Interstrip resistance of a semiconductor microstrip detector
In this work the interelement (interstrip) resistance of the microstrip detector is studied. A few detectors with a different construction are investigated. The dependence of the interstrip resistance on the dose of detector irradiation with electrons is obtained. The possibility of application inte...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2001
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| Назва видання: | Вопросы атомной науки и техники |
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| Цитувати: | Interstrip resistance of a semiconductor microstrip detector / V. Kulibaba, N. Maslov, S. Potin, A. Starodubtsev // Вопросы атомной науки и техники. — 2001. — № 5. — С. 180-182. — Бібліогр.: 5 назв. — англ. |
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irk-123456789-790002015-03-25T03:02:44Z Interstrip resistance of a semiconductor microstrip detector Kulibaba, V. Maslov, N. Potin, S. Starodubtsev, A. In this work the interelement (interstrip) resistance of the microstrip detector is studied. A few detectors with a different construction are investigated. The dependence of the interstrip resistance on the dose of detector irradiation with electrons is obtained. The possibility of application interstrip resistance measurement for the determination of the good strip yield is shown. 2001 Article Interstrip resistance of a semiconductor microstrip detector / V. Kulibaba, N. Maslov, S. Potin, A. Starodubtsev // Вопросы атомной науки и техники. — 2001. — № 5. — С. 180-182. — Бібліогр.: 5 назв. — англ. 1562-6016 PACS number: 29.40.Wk. http://dspace.nbuv.gov.ua/handle/123456789/79000 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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In this work the interelement (interstrip) resistance of the microstrip detector is studied. A few detectors with a different construction are investigated. The dependence of the interstrip resistance on the dose of detector irradiation with electrons is obtained. The possibility of application interstrip resistance measurement for the determination of the good strip yield is shown. |
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Article |
| author |
Kulibaba, V. Maslov, N. Potin, S. Starodubtsev, A. |
| spellingShingle |
Kulibaba, V. Maslov, N. Potin, S. Starodubtsev, A. Interstrip resistance of a semiconductor microstrip detector Вопросы атомной науки и техники |
| author_facet |
Kulibaba, V. Maslov, N. Potin, S. Starodubtsev, A. |
| author_sort |
Kulibaba, V. |
| title |
Interstrip resistance of a semiconductor microstrip detector |
| title_short |
Interstrip resistance of a semiconductor microstrip detector |
| title_full |
Interstrip resistance of a semiconductor microstrip detector |
| title_fullStr |
Interstrip resistance of a semiconductor microstrip detector |
| title_full_unstemmed |
Interstrip resistance of a semiconductor microstrip detector |
| title_sort |
interstrip resistance of a semiconductor microstrip detector |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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2001 |
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http://dspace.nbuv.gov.ua/handle/123456789/79000 |
| citation_txt |
Interstrip resistance of a semiconductor microstrip detector / V. Kulibaba, N. Maslov, S. Potin, A. Starodubtsev // Вопросы атомной науки и техники. — 2001. — № 5. — С. 180-182. — Бібліогр.: 5 назв. — англ. |
| series |
Вопросы атомной науки и техники |
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AT kulibabav interstripresistanceofasemiconductormicrostripdetector AT maslovn interstripresistanceofasemiconductormicrostripdetector AT potins interstripresistanceofasemiconductormicrostripdetector AT starodubtseva interstripresistanceofasemiconductormicrostripdetector |
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2025-07-06T03:07:51Z |
| last_indexed |
2025-07-06T03:07:51Z |
| _version_ |
1836865313012973568 |
| fulltext |
INTERSTRIP RESISTANCE OF A SEMICONDUCTOR
MICROSTRIP DETECTOR
V. Kulibaba, N. Maslov, S. Potin, A. Starodubtsev
NSC KIPT, Kharkov, Ukraine
In this work the interelement (interstrip) resistance of the microstrip detector is studied. A few detectors with a dif-
ferent construction are investigated. The dependence of the interstrip resistance on the dose of detector irradiation
with electrons is obtained. The possibility of application interstrip resistance measurement for the determination of
the good strip yield is shown.
PACS number: 29.40.Wk.
1 INTRODUCTION
Interelement (interstrip) resistance is one of the most
important parameters characterizing the quality of a mi-
crostrip as well as other multielement semiconductor
detectors. The value of the interstrip resistance along
with the interstrip capacitance determines a number of
strips over which the charge produced by an ionizing
particle is distributed (cluster) and, consequently, the
spatial resolution of the detector [1]. One can conclude
from the value of the interstrip resistance and its varia-
tion while a detector is affected by different factors on
the state of its surface, defect content in silicon etc.
