua/handle/123456789/56400 ru Технология и конструирование в электронной аппаратуре Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Библиография Библиография |
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Библиография Библиография Новые книги Технология и конструирование в электронной аппаратуре |
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Article |
| title |
Новые книги |
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Новые книги |
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Новые книги |
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Новые книги |
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Новые книги |
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новые книги |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2013 |
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Библиография |
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http://dspace.nbuv.gov.ua/handle/123456789/56400 |
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Новые книги // Технология и конструирование в электронной аппаратуре. — 2013. — № 6. — С. 13, 18, 45. — рос. |
| series |
Технология и конструирование в электронной аппаратуре |
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2025-07-05T07:40:04Z |
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2025-07-05T07:40:04Z |
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1836791842422652928 |
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Òåõíîëîãèÿ è êîíñòðóèðîâàíèå â ýëåêòðîííîé àïïàðàòóðå, 2013, ¹ 6
13
ÑÎÂÐÅÌÅÍÍÛÅ ÝËÅÊÒÐÎÍÍÛÅ ÒÅÕÍÎËÎÃÈÈ
Advances in Materials Science Research, vol. 12, NY, Nova
Science Publishers, 2012, pp. 135-162.
7. Korotaev A.D., Moshkov V.Yu., Ovchinnikov
S.V., Pinzhin Yu.P., Savostikov V.M., Tyumentsev A.N.
Nanostructured and nanocomposite superhard coatings. Phys.
Mesomech., 2005, vol. 8, no 5-6, pp. 93-104.
8. Andrievskii R. A. [Nanomaterials: the concept and
current problems] Zhurnal rossiiskogo khimicheskogo ob-
shchestva im. D. I. Mendeleeva, 2002, vol. 46, no 5, pp.
50-56 (in Russian).
9. Andrievskii R. A. Osnovy nanostrukturnogo materialo-
vedeniya. Vozmozhnosti i problemy [Fundamentals of nano-
structured materials science. Opportunities and challenges]
Moskow, “BINOM. Laboratoriya znanii”, 2012 (in Russian).
10. Andrievskii R. A. Nanomaterials based on high-
melting carbides, nitrides and borides. Russian Chemical
Reviews, 2005, vol. 74, no 12, pp. 1061-1072. DOI:10.1070/
RC2005v074n12ABEH001202
11. Munr R. G. Material properties of titanium diboride,
Journal of Research of the National Institute of Standards
and Technology, 2000, vol. 105, no 5, pp. 709-720.
12. Itoh H., Naka S., Matsudaira T., Hamamoto H.
Preparation of TiB2 a sintered compacts by hot pressing,
Journal of Materials Science, 1990, vol. 25, pp. 533-536.
13. Park June-Ho, Lee Yong-Ho, Koh Young-Hag, Kim
Hyoun-Ee. Effect of hot-pressing temperature on densification
and mechanical properties of titanium diboride with silicon
nitride as a sintering aid. J. Am. Ceram. Soc., 2000, vol. 83,
no 6, pp. 1542-1544.
14. Andrievskii R. A., Kalinnikov G. V., Shtanskii D. V.
High-resolution transmission and scanning electron microscopy of
boride-nitride nanostructured films. Physics of the Solid State,
2000, vol. 42, iss. 4, pp. 760-766. doi: 10.1134/1.1131287
15. Pfohl C., Bulak A., Rie K.-T. Development of titanium
diboride coatings deposited by PACVD. Surface and Coatings
Technology, 2000, vol. 131, pp. 141-146.
16. Mayrhofer P. H., Mitterer C., Wen J. G. et al. Self-
organized nanocolumnar structure in superhard TiB2 thin films.
Applied Physics Letters, 2005, vol. 86, pp. 131909-(1-3).
17. Beresnev V. M., Pogrebniak A. D., Azarenkov N. A.,
Farenik V. I., Kirik G. V. Nanocrystalline and nanocomposite
coverings, structure, properties. Physical surface engineering,
2007, vol. 5, no 1–2, pp. 4-27 (in Russian).
18. Andrievskiy R. A., Glezer A. M. Strength of nano-
structures. Physics-Uspekhi, 2009, vol. 52, no 4, pp. 315-334.
DOI: 10.3367/UFNr.0179.200904a.0337
19. Boltovets N. S., Ivanov V. N., Konakova R. V. Kurakin
A. M., Milenin V. V., Soloviev E. A., Verimeychenko G. M.
Technology and experimental studies of contacts for micro-
wave diodes based on interstitial phases, Semiconductor
Physics, Quantum Electronics & Optoelectronics, 2001,
vol. 4, no 2, pp. 93-105.
