Simulation of the front and rear side illumination of the CdS/CIGS thin film solar cell
In this study the effect of the rear side illumination on the CdS/CIGS thin film solar cell has been studied. The simulation program SCAPS-1D was used in this study. This program was developed for the simulation properties of the CdS/CdTe and CdS/CIGS thin film solar cells. At the rear side illumina...
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| Datum: | 2011 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Науковий фізико-технологічний центр МОН та НАН України
2011
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| Schriftenreihe: | Физическая инженерия поверхности |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/77002 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Simulation of the front and rear side illumination of the CdS/CIGS thin film solar cell / A.D. Pogrebnyak, L.S. Rasheed, A.K. Allohaibee, A.K. Muhammed // Физическая инженерия поверхности. — 2011. — Т. 9, № 4. — С. 390–394. — Бібліогр.: 6 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | In this study the effect of the rear side illumination on the CdS/CIGS thin film solar cell has been studied. The simulation program SCAPS-1D was used in this study. This program was developed for the simulation properties of the CdS/CdTe and CdS/CIGS thin film solar cells. At the rear side illumination the efficiency of the cell decreased as the thickness of the CIGS absorber layer increased. This was because the light is absorbed far from the junction and near the high recombination back contact region. So that the generated electron-hole pairs are recombined before they reach the junction to separate. The losses in the generated electron-hole pairs increase as the thickness of the CIGS absorber layer increase and this is clearly shown in the variation of the quantum efficiency with the absorber thickness at the rear side illumination. |
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