Apart from this, the interstrip resistance at the ohmic
side of the detector shows the quality of performance of
the p+-stop structure [2]. Measuring the interstrip resis-
tance enables one to determine such detector parameters
as depletion voltage, n+-strip separation voltage, as well
as a large number of technological defects these being
the short-circuited strips in the simplest case.
2 METHOD OF MEASUREMENT
The problem of determining the interstrip resistance
is not a trivial one because the measurements must be
performed at the voltage of total depletion of the detec-
tor. While measuring the interstrip resistance one should
provide for minimum distortions of electrostatic fields
within the interstrip volume of the detector being under
the voltage of total depletion. Usually the value of the
interstrip resistance falls into the range from hundreds
M Ω to tens G Ω depending on the detector design. In
order to determine the interstrip resistance a method is
used conventionally that permits to determine the inter-
strip resistance from strip leakage currents [3]. The
essence of the method is in that first one measures the
leakage current of one strip according to the scheme of
fig. 1 a) at the voltage values U exceeding those of total
depletion. One determines the voltage range within
which the leakage current experiences small variation.
Then an additional supply unit V is switched into the
scheme such that V<<U’ and U’+V=U and again leak-
age currents are measured according to the scheme pre-
sented in Fig. 1b). Then one plots the graphs from these
measurements (see Fig. 3 and Fig. 4), from which the
interstrip resistance is determined as a tangent of the in-
clination angle of the straight line.
It should be noted that these measurements furnish
the accurate value of the interstrip resistance only in the
absence of the bias resistor on the strip under measure-
ment. In the presence of all resistors whose resistance
does not exceed several tens M Ω , we will determine
the total resistance of the circuit made up by two bias
resistors and one interstrip resistors switched in parallel.
Therefore for physical studies of the detector it is neces-
sary to develop special microstrip test structures.
3 STUDING THE INTERSTRIP RESIS-
TANCE
The studies were performed on four types of test
structures. Test microstrip structures were manufactured
simultaneously with the main detector and they differed
from it only in the diminished number of strips. Test mi-
crostrip structures possess 64 strips instead of 768 for
the main detector. Other parameters of the test mi-
crostrip structures are the same as the parameters of the
main detector: thickness of 300 μm, strip length of
40 mm, step of 100 μm.
а)
b)
Fig. 1. Schemes employed for the determination of
the interstrip resistance: а) measuring the strip
leakage current; b) measuring the sum of currents
(leakage current and interstrip currents).
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2001. №5.
Серия: Ядерно-физические исследования (39), с. 180-182.
180
6
Fig. 2. Corner of multichannel microstrip detectors (a- p+ detector, b- n+ detector): 1 - contact pad of
integrated capacitors, 2 - polysilicon resistors, 3 - basing pad of microstrip active elements,
4 - p+-guard ring, 5 - p+-stop structure, 6 - contact pads of microstrip active zone.
Fig. 3. Interstrip currents of the test 64-strip P-detector.
Fig. 4. Interstrip currents of the test 64-strip N-detector
To ensure the accurate measurement of the interstrip
resistance the test structures 1 and 2 are made without
bias resistors, and the structures 3 and 4 lack 3 resistors
each. Structures 1 and 2 are the test structures of one-
sided р+ microstrip detector. The surface of silicon of
test structure 1 is covered with a silicon oxide layer, be-
sides, structure 2 has an additional layer of Si3N4 insula-
tion. Structure 3 is a test structure of р+ side, and struc-
ture 4 is a test structure of the n+ side of a double-sided
microstrip detector. Structures 3 and 4 possess single-
layered SiO2 insulation. Fig. 2 shows the view of the 3
and 4 test structures.
The studies were performed to reveal the effect of
design peculiarities of detectors on the interstrip resis-
tance. The behavior of the interstrip resistance under ir-
radiation of detectors was also performed. To this end
the test detectors were irradiated with a beam of
20 MeV electrons. Detectors 1 and 2 were irradiated in
4 stages up to the dose of 2.1 Mrad. Detectors 3 and 4
were irradiated once up to the dose of 200 krad.