20. Todorovich B., Jokich T., Rakocevich Z. Markovich
Z., Gakovich B., Nenadovich T. The effect of rapid thermal
annealing on structural and electrical properties of TiB2 thin
films, Thin Solid Films, 1997, vol. 300, no 1–2, pp. 272-277.
21. Boltovets N. S., Ivanov V. N., Konakova R. V.,
Kudrik Ya. Ya., Litvin O. S., Litvin P. M., Milenin V. V.
Interphase interactions and features of structural relaxation
in TiBx-n-GaAs (InP, GaP, 6H-SiC) contacts subjected
to active treatment. Semiconductors, 2004, vol. 38, iss. 7,
pp. 737-741. DOI: 10.1134/1.1777591
22. Ageev O. A., Belyaev A. E., Boltovets N. S.,
Ivanov V. N., Konakova R. V., Kudryk Ya. Ya., Lytvyn P.
M., Milenin V. V., Sachenko A. V. Au—TiBx—n-6H-SiC
Schottky barrier diodes: Specific features of charge transport in
rectifying and nonrectifying contacts. Semiconductors, 2009,
vol. 43, iss. 7, pp. 865-871. DOI: 10.1134/S1063782609070070
23. Boltovets N. S., Ivanov V. N., Kovtonyuk V. M.,
Rayevskaya N. S., Belyaev A. E., Bobyl A. V., Konakova
R. V., Kudryk Ya. Ya., Milenin V. V., Novitskiy S. V.,
Sheremet V. N. InP Gunn diodes with a cathode contact
injecting hot electrons. Part 1. Interactions between phases
in the cathode contacts. Tekhnologiya i konstruirovanie v
elektronnoi apparature, 2010, no 5–6, pp. 3-6 (in Russian).
24. Kudrik Ya.Ya. [Investigation of heat-resistant barrier
contacts to n-6H SiC] Trudy 4 MNTK “Mikroelektronnye pre-
obrazovateli i pribory na ikh osnove” [Proc. 4th Int. Confer.
“Microelectronic converters and devices on their basis”].
Azerbaidzhan, Baku–Sumgait, 2003, pp. 22-26. (in Russian)
25. Belyaev A. E., Boltovets N. S., Ivanov V. N., Kamalov
A. B., Kapitanchuk L. M., Kladko V. P., Konakova R. V.,
Kudryk Ya. Ya., Milenin V. V., Nasyrov M. U., Nevolin P. V.
Interphase interactions and the mechanism of current flow in
Au–TiBx–AuGe–n-GaP ohmic contacts. Semiconductors, vol. 43,
iss. 11, pp. 1428-1432. DOI: 10.1134/S1063782609110062
26. Gupta A., Wang H., Kvit A., Duscher G., Narayan J.
Effect of microstructure on diffusion of copper in TiN films.
J. Appl. Phys., 2003, vol. 93, no 9, pp. 5210-5214.
ÍÎÂÛÅ ÊÍÈÃÈ
Í
Î
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Å
Ê
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È
Ã
È
Õàíñåí Ð. Ñ. Ôàçèðîâàííûå àíòåííûå ðåøåòêè.— Ìîñêâà: Òåõíîñôåðà,
2012.
В êíèãå ïðèâåдåí âñåñòîðîííèé àíàëèз îñîбåííîñòåé ïðî-
åêòèðîâàíèÿ è èññëåдîâàíèÿ õàðàêòåðèñòèê фàзèðîâàííыõ
àíòåííыõ ðåшå òîê è âõîдÿщèõ â íèõ ñèñòåм. Оñîбîå зíàчå-
íèå ïðèдàåòñÿ ðàñ ñмîòðåíèю àëãîðèòмîâ, ïðèãîдíыõ дëÿ èñ-
ïîëьзîâàíèÿ â ПÊ. Пðåдñòàâëåíà òàêжå îбшèðíàÿ èíфîðмàцèÿ
î ðàзëèчíыõ òèïàõ àíòåííыõ óñòðîéñòâ ñ ýëåêòðîííым óïðàâ-
ëåíèåм ëóчîм è âõîдÿщèõ â íèõ фóíêцèîíàëьíыõ ñèñòåмàõ.
Êíèãà ïðåдíàзíàчåíà дëÿ íàóчíыõ ðàбîòíèêîâ è èíжåíåðîâ,
зàíèмàющèõñÿ èññëåдîâàíèÿмè è ðàзðàбîòêàмè фàзèðîâàííыõ àíòåííыõ ðåшåòîê,
à òàêжå àñïèðàíòîâ è ñòóдåíòîâ ñòàðшèõ êóðñîâ, ñïåцèàëèзèðóющèõñÿ â îбëàñòè
àíòåíí è óñòðîéñòâ СВЧ.
