Long-term relaxation of photoconductivity in cadmium doped Gd₂S₃ films
In first time it is experimentally investigated some regularities of long-term relaxation of photoconductivity of gadolinium one-and-halp sulfides thin films doped by cadmium atoms. Was calculated maximum of recombination barrier and found the location of trapping levels in the gap.
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| Datum: | 2011 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Науковий фізико-технологічний центр МОН та НАН України
2011
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| Schriftenreihe: | Физическая инженерия поверхности |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/76139 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Long-term relaxation of photoconductivity in cadmium doped Gd₂S₃ films / Z.U. Jabua, A.V. Gigineishvili, I.G. Tabatadze, I.L. Kupreishvili // Физическая инженерия поверхности. — 2011. — Т. 9, № 1. — С. 44–47. — Бібліогр.: 10 назв. — англ. |