Fig. 3 and Fig. 4 show the interstrip resistance of de-
tectors 3 and 4 before and after irradiation. Consider the
difference of the interstrip resistance for p+- (detector 3)
and n+- (detector 4) sides. As is seen from the figures,
the resistance of detector 3 (p+-side) is higher than the
resistance of the detector 4 (n+-side). This is attributed
to the design peculiarities of the n+-side. Owing to the
presence of the positive static charge at the Si-SiO2 in-
terface, a layer of electrons is formed under SiO2 at the
surface of the n-silicon. At the p-side these electrons are
pushed away by the depletion regions and disappear
completely with the growth of the depletion region size.
At the n+-side this layer simply short-circuits n+-strips
between themselves. To overcome this difficulty the
n+-strips are separated with р+-regions called р+-stop
structures [5]. In this case the interstrip resistance is de-
termined by the width of the р+-stop structures and their
design, whereas at the p+-side it is determined by the
distance between adjacent strips. As the width of the р+-
stop layer is less than the distance between the strips,
the interstrip resistance at the n+-side is less than that at
the p+-side.
Fig. 5 depicts the dependence of the interstrip resis-
tance on the irradiation dose for detectors 1 and 2. As is
seen from the figure, the interstrip resistance of detec-
tors 1 (squares) and 2 (crosses) differed strongly.
The lesser interstrip resistance of detector 2 is at-
tributed to the additional Si3N4 insulating layer increas-
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2001. №5.
Серия: Ядерно-физические исследования (39), с. 180-182.
181
ing the contribution of the detector surface into the total
leakage current and into interstrip currents [4]. This is
probably associated with the existence of the genera-
tion-recombination centers at the boundary dividing
SiO2 and Si3N4. Under irradiation the difference in the
interstrip resistance values for the detectors with single-
layer and double-layer insulation disappears practically.
In order to explain the dose dependence of the interstrip
resistance, let us consider the variation in leakage cur-
rents under irradiation of detectors with single-layer and
double-layer insulation.
Fig. 5. Interstrip resistance of 64-strip detectors
with (2) and without (1) Si3N4 against the irradiation
dose by 20 MeV electrons.
Fig. 6. Leakage currents of the detectors with Si3N4
(triangles) and without Si3N4 (squares).
Fig. 6 shows the variation of leakage currents under
irradiation of detectors with an additional Si3N4 insula-
tion layer and without it. The difference between the
leakage currents for the detectors with an additional
Si3N4 insulation layer and without it before irradiation
was about of 25 nA. It is seen from the figure that the
difference between the leakage currents is constant
within the total range of irradiation doses. Under irradi-
ation the leakage currents of the detectors with the addi-
tional Si3N4 insulation layer and without it are increased
due to the increase of the volume component of the
leakage current. This is attributed to the increase of the
concentration of generation-recombination centers in
the silicon volume. The density of surface generation-
recombination centers does not change within the dose
range under study. Therefore the difference between the
leakage currents for the detectors with an additional
Si3N4 insulation layer and without it is constant.
With large irradiation doses the total leakage current
of the detector and, consequently, the interstrip resist-
ance is determined by the increased volume generation-
recombination current [5]. Therefore with the dose in-
creasing the interstrip resistance values of both detectors
become practically equal.
Apart from the physical studies of the interstrip re-
sistance that require obtaining the accurate value of the
resistance, other measurements are possible. Specifical-
ly, in the process of technological measurement of the
good strip yield one employs measuring the interstrip
resistance. As these measurements are made not on test
structures but on main detectors, all strips possess the
bias resistors. As was already mentioned above, in this
case we measure the resistance of the circuit made up of
two bias resistors and a single interstrip resistance. As
the resistance of the bias resistor is much less than the
interstrip one, the resulting resistance is equal approxi-
mately to the double value of the bias resistor (some
tens M Ω ). Usually in the presence of a defect between
the strips the value of the resulting resistance doe not
exceed some hundreds k Ω and it may be used for dis-
covering defect strips.
4 CONCLUSIONS
The interstrip resistance is one of the most important
parameters indicating the quality of a microstrip detec-
tor. The value of the interstrip resistance may give the
information on the spatial resolution of a detector.
Studying the behavior of the interstrip resistance one
can determine such electrophysical characteristics of the
detector as the depletion voltage, the n+-strip separation
voltage and the quality of the performance of the p+-
stop structure. While determining the yield of good
strips the measurement of the interstrip resistance en-
ables one to reveal technological defects of a detector.
REFERENCES
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Серия: Ядерно-физические исследования (39), с. 180-182.
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