Òåõíîëîãèÿ è êîíñòðóèðîâàíèå â ýëåêòðîííîé àïïàðàòóðå, 2013, ¹ 6
18
ÑÂ×-ÒÅÕÍÈÊÀ
this fact can significantly affect the volume discharge calculated value, and hence the non-synchronization
parameter, for those of its values, which are characteristic of the TWT with a phase velocity jump. In this
paper, formulas has been obtained for computation of real and imaginary parts of the complex reduction
coefficient for a cylindrical electrons beam with exponential variable amplitude of variable current component
in the TWT. Influence of complex reduction coefficient on the parameters of the TWT operating in the linear
mode is estimated. It is shown that taking into account the imaginary part of the reduction coefficient for
linear operation of the TWT makes it possible to change the estimated amount of space charge 1.5 to 2 times,
which in its turn has quite a strong effect on the formation of the initial conditions of the nonlinear mode and,
subsequently, on the output characteristics of the TWT.
Keywords: complex reduction coefficient, cylindrical electron beam, variable current component, space charge,
TWT.
REFERENCES
1. N. J. Dionne. Traveling wave electron interaction
device having efficiency enhancement means. Patent USA
no 3.614.517, 1970.
2. Malivanchuk V. I., Rukin V. P. [Research TWT with
two jumps of the phase velocity]. Elektronnaya tekhnika.
Ser. 1. Elektronika SVCh, 1974, iss. 11, pp. 51—56
(in Russian).
3. Tseitlin M. B., Kats A. M. Lampa s begushchei volnoi
[Tube with a traveling wave]. Moscow, Sovetskoe Radio,
1964 (in Russian).
4. Lebedev I. V. Tekhnika i pribory SVCh. T. 2 [Microwave
equipment and Devices. Vol. 2]. Moscow, Vysshaya shkola,
1972 (in Russian).
5. Branch G. M., Mihran T. G. Plasma frequency
reduction factors in electron beams. Electron Devices,
IRE Transactions on, 1955, vol. 2, iss. 2, pp. 3—11. doi:
10.1109/T-ED.1955.14065
6. Strokovskii Ya. N., Chasnyk V. I. [Calculation of the
depression coefficients for a cylindrical electron beam with the
azimuth variation of the current density variable component]
Elektronnaya tekhnika. Ser. 1. Elektronika SVCh, 1980,
iss. 4, pp. 94—97 (in Russian).
ÍÎÂÛÅ ÊÍÈÃÈ
Í
Î
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Û
Å
Ê
Í
È
Ã
È
Гилмор-мл. À. Ñ. Лампы с бегущей волной.— Ìîñêâà: Òåõíîñôåðà, 2013.
Êíèãà îñíîâàíà íà мàòåðèàëàõ ëåêцèé è ñåмèíàðîâ ïî СВЧ-
ëàмïàм, êîòîðыå àâòîð мíîãîêðàòíî ïðåдñòàâëÿë â âåдóщèõ фèð-
мàõ è óíèâåðñèòåòàõ США. В íåé ñîñðåдîòîчåíы бàзîâыå зíàíèÿ
ïî òåîðèè è òåõíèêå íàèбîëåå âîñòðåбîâàííîãî â òåчåíèå мíîãèõ,
â òîм чèñëå è ïîñëåдíèõ дåñÿòèëåòèé, ïðèбîðà — ëàмïы ñ бå-
ãóщåé âîëíîé (ЛБВ). Êíèãà íàïèñàíà дîñòóïíым дëÿ шèðîêîãî
êðóãà чèòàòåëåé è îбðàзíым ÿзыêîм, мåòîдèчåñêè ñбàëàíñèðî-
âàíà. Шèðîêî èñïîëьзóåмыå цèòàòы èз ðàбîò èзâåñòíыõ ñïåцè-
àëèñòîâ è îбшèðíàÿ бèбëèîãðàфèÿ ñïîñîбñòâóюò бîëåå ãëóбîêî-
мó âîñïðèÿòèю èзëàãàåмîãî мàòåðèàëà. Êíèãà мîжåò быòь ïîëåзíà êàê дëÿ ïîд-
ãîòîâêè ñòóдåíòîâ ñòàðшèõ êóðñîâ è àñïèðàíòîâ âóзîâ, òàê è ñïåцèàëèñòîâ, зàíÿ-
òыõ ðàзðàбîòêîé è ïðèмåíåíèåм ЛБВ â ðàзëèчíыõ îбëàñòÿõ ðàдèîýëåêòðîíèêè.
