Defects in high temperature and high pressure processed Si:N revealed by deuterium plasma treatment
Deuterium is accumulated by defects in nitrogen-implanted silicon (Si:N). This effect is investigated for Si:N processed at HT ≤ 1400 K, also under enhanced hydrostatic pressure, HP ≤ 1.1 GPa. Si:N was prepared from Czochralski grown silicon by N₂⁺ implantation at E = 140 keV with nitrogen doses, DN...
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| Date: | 2010 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
2010
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| Series: | Физика и техника высоких давлений |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/69328 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Defects in high temperature and high pressure processed Si:N revealed by deuterium plasma treatment / A. Misiuk, A. Barcz, A. Ulyashin, M. Prujszczyk, J. Bak-Misiuk, P. Formanek // Физика и техника высоких давлений. — 2010. — Т. 20, № 4. — С. 53-59. — Бібліогр.: 4 назв. — рос. |