Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal
We present the results of the polarization and intensity measurements versus photon energy Eg=5-35 MeV for the photon beam produced by the electrons with the energies 1.2 and 1.5 GeV moving in the silicon crystal 500 and 290 mm thick along the (110) plane. The comparison with results of another rese...
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Date: | 2001 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2001
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Series: | Вопросы атомной науки и техники |
Subjects: | |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/78448 |
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Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Cite this: | Linear polarization of photons produced by the electrons moving along the crystallographic plane in a silicon crystal / V.V. Denyak, V.M. Khvastunov, V.P. Likhachev, S.A. Paschuk, H.R. Schelin // Вопросы атомной науки и техники. — 2001. — № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ. |