Í
Î
Â
Û
Å
Ê
Í
È
Ã
È
Íанотехнологии в электронике. Âып. 2 / Под ред. Ю. À. ×аплыгина.—
Ìîñêâà: Òåõíîñôåðà, 2013.
Нàñòîÿщåå èздàíèå — âòîðîé âыïóñê êíèãè, âышåдшåé íåñêîëь-
êî ëåò íàзàд. Êàждóю èз чàñòåé êíèãè ïðåдñòàâëÿåò ãðóïïà àâ-
òîðîâ, àêòèâíî ðàзâèâàющèõ дàííîå íàïðàâëåíèå â Нàцèîíàëь-
íîм èññëåдîâàòåëьñêîм óíèâåðñèòåòå «МИЭÒ». Êîëëåêòèâ àâòî-
ðîâ ñòàðàëñÿ îñóщåñòâèòь чàñòèчíóю ïðååмñòâåííîñòь мàòåðèà-
ëà, ñîдåðжàщåãîñÿ â ïåðâîм âыïóñêå, îдíàêî ñòðóêòóðà êíèãè
ñóщåñòâåííî èзмåíèëàñь: ãðóïïèðîâêà ñòàòåé ïî óñëîâíым ðàз-
дåëàм (òåîðåòèêî-ýêñïåðèмåíòàëьíыå ðàбîòы, мåòîды èññëåдî-
âàíèé, òåõíîëîãèè, ïðèбîðы è óñòðîéñòâà) ïðåдñòàâëÿåòñÿ бîëåå ïðàâèëьíîé ñ
òîчêè зðåíèÿ ïîíèмàíèÿ îбщåãî íàïðàâëåíèÿ ðàбîò â МИЭÒ. Êàждàÿ èз ðàбîò
ïðåдñòàâëÿåò ñîбîé зàêîíчåííыé íàóчíыé òðóд îбзîðíîãî èëè îбîбщàющåãî õà-
ðàêòåðà, ëèбî ÿâëÿåòñÿ чàñòью îðèãèíàëьíыõ èññëåдîâàíèé, ïîëóчåííыõ зà ïî-
ñëåдíèå 3—5 ëåò.
Òåõíîëîãèÿ è êîíñòðóèðîâàíèå â ýëåêòðîííîé àïïàðàòóðå, 2013, ¹ 6
45
ÒÅÕÍÎËÎÃÈЧÅÑÊÈÅ ÏÐÎÖÅÑÑÛ È ÎÁÎÐÓÄÎÂÀÍÈÅ
Розроблено технологію вирощування двосторонніх високовольтних кремнієвих p—i—n-структур мето-
дом рідиннофазної епітаксії в єдиному технологічному процесі. Електрофізичні параметри отриманих
структур дозволяють виготовляти на їх основі високовольтні діоди.
Ключові слова: епітаксійний шар, рідиннофазова епітаксія, рідкоземельний елемент, легування.
N. M. VAKIV1, S. I. KRUKOVSKY1, V. R. TYMCHYSHYN1,2, А. P. VAS’KIV3
Ukraine, Lviv, 1SPE “Karat”, 2Lviv Polytechnic National University,
3Ivan Franko Lviv National University
E-mail: carat207@i.ua
OBTAINING OF BILATERAL HIGH VOLTAGE EPITAXIAL
p—i—n SI STRUCTURES BY LPE METHOD
Silicon p—i—n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy
(LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach
is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their parameters
significantly deteriorate as a result of prolonged heat treatment of active high-resistivity layer. Besides,
when using diffusion method, it is impossible to provide good reproducibility of the process. In this paper
a technique of growing bilateral high-voltage silicon p—i—n-structures by LPE in a single process is
proposed. The authors have obtained the optimum compounds of silicon-undersaturated molten solutions
for highly doped (5•1018 cm–3) contact layers: 0.4—0.8 at. % aluminum in gallium melt for growing p-Si-
layers and 0.03—0.15 at. % ytterbium in tin melt for n-Si-layers. Parameters of such structures provide for
manufacturing of high-voltage diodes on their basis. Such diodes can be used in navigational equipment,
communication systems for household and special purposes, on-board power supply systems, radar systems,
medical equipment, etc.
Key words: epitaxial layer, liquid-phase epitaxy, rare-earth element, dopping.
