The flow density of atoms sputtered from a cathode of cylinder magnetron
The results of calculations of atom flows, sputtered from a cathode of special cylindrical magnetron sputtering system, presented. The atoms flow in cylinder magnetron will be larger with respect to planar magnetron due to the axial symmetry of the system. It is shown that deposition rate weakly dep...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2005
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| Цитувати: | The flow density of atoms sputtered from a cathode of cylinder magnetron / O.A. Panchenko, A.A. Goncharov, A.V. Demchishin, E.G. Kostin, S.N. Pavlov, B.V. Stetsenko // Вопросы атомной науки и техники. — 2005. — № 2. — С. 170-172. — Бібліогр.: 9 назв. — англ. |
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irk-123456789-797772015-04-05T03:02:14Z The flow density of atoms sputtered from a cathode of cylinder magnetron Panchenko, O.A. Goncharov, A.A. Demchishin, A.V. Kostin, E.G. Pavlov, S.N. Stetsenko, B.V. Low temperature plasma and plasma technologies The results of calculations of atom flows, sputtered from a cathode of special cylindrical magnetron sputtering system, presented. The atoms flow in cylinder magnetron will be larger with respect to planar magnetron due to the axial symmetry of the system. It is shown that deposition rate weakly depends on the diameter of substrate. The atoms flow through the sidewall is calculated. The estimations of sputtered atoms concentration near cathode surface are done. Представлені результати розрахунків потоку атомів, що розпилюються з катоду магнетрону спеціальної циліндричної форми. Потік атомів в циліндричному магнетроні виявляється більшим, ніж у плоскому магнетроні, через аксіальну симетрію системи. Показано, що швидкість осадження атомів слабо залежить від діаметру підкладки. Розрахований потік атомів крізь торці катоду. Зроблені оцінки концентрації розпилених атомів поблизу поверхні катоду. Представлены результаты расчетов потока атомов, распыляемых с катода магнетрона специальной цилиндрической формы. Поток атомов в цилиндрическом магнетроне оказывается больше, чем в плоском магнетроне, из-за аксиальной симметрии системы. Показано, что скорость осаждения атомов слабо зависит от диаметра подложки. Рассчитан поток атомов через торцы катода. Сделаны оценки концентрации распыленных атомов вблизи поверхности катода. 2005 Article The flow density of atoms sputtered from a cathode of cylinder magnetron / O.A. Panchenko, A.A. Goncharov, A.V. Demchishin, E.G. Kostin, S.N. Pavlov, B.V. Stetsenko // Вопросы атомной науки и техники. — 2005. — № 2. — С. 170-172. — Бібліогр.: 9 назв. — англ. 1562-6016 PACS: 52.30.-q http://dspace.nbuv.gov.ua/handle/123456789/79777 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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Low temperature plasma and plasma technologies Low temperature plasma and plasma technologies |
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Low temperature plasma and plasma technologies Low temperature plasma and plasma technologies Panchenko, O.A. Goncharov, A.A. Demchishin, A.V. Kostin, E.G. Pavlov, S.N. Stetsenko, B.V. The flow density of atoms sputtered from a cathode of cylinder magnetron Вопросы атомной науки и техники |
| description |
The results of calculations of atom flows, sputtered from a cathode of special cylindrical magnetron sputtering system, presented. The atoms flow in cylinder magnetron will be larger with respect to planar magnetron due to the axial symmetry of the system. It is shown that deposition rate weakly depends on the diameter of substrate. The atoms flow through the sidewall is calculated. The estimations of sputtered atoms concentration near cathode surface are done. |
| format |
Article |
| author |
Panchenko, O.A. Goncharov, A.A. Demchishin, A.V. Kostin, E.G. Pavlov, S.N. Stetsenko, B.V. |
| author_facet |
Panchenko, O.A. Goncharov, A.A. Demchishin, A.V. Kostin, E.G. Pavlov, S.N. Stetsenko, B.V. |
| author_sort |
Panchenko, O.A. |
| title |
The flow density of atoms sputtered from a cathode of cylinder magnetron |
| title_short |
The flow density of atoms sputtered from a cathode of cylinder magnetron |
| title_full |
The flow density of atoms sputtered from a cathode of cylinder magnetron |
| title_fullStr |
The flow density of atoms sputtered from a cathode of cylinder magnetron |
| title_full_unstemmed |
The flow density of atoms sputtered from a cathode of cylinder magnetron |
| title_sort |
flow density of atoms sputtered from a cathode of cylinder magnetron |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| publishDate |
