Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes
Combined detectors of charged particles are described based on zinc selenide (ZnSe(Te)) crystals, silicon photodiodes and charge-sensitive amplifiers. ZnSe(Te) scintillators are characterized by high alpha to beta ratio (~1.0), good scintillation efficiency (up to 22%), and high radiation stability...
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| Дата: | 2001 |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2001
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| Цитувати: | Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes / V.D. Ryzhikov, L.P. Gal’chinetskii, N.G. Starzhinskiy, E.A. Danshin, K.A. Katrunov, V.V. Chernikov // Вопросы атомной науки и техники. — 2001. — № 5. — С. 174-176. — Бібліогр.: 3 назв. — англ. |
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irk-123456789-790132015-03-25T03:02:38Z Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes Ryzhikov, V.D. Gal’chinetskii, L.P. Starzhinskiy, N.G. Danshin, E.A. Katrunov, K.A. Chernikov, V.V. Combined detectors of charged particles are described based on zinc selenide (ZnSe(Te)) crystals, silicon photodiodes and charge-sensitive amplifiers. ZnSe(Te) scintillators are characterized by high alpha to beta ratio (~1.0), good scintillation efficiency (up to 22%), and high radiation stability (up to 100 Mrad), together with good spectral matching with silicon PIN photodiodes. The signals coming from the photodiode in the two modes (photoreceiver and semiconductor detector) differ in the amplitude values and pulse duration, which opens new possibilities for development and application of such combined detectors. 2001 Article Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes / V.D. Ryzhikov, L.P. Gal’chinetskii, N.G. Starzhinskiy, E.A. Danshin, K.A. Katrunov, V.V. Chernikov // Вопросы атомной науки и техники. — 2001. — № 5. — С. 174-176. — Бібліогр.: 3 назв. — англ. 1562-6016 PACS number: 29.27.Fa http://dspace.nbuv.gov.ua/handle/123456789/79013 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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Combined detectors of charged particles are described based on zinc selenide (ZnSe(Te)) crystals, silicon photodiodes and charge-sensitive amplifiers. ZnSe(Te) scintillators are characterized by high alpha to beta ratio (~1.0), good scintillation efficiency (up to 22%), and high radiation stability (up to 100 Mrad), together with good spectral matching with silicon PIN photodiodes. The signals coming from the photodiode in the two modes (photoreceiver and semiconductor detector) differ in the amplitude values and pulse duration, which opens new possibilities for development and application of such combined detectors. |
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Article |
| author |
Ryzhikov, V.D. Gal’chinetskii, L.P. Starzhinskiy, N.G. Danshin, E.A. Katrunov, K.A. Chernikov, V.V. |
| spellingShingle |
Ryzhikov, V.D. Gal’chinetskii, L.P. Starzhinskiy, N.G. Danshin, E.A. Katrunov, K.A. Chernikov, V.V. Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes Вопросы атомной науки и техники |
| author_facet |
Ryzhikov, V.D. Gal’chinetskii, L.P. Starzhinskiy, N.G. Danshin, E.A. Katrunov, K.A. Chernikov, V.V. |
| author_sort |
Ryzhikov, V.D. |
| title |
Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes |
| title_short |
Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes |
| title_full |
Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes |
| title_fullStr |
Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes |
| title_full_unstemmed |
Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes |
| title_sort |
combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/79013 |
| citation_txt |
Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes / V.D. Ryzhikov, L.P. Gal’chinetskii, N.G. Starzhinskiy, E.A. Danshin, K.A. Katrunov, V.V. Chernikov // Вопросы атомной науки и техники. — 2001. — № 5. — С. 174-176. — Бібліогр.: 3 назв. — англ. |
| series |
Вопросы атомной науки и техники |
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| fulltext |
COMBINED DETECTORS OF CHARGED PARTICLES BASED ON
ZINC SELENIDE SCINTILLATORS AND SILICON PHOTODIODES
V.D. Ryzhikov, L.P. Gal’chinetskii, N.G. Starzhinskiy, E.A. Danshin,
K.A. Katrunov, V.V. Chernikov
STC for Radiation Instruments
Concern “Institute for Single Crystals” of the National Academy of sciences of Ukraine
60 Lenin Ave., 61001, Kharkov, Ukraine
e-mail: stcri@isc.kharkov.com
Combined detectors of charged particles are described based on zinc selenide (ZnSe(Te)) crystals, silicon photodi-
odes and charge-sensitive amplifiers. ZnSe(Te) scintillators are characterized by high alpha to beta ratio (~1.0),
good scintillation efficiency (up to 22%), and high radiation stability (up to 100 Mrad), together with good spectral
matching with silicon PIN photodiodes. The signals coming from the photodiode in the two modes (photoreceiver
and semiconductor detector) differ in the amplitude values and pulse duration, which opens new possibilities for de-
velopment and application of such combined detectors.