REFERENCES
1. Kharlamov R.V. Razrabotka tekhnologii proizvodstva
kremnievykh epitaksial'nykh struktur dlya silovykh priborov.
Diss. kand. tekhn. nauk [Development of production technol-
ogy of silicon epitaxial structures for power devices. Ph.D.
tech. diss.] Moskow, 2000. 166 p. (in Russian)
2. Skorobogatov L.A., Zubritskiy S.M., Petrov A.L.,
Semenov A.L. Tekhnologii materialov dlya mikro- i nanoelek-
troniki [Materials technology for micro- and nanoelectronics].
Irkutsk State University, 2009. 83 p. (in Russian)
3. Ufimtsev V.B., Achkurin R.Kh. Fiziko-khimicheskie
osnovy zhidkofaznoi epitaksii [Physico-chemical principles of
liquid-phase epitaxy]. Moskow, Metallurgiya, 1983. (in Russian)
4. Gorelenok A. T., Kamanin A. V., Shmidt N. M. Rare-
earth elements in the technology of III–V compounds and
devices based on these compounds. Semiconductors, 2003,
vol. 37, iss. 8, pp. 894-914. DOI: 10.1134/1.1601656
5. Vakiv M.M., Krukovsky S.I., Tymchyshyn V.R. [Low-
temperature liquid-phase epitaxy of p-Si layers in composition
of p-i-n Si high-voltage structures] Visnik Natsional'nogo
universitetu “L'vivs'ka Politekhnika”, Ser. “Elektronika“,
2011, no. 708, pp. 50-54. (in Ukraine)
6. Korolev M.A., Krasyukov A.Yu., Polomoshnov S.A.
Sovremennye problemy tekhnologii nanoelektroniki [Modern
problems of nanoelectronics technology] Moskow, MIET,
2011. 100 p. (in Russian)
7. Vakiv M.M., Krukovsky S.I., Tymchyshyn V.R.
Grafitova kaseta dlya otrimannya dvostoronnikh epitaksiinikh
struktur [Graphite cassette for obtaining bilateral epitaxial
structures]. Pat. of Ukraine no. 73670, 2012. (in Ukraine)
ÍÎÂÛÅ ÊÍÈÃÈ
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Ê
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È
Ã
È
Áерлин Å. Â., Ñейдман Ë. À. Ïолучение тонких пленок реактивным маг-
нетронным распылением.— Ìîñêâà: Òåõíîñôåðà, 2014.
Êíèãà ïðåдñòàâëÿåò ñîбîé ïîдðîбíîå ñïðàâîчíîå ðóêîâîдñòâî ïî фèзèчåñêèм îñíî-
âàм, òåõíîëîãèчåñêèм îñîбåííîñòÿм è ïðàêòèчåñêîмó ïðèмåíåíèю ïðîцåññà ðåàê-
òèâíîãî мàãíåòðîííîãî íàíåñåíèÿ òîíêèõ ïëåíîê ñëîжíîãî ñîñòàâà. Пîдðîбíî îïè-
ñàíы фèзèчåñêèå ïðîцåññы, ïðîòåêàющèå âî âðåмÿ ðåàêòèâíîãî мàãíåòðîííîãî íà-
íåñåíèÿ, òåõíîëîãèчåñêèå îñîбåííîñòè мàãíåòðîííîãî íàíåñåíèÿ. Оñîбîå âíèмàíèå
óдåëåíî ñïîñîбàм óïðàâëåíèÿ ïðîцåññàмè íàíåñåíèÿ ïëåíîê, îбåñïåчèâàющèм ñòà-
бèëьíîñòь è âîñïðîèзâîдèмîñòь êàê ñàмîãî ïðîцåññà, òàê è ñâîéñòâ ïîëóчàåмыõ ïëå-
íîê. Рàññмîòðåíы мîдèфèêàцèè ïðîцåññà íàíåñåíèÿ, ðàзëèчàющèåñÿ èñïîëьзóåмы-
мè èñòîчíèêàмè ïèòàíèÿ: ïîñòîÿííîãî òîêà, ñðåдíåчàñòîòíыõ èмïóëьñîâ, èмïóëьñîâ
бîëьшîé мîщíîñòè è âыñîêîчàñòîòíыå. Äàíы ïðàêòèчåñêèå ðåêîмåíдàцèè ïî îñâî-
åíèю èзâåñòíыõ è ðàзðàбîòêå íîâыõ ïðîцåññîâ ïîëóчåíèÿ ïëåíîê ñëîжíîãî ñîñòàâà
мåòîдîм ðåàêòèâíîãî мàãíåòðîííîãî ðàñïыëåíèÿ.
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