2005 |
| topic_facet |
Low temperature plasma and plasma technologies |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/79777 |
| citation_txt |
The flow density of atoms sputtered from a cathode of cylinder magnetron / O.A. Panchenko, A.A. Goncharov, A.V. Demchishin, E.G. Kostin, S.N. Pavlov, B.V. Stetsenko // Вопросы атомной науки и техники. — 2005. — № 2. — С. 170-172. — Бібліогр.: 9 назв. — англ. |
| series |
Вопросы атомной науки и техники |
| work_keys_str_mv |
AT panchenkooa theflowdensityofatomssputteredfromacathodeofcylindermagnetron AT goncharovaa theflowdensityofatomssputteredfromacathodeofcylindermagnetron AT demchishinav theflowdensityofatomssputteredfromacathodeofcylindermagnetron AT kostineg theflowdensityofatomssputteredfromacathodeofcylindermagnetron AT pavlovsn theflowdensityofatomssputteredfromacathodeofcylindermagnetron AT stetsenkobv theflowdensityofatomssputteredfromacathodeofcylindermagnetron AT panchenkooa flowdensityofatomssputteredfromacathodeofcylindermagnetron AT goncharovaa flowdensityofatomssputteredfromacathodeofcylindermagnetron AT demchishinav flowdensityofatomssputteredfromacathodeofcylindermagnetron AT kostineg flowdensityofatomssputteredfromacathodeofcylindermagnetron AT pavlovsn flowdensityofatomssputteredfromacathodeofcylindermagnetron AT stetsenkobv flowdensityofatomssputteredfromacathodeofcylindermagnetron |
| first_indexed |
2025-07-06T03:45:38Z |
| last_indexed |
2025-07-06T03:45:38Z |
| _version_ |
1836867690114842624 |
| fulltext |
THE FLOW DENSITY OF ATOMS SPUTTERED FROM A CATHODE OF
CYLINDER MAGNETRON
O.A. Panchenkoa, A.A.Goncharova, A.V. Demchishinb, E.G Kostinc, S.N. Pavlov c,
B.V. Stetsenko a
a Institute of Physics of the NASU, Kiev, Ukraine
b E.O. Paton Electric Welding Institute of the NASU, Kiev,Ukraine
c Institute for Nuclear Research of the NASU, Kiev, Ukraine
The results of calculations of atom flows, sputtered from a cathode of special cylindrical magnetron sputtering system,
presented. The atoms flow in cylinder magnetron will be larger with respect to planar magnetron due to the axial
symmetry of the system. It is shown that deposition rate weakly depends on the diameter of substrate. The atoms flow
through the sidewall is calculated. The estimations of sputtered atoms concentration near cathode surface are done.
PACS: 52.30.-q
1. INTRODUCTION
Magnetron sputtering systems (MSS) are widely
employed for covering manufactured goods by optical,
protecting, technological and decorative films with
thickness about one micrometer [1]. In particular, the
multiplayers transparent films of metal or binary
compounds are applied on windows glasses, which
diminish the heat losses through the windows of industrial
and living buildings [2]. MSS with cathode of disk, lines,
hollows or rode cylinder form are designed for this
purposes [3-6].
These types of MSS are differed by angle and space
distribution of the atom flows sputtered from a cathode. If
the film on substrate consists on one metal the different
constructions of MSS are differed by covering rates and
its surface distribution only.
In a case of complex (for example, binary)
compounds, created by reactive covering method, the
films are formed on a surface of the material sputtered
from the cathode and a gas coming from discharge
atmosphere. The film is formed on a substrate surface due
to the phase transitions between the components of
chemical reaction. Since the density of these flows near
surface, in generally, has different space distribution the
composition and quality of a film will be non
homogeneous. The calculations of the atom flows
sputtered from a cathode of hollow cylinder magnetron
were performed in order to determine the conditions of
the homogeneous binary film application.
2. MAGNETRON CONSTRUCTION
The cylinder magnetron was designed for application
films on outer surface of cylinder substrate. Inner
diameter of magnetron is 230 mm [7], anode consists of
nine rods of 10 mm diameter which are allocated on 50
mm from a cathode surface. The cylinder coaxial to
cathode substrate is immersed inside the magnetron.
Diameter of sample is up to 100 mm.
Magnetic field near cathode surface is created by
permanent magnets system consisted of nine segments
near cathode surface and is orientated perpendicular to
cylinder-generated line. Consequently the discharge is
distributed along magnetron in nine strips form. Hall’s
current is closed over the cathode face ends where the
magnetic field turns over. Magnetic field system and
anodes are rotated around magnetron axis in order to get
the uniform deposition.