PACS number: 29.27.Fa
1 INTRODUCTION
Among the most efficient methods used for detec-
tion and identification of charged particles and products
of nuclear reactions occurring on target nuclei in mixed
fields in reactors and accelerators, very promising is the
use of combined detectors (CD) based on inorganic
scintillators and silicon photodiodes (PD). Such solid-
state combined detectors have acquired a trademark
SELDI (ScintiELectronic Detectors of Ionizing radia-
tion), which is commonly used in CIS countries. Their
Western analogs are generally known as Siswich [1]. In
this paper, a number of variants of such detectors are
described, which are used for separate detection of neu-
trons and gamma-radiation in mixed fields, detection of
low- and high-energy gamma-radiation, as well as inter-
nal conversion electrons together with the accompany-
ing gamma-radiation. In this paper, we present for the
first time a new SELDI type CD for separate detection
of light and heavy charged particles in the mixed fields.
2 EXPERIMENTAL PROCEDURES
For the use as part of CD, we have chosen ZnSe(Te)
crystals grown as described earlier [2]. From the single
crystals, plates were cut, of dimensions 10x10 mm and
thickness 0.8-1.0 mm. The output windows of the plates
(facing the photosensitive surface of PD) were made
opaque, and the input ones (facing the charged particle
flux) were polished. The plates were packed in contain-
ers made of Teflon with collimator windows on the in-
put windows for transmission of the incoming charged
particles. In measurements with internal conversion
electrons (ICE), the distance between the radiation
source and the collimator was not less than 20 mm,
while for detection of alpha-particles the sources were
located just upon the collimator. The measurements
were carried out at room temperature using an immer-
sion contact, using Vaseline oil as an immersion sub-
stance. To protect Si-PIN-PD from the low-energy gam-
ma- and X-ray radiation, light transducers made of inor-
ganic crystals were occasionally used.
Comparative characteristics of ZnSe(Te) and CsI(Tl)
are given in Table 1.
Table 1. Characteristics of scintillators produced by Concern “Institute for Single Crystals”
Cristal λmax, nm τ, µs α, cm-1 Zeff. S, rel.un. Tmax, К
ZnSe(Te) 600-620
630-640
2-20
>20 0,05-0,15 33 100
170 400-450
CsI(Tl) 550 0,63-1 > 0.05 54 100 350-400
Designations: λmax – maximum position in the radioluminesce spectra, τ - decay time, α - scintillation light absorp-
tion coefficient, Zeff – effective atomic number, S – relative light output, Tmax – maximum operation temperature.
Measurements of CD spectrometric characteristics
were carried out using ICE sources 109Cd, 137Cs and
207Bi, as well as alpha-sources 239Pu, 241Am and 226Ra and
X-ray and gamma-quanta sources 55Fe, 241Am, 57Co,
137Cs, 22Na at working temperature of 294 K. As pho-
toreceivers, we used PD obtained from Hamamatsu
(S3590-01) and “Porog” type PD from NCB Ritm,
Chernovtsy, Ukraine. Comparative characteristics of the
PD used are presented in Table 2.
Table 2. Parameters of Si-PIN-photodiodes
Parameters S3590-01 «Porog» NPO
«BІТ»
Light sensetive
area, mm2 10х10 10х10 ∅25
Dark current, nA 1,5 1,6
Bias voltage, V 30 30 50
Capacitance, pF 70 67 220
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2001. №5.
Серия: Ядерно-физические исследования (39), с. 174-176.