3. CALCULATION OF ATOM FLOWS,
WHICH ARE SPUTTERED FROM CATHODE
Calculation of extension of the atoms sputtered by
ions in hollow cylinder magnetron is done under
supposition that the atom free pass is larger than character
dimension of system. Besides the linear and angle
dimensions of anode are neglected. In this case the flow
from a differentially small area dSM in M point on
cathode surface to the dSA element in A point on substrate
surface is determined by known relation [8, 9]:
AM
MA
MA dSdS
R
Bd
A 2
2 )cos()cos( ϕϕ ⋅
⋅=Φ , (1)
where φA,M is the angle between normal to corresponded
areas and vector radius RMA, directed from M point to A
point. B is cathode “brightness”, that is the atom flow in
solid angle unit from area unit. In generally brightness
depends on emission angle. Admitting that angle
distribution of sputtered atoms is in correspondence with
Lambert’s law (cosine law), that is B=const and suppose
B=1, one gets the value of flow density, which comes to
surface element in point A:
M
S MA
MA
A dS
R
M
⋅
⋅
=Φ ∫ 2
)cos()cos( ϕϕ . (2)
170 Problems of Atomic Science and Technology. Series: Plasma Physics (11). 2005. № 2. P. 170-172
Results of numerical calculations are presented on
figures where the linear values are expressed in cathode
radius units since the density values are depended on
relative dimensions only. Dependences of atom flow
density (deposition rate) on substrates of different
diameter as a function of distance from a cathode along its
axis are presented on fig. 1. It is followed from
calculation that maximum flow density equal π. It is
practically reached near substrate surface of radius equal
0.8. Flow density decreases to 2.2 for thin substrate with
radius ~ 0 (see fig. 1).
171
M
S MA
MA
MA dS
R
J
M
∫
⋅
⋅Φ⋅
−
+=Φ 2
)cos()cos(1 ϕϕ
π
α
-1,5 -1,0 -0,5 0,0 0,5 1,0 1,5
0,00
0,20
0,40
0,60
0,80
1,00
1,20
1,40
1,60
1,80
7
1
2
3
4
5
6
D
ep
os
iti
on
ra
te
, r
el
.u
n.
h=z/R R=25.5 mm
Fig.1. Distribution of deposition rate along magnetron
system. Linear dimensions are normalized to the
magnetron radius. The another parameters of the function
F(r,y,l) are: r-substrate radius, l- cathode length. Real
experimental results are symbolized by rhomb
About 60% of sputtered atoms go out through the
magnetron ends for short system (l ~ 0.5) if a substrate
distanced from a cathode. Loses value decreases for thick
substrate on a value approximately equal to ratio of cross
section of substrate and cathode since the radial
distribution of outing flow is practically homogeneous.
An important peculiarity of cylinder magnetron is that
in contrast with planar systems part of sputtered atoms
return to the cathode. In a case when substrate is
distanced from discharge region the atom flow from
cathode will be determined by integral equation:
, (3)
where J is a flow of atoms sputtered from cathode by ion
bombardment, α is a sticking coefficient. It is followed
from this equation that: 1) the cathode surface state is
determined not only by ion bombardment as in planar
system but by deposited atoms also, 2) the concentration
of sputtered atoms increases in discharge what influence
on both state of discharge and cathode sputtering. Besides
this the cathode sputtering along length will be
inhomogeneous since the distribution of returning to
target surface atoms is inhomogeneous. It is easy to show
that for semi-infinite target the value of back flow is equal
to π in its depth and π/2 near the end of target. So the
sputtering of ends will be larger than in center of
magnetron when only the part of sputtered atoms are
deposed on substrate surface.
Solution of equation (3) for real magnetron can be
found by well-known successive approximation method.
Here we will be restricted by obvious result for infinite
long magnetron. In consequence of translate symmetry of
infinite order along cathode axis ΦΑ,M = const , and
integral over surface is equal π. Then one gets from
equation (3):
α
J
A =Φ . (4)
Taking into account the fact that sticking coefficient
depends on the falling down angle its mean value comes
about less than 1. So the value of sputtered atom flow near
target surface will be larger than the flow of atoms
sputtered by ions. Besides this two contrary and equal by
value flows of atoms exist near the cathode surface. One
of them is determined by ion bombardment of considering
part of target area. Second is determined by redeposition
of the atoms sputtered from a surface of target
surrounding the considering part of cathode. So the
concentration of atoms in discharge atmosphere will be in
two times greater with respect to planar system. If one
inserts the substrate into cathode the redeposition atom
flow will be decreased by a value equal to sample radius
(normalized on cathode radius) because of atom
deposition on substrate surface.