174
Sensitivity for λ
=540 nm, A/W 0,31 0,26 0,32
The spectral sensitivity maximum of Si-PIN-PD is in
the region of 800-900 nm, ensuring 70 % matching with
the spectral characteristics of ZnSe(Te) crystal radiolu-
minescence. Very high requirements were put to all
links of the spectrometric circuit chain, especially to the
charge-sensitive pre-amplifier (CSPA) comprising a
charge-sensitive section with a field transistor at the in-
put and elements of the detector power supply. Our ex-
periments have shown that the lowest noise level can be
obtained with KP341A field transistor (the calculated
intrinsic noise level is < 400 electrons at Si-PIN-PD ca-
pacitance of 70 pF. Signal ratio at the PD output was
about 1:10, both in the photoreceiver mode and in the
semiconductor detector mode.
After the pre-amplifier, additional amplification and
signal shaping was ensured by an active filter-amplifier
of 1101 type, with input shaping times up to 40 μs.
Scintillation characteristics of ZnSe(Te) single crystals
were studied at shaping time τ1 = 15 μs, and this value
was put as τ2 = 0.1 μs for Si-PIN-PD used as a spectro-
metric detector.
Spectrometric studies were carried out using a multi-
channel analyzer based on a Notebook Pentium PC in
combination with an original ADC (developed at STC
RI in the PCMCIA standard). The energy consumption
was low, with a power supply of +5 V effectuated from
the PC cable. This complex of developments allowed
the spectrometer to be small-sized.
3 RESULTS AND DISCUSSION
Pulse amplitude spectra recorded by scintielectronic
detectors using the studied crystals and Si-PIN-PD were
measured in the amplitude scale of gamma-quanta. The
noise level of the semiconductor Si-PIN-PD detector
(SCD) allowed to clearly detect KX-quanta of 55Fe (see
Fig. 1). Analysis of these spectra and calculations of the
noise level for PD-CSPA system show that the intrinsic
noise level of the system is 420 electrons.
C
ou
nt
in
g
ra
te
,
R
.U
.
Channel number
1000
2000
3000
4000
5000
6000
7000
8000
0 50 100 150 200
55Fe
Fe Kβ1β2
(6.490 keV)
number)
Fe Kα1
(5.899 keV)
R=42 %
Fig. 1. Spectrum of 55Fe KX-quanta obtained using a
semiconductor detector based on S3590 type
Si-PIN-PD.
Fig. 2 shows the amplitude spectrum of 226Ra alpha-
particles obtained using Si-PIN SCD with the input win-
dow of 25 mm diameter. The resolution at alpha-line
with Eα = 7.687 MeV was Rα = 1.7%.
C
ou
nt
in
g
ra
te
,
R.
U
.
100
200
300
400
0 200 400 600 800
Ra226
88
4.602
Ra226
88
4.785
Po210
84
5.297
Rn222
86
5.490
Po218
84
6.003
Po214
84
7.687
R=1.7 %
226Ra
Channel number
Fig. 2. Spectrum of 226Ra alpha-particles obtained using
a NPO «BIT» semiconductor detector of Si-PIN-PD
type. Figures at the total absorption peacs denote the
energy of alpha particles in MeV.
Spectra due to 109Cd, 137Cs and 207Bi ICE obtained us-
ing a ZnSe(Te) based detector of 9x9x1 mm3 size to-
gether with an S3590 Si-PIN-PD are shown in Fig. 3.
Channel number
C
ou
nt
in
g
ra
te
, R
.U
.
500
1000
1500
0 100 200 300
207Bi
100
200
0 100 200 300
200
400
600
800
0 100 200 300 400 500 600
109Cd
EL=84.68 keV
137Cs
EК=62.52 keV
EK=624 keV
EL=645 keV
Еγ 2=1063keV
ЕL=1048keV
Еγ 1=569.7keV
EК=976keV
Re=3,7%
ЕK=481.1 keV
ЕL=554.4 keV
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2001. №5.
Серия: Ядерно-физические исследования (39), с. 174-176.
175
Fig. 3. Spectra of 109Cd (Еγ=85,03 кэВ), 137Cs (Еγ
=662 keV), 207Bi (Еγ1=569,7 keV and Еγ2=1063 keV)
internal conversion electrons obtained using a
ZnSe(Te)-based detector of 9x9x1 mm3 size and an
S3590 Si-PIN-PD.
In Fig. 3, one can distinctly discern the 109Cd ICE
L-line (EL1 = 84.23 keV, EL2 = 84.68 keV). The K-line
due to 109Cd ICE (EK = 62.52 keV) is not clearly seen at
the background of noises, presumably because of ICE
energy losses in the “dead” surface-adjacent crystal lay-
er. This is confirmed by the data presented in Fig. 3.
The 241Am gamma-line with Eγ = 59.6 keV is clearly
discerned at the background of detector noises. Turning
back to Fig. 2, one should note that detection of 137Cs
ICE allows in principle resolution of K- and L-series
ICE with Ee of 624 and 645 keV. The 207Bi spectrum
shown in Fig. 2 gives clear resolution of ICE and gam-
ma-lines.
Spectra of 241Am gamma-quanta and of 239Pu alpha-
particles obtained using the above-described ZnSe(Te)
based detector of 9x9x1 mm size in combination with
S3590 Si-PIN-PD are shown in Fig. 3.
Channel number
C
ou
nt
in
g
ra
te
, R
.U
.
1000
2000
3000
0 100 200 300 400
200
400
600
800
0 100 200 300 400 500 600 700 800
241AmEγ =59.5 keV
90Sr
50
100
150
0 100 200 300 400 500 600 700 800
239Pu
Eα =5150 keVGenerator
Rα =3 %FWHM=63 keV
FWHM=155 keV
Еα =5486keV
Fig. 4. Spectra of 241Am gamma-quanta, 90Sr beta-
particles and 239Pu alpha-particles obtained using a
ZnSe(Te) based detector of 9x9x1 mm size and an
S3590 Si-PIN-PD.
Alongside the 239Pu alpha-line with Eα = 5150 keV,
the 241Am alpha-line with Eα = 5486 keV was observed.
231Am is formed as a result of 241Pu beta-decay, which is
present in the alpha-source as an admixture. The energy
resolution of the detector for 5150 keV alpha particles is
Rα = 3% (Fig. 4). The intrinsic resolution value Rα for
the ZnSe(Te) crystal was determined according to the
expression
,RRR 2
p
2
d −=α
where Rd is the resolution of the detector-CSPA system
for 155 keV alpha-particles, and Rp is the resolution of
the system involving the detector capacitance and CSPA
with the pulse generator (63 keV). Hence
Rα = 141.6 keV, or Rα = 2.75%, which is not worse than
with the best CsI(Tl) crystals in combination with PMT.
The energy resolution of the ZnSe(Te) – Si-PIN-PD
detector for 207Bi ICE (Re = 3.7%) is essentially better
than with plastic scintillators combined with PMT
(5-7%). The α/β ratio for ZnSe(Te) crystals is ~1, which
is substantially higher as compared with alkali halide
and oxide scintillators.
Our further studies of “fast” ZnSe(Te) scintillator
crystals (which had been also produced at STC RI)
showed that the energy resolution Rγ for detectors of
“ZnSe(Te) – avalanche photodiode” for gamma-radia-
tion with Eγ = 662 keV was ~5.4 %, with intrinsic value
of Rγ being about 3.3 % [3].
4 CONCLUSIONS
Studies of spectrometric characteristics, which were
carried out for combined detectors based on Si-PIN-PD
and ZnSe(Te) crystals, show that such detectors can be
promising for applications in spectrometry of charged
particles.
Our results for α/β ratio, as well as resolution values
Rα, Rβ, Rγ, show that these detectors, taking into account
their high thermal and radiation stability, are very
promising, especially for detection and identification of
fission products of various radioactive materials in ex-
treme conditions.
This work is supported by the INTAS Grant
No 99-01348.
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1.J.Friese et al. The SISWICH, a Detector Telescope
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of scintillators and detectors of ionizing radiation on
their base. Kiev: Naukova dumka, 1998, 310 p.
3.M.Balcerzyk, W.Klarma, M.Moszynski et al. Nonpro-
portionality and temporal response of ZnSe(Te) scintil-
lators studied by large area avalaunche photodiodes and
photomultipliers // Scientific Program and Abstracts of
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lators and Their Applications “SCINT 99”, P1-5,
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2001. №5.
Серия: Ядерно-физические исследования (39), с. 174-176.
176
Moscow State University, Russia. 1999, p. 125.
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2001. №5.
Серия: Ядерно-физические исследования (39), с. 174-176.
177
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