Fig. 2. Deposition rate by ring magnetron with diameter of
desorbtion zone 2R= 51 mm as a function of a distance
from a cathode center. Z is a distance from a cathode
plane to substrate. 1-z=30; 2-40; 3-50; 4-60; 5-70; 6-80;
7-90
Fully collision less regime in real magnetron is
realized enough rarely. A consideration of this effect is
complicated problem and need to investigate more detail.
An applicability of collision less approximation is
indirectly confirmed by good agreement of calculation
done in this work (see fig. 2) and experimental results
obtained in [9]. Note that pit of deposition on substrate
surfaces is appeared in planar systems.
4. CONCLUSIONS
1. Calculations of atom flows sputtered from a cathode
of cylinder magnetron are presented.
2. It is shown that in collisionless regime the
deposition rate weakly depends on substrate diameter.
3. The sputtered atom flow through the magnetron
ends can reach 60% for short systems (magnetron length
is equal about to target radius). This value can be
decreased up to ~ 20 % for cathode length equals about
two its diameter or more.
4. The estimation of sputtered atom concentration near
target surface is done. Transport of sputtered material
along target is taking into account. It is assumed that mean
value of sticking coefficient is less than 1.
3 2 1 0 1 2 30
1
2
3
0 y, 1,( )
.2 y, 1,( )
.4 y, 1,( )
.8 y, 1,( )
.17 y, .61,( )
y
F
F
F
F
F
ACKNOWLEDGEMENTS
This works was supported, in part, by STCU project
#118(K).
REFERENCES
1. V.V. Danilin. Reactivnoe napylenie v razryade
magnetrona. Moscow:«GITTL», 1987(in Russian).
2. C.G. Granqvist. Window coatings for the future //
Thin Solid Films (193/194). 1990, p. 730-741.
3. S.M. Rossnagel. Gas density reduction effects in
magnetrons // J.Vac.Sci.Technol. A 6(1). Jan/Feb
1988, p. 19-24.
4. G. Beister, T. Dietrich, Ch. Schaefer, M. Scherer,
J.Szczyrbowski. Progress in large-area glass coatings
by high-rate sputtering // Surface and Coatins
Technology (76-77). 1995, p. 776-785.
5. J.A. Thornton. End-effects in cylindrical magnetron
sputtering sources // J. Vac. Sci. Technol. 16(1).
Jan./Feb. 1979.
6. Patent of Ukraine № 1994, 19.02.2003. Cylindrical
magnetron with inner lateral sputtered surface /
A.V.Demchishin, Yu.A. Kurapov, V.A. Michenko,
Ye.G. Kostin, Ye.G. Ternovoj, A.A. Goncharov.
7. M. Born, E. Bolf. Osnovy optiki. Moscow:
«Energija», 1982 (in Russian).
8. M.M. Gurevich. Vvedenie v photometriju. Moscow:
«Energija», 1968.
9. U. Patt. Technology of high-speed sputtering with
planar magnetrons for electronic and optical
functional layers: Booklet of Leibold-Serius
company. FRG, Hanau, 1980, p.1-20.
ПЛОТНОСТЬ ПОТОКА АТОМОВ, РАСПЫЛЕННЫХ С КАТОДА ЦИЛИНДРИЧЕСКОГО
МАГНЕТРОНА
O.A. Панченко, A.A. Гончаровv, A.В. Демчишин, E.Г. Koстин, С.Н. Павлов, Б.B. Стеценко
Представлены результаты расчетов потока атомов, распыляемых с катода магнетрона специальной
цилиндрической формы. Поток атомов в цилиндрическом магнетроне оказывается больше, чем в плоском
магнетроне, из-за аксиальной симметрии системы. Показано, что скорость осаждения атомов слабо зависит от
диаметра подложки. Рассчитан поток атомов через торцы катода. Сделаны оценки концентрации распыленных
атомов вблизи поверхности катода.
ГУСТИНА ПОТОКУ АТОМІВ, РОЗПИЛЕНИХ З КАТОДУ ЦИЛІНДРИЧНОГО МАГНЕТРОНУ
O.A. Панченко, О.A. Гончаров, A.В. Демчишин, E.Г Koстин, С.М. Павлов, Б.B. Стеценко
Представлені результати розрахунків потоку атомів, що розпилюються з катоду магнетрону спеціальної
циліндричної форми. Потік атомів в циліндричному магнетроні виявляється більшим, ніж у плоскому
магнетроні, через аксіальну симетрію системи. Показано, що швидкість осадження атомів слабо залежить від
діаметру підкладки. Розрахований потік атомів крізь торці катоду. Зроблені оцінки концентрації розпилених
атомів поблизу поверхні катоду.
1. INTRODUCTION
2. MAGNETRON CONSTRUCTION
ACKNOWLEDGEMENTS
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