Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data

Monte-Carlo method is used for investigating the energy dependence of sensitivity of CdZnTe- and TlBr-detectors of gamma-radiation, which operate in the mode of pulse-amplitude analysis. We researched the approximate formulae that describe this dependence in the range of gamma-quantum energies from...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2014
Автор: Skrypnyk, A.I.
Формат: Стаття
Мова:English
Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2014
Назва видання:Вопросы атомной науки и техники
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/80481
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data / A.I. Skrypnyk // Вопросы атомной науки и техники. — 2014. — № 5. — С. 177-183. — Бібліогр.: 7 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-80481
record_format dspace
spelling irk-123456789-804812015-04-19T03:02:47Z Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data Skrypnyk, A.I. Вычислительные и модельные системы Monte-Carlo method is used for investigating the energy dependence of sensitivity of CdZnTe- and TlBr-detectors of gamma-radiation, which operate in the mode of pulse-amplitude analysis. We researched the approximate formulae that describe this dependence in the range of gamma-quantum energies from 30 keV to 3 MeV. It is proposed a method for determining the tting parameters for approximate formulae through gamma-radiation spectra measured experimentally by several reference sources of gamma-radiation. In particular, it can be ²⁴¹Am, ¹³⁷Cs and ⁶⁰Co gamma-radiation sources. It is also discussed the measurements with additional radiation sources that can be used for improving an accuracy of reconstruction of energy dependence of detectors' sensitivity. Метод Монте-Карло использован для исследования энергетической зависимости чувствительности CdZnTe- и TlBr-детекторов гамма-излучения, которые работают в режиме анализа амплитуд импульсов. Мы изучили приближенные формулы, описывающие эту зависимость в диапазоне энергий гамма-квантов от 30 кэВ до 3 МэВ. Предлагается метод определения параметров подгонки для приближенных формул по спектрам гамма-излучения, которые экспериментально измерены с помощью нескольких стандартных источников излучения. В частности, это могут быть источники гамма-излучения ²⁴¹Am, ¹³⁷Cs и ⁶⁰Co . Обсуждаются также измерения с дополнительными источниками излучений, которые могут быть использованы для улучшения точности восстановления энергетической зависимости чувствительности детекторов. Метод Монте-Карло використаний для дослiдження енергетичної залежностi чутливостi CdZnTe- i TlBr-детекторiв гамма-випромiнювання, котрi працюють в режимi аналiзу амплiтуд iмпульсiв. Ми дослiдили наближенi формули, якi описують цю залежнiсть в дiапазонi енергiй гамма-квантiв вiд 30 кеВ до 3 МеВ. Пропонується метод визначення параметрiв пiдгонки для наближених формул за спектрами гамма-випромiнювання, якi експериментально вимiрянi за допомогою декiлькох стандартних джерел випромiнювання. Зокрема, це можуть бути джерела гамма-випромiнювання ²⁴¹Am, ¹³⁷Cs та ⁶⁰Co. Обговорюються також вимiрювання з додатковими джерелами випромiнювань, якi можуть бути використанi для полiпшення точностi вiдновлення енергетичної залежностi чутливостi детекторiв. 2014 Article Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data / A.I. Skrypnyk // Вопросы атомной науки и техники. — 2014. — № 5. — С. 177-183. — Бібліогр.: 7 назв. — англ. 1562-6016 PACS: 29.40.Wk, 85.30De, 07.85.-m http://dspace.nbuv.gov.ua/handle/123456789/80481 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Вычислительные и модельные системы
Вычислительные и модельные системы
spellingShingle Вычислительные и модельные системы
Вычислительные и модельные системы
Skrypnyk, A.I.
Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data
Вопросы атомной науки и техники
description Monte-Carlo method is used for investigating the energy dependence of sensitivity of CdZnTe- and TlBr-detectors of gamma-radiation, which operate in the mode of pulse-amplitude analysis. We researched the approximate formulae that describe this dependence in the range of gamma-quantum energies from 30 keV to 3 MeV. It is proposed a method for determining the tting parameters for approximate formulae through gamma-radiation spectra measured experimentally by several reference sources of gamma-radiation. In particular, it can be ²⁴¹Am, ¹³⁷Cs and ⁶⁰Co gamma-radiation sources. It is also discussed the measurements with additional radiation sources that can be used for improving an accuracy of reconstruction of energy dependence of detectors' sensitivity.
format Article
author Skrypnyk, A.I.
author_facet Skrypnyk, A.I.
author_sort Skrypnyk, A.I.
title Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data
title_short Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data
title_full Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data
title_fullStr Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data
title_full_unstemmed Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data
title_sort reconstruction of energy dependence of the sensitivity of cdznte- and tlbr-detectors through the restricted data
publisher Національний науковий центр «Харківський фізико-технічний інститут» НАН України
publishDate 2014
topic_facet Вычислительные и модельные системы
url http://dspace.nbuv.gov.ua/handle/123456789/80481
citation_txt Reconstruction of energy dependence of the sensitivity of CdZnTe- and TlBr-detectors through the restricted data / A.I. Skrypnyk // Вопросы атомной науки и техники. — 2014. — № 5. — С. 177-183. — Бібліогр.: 7 назв. — англ.
series Вопросы атомной науки и техники
work_keys_str_mv AT skrypnykai reconstructionofenergydependenceofthesensitivityofcdznteandtlbrdetectorsthroughtherestricteddata
first_indexed 2025-07-06T04:29:38Z
last_indexed 2025-07-06T04:29:38Z
_version_ 1836870458664812544
fulltext RECONSTRUCTION OF ENERGY DEPENDENCE OF THE SENSITIVITY OF CdZnTe- AND TlBr-DETECTORS THROUGH THE RESTRICTED DATA A. I. Skrypnyk∗ National Science Center ”Kharkov Institute of Physics and Technology”, 61108, Kharkov, Ukraine (Received June 24, 2014) Monte-Carlo method is used for investigating the energy dependence of sensitivity of CdZnTe- and TlBr-detectors of gamma-radiation, which operate in the mode of pulse-amplitude analysis. We researched the approximate formulae that describe this dependence in the range of gamma-quantum energies from 30 keV to 3 MeV. It is proposed a method for determining the fitting parameters for approximate formulae through gamma-radiation spectra measured experimentally by several reference sources of gamma-radiation. In particular, it can be 241Am, 137Cs and 60Co gamma-radiation sources. It is also discussed the measurements with additional radiation sources that can be used for improving an accuracy of reconstruction of energy dependence of detectors’ sensitivity. PACS: 29.40.Wk, 85.30De, 07.85.-m 1. INTRODUCTION The study of wide-band gap semiconductor radi- ation detectors is of great interest for far more than one year. Cd(Zn)Te-, TlBr-, HgI2-materials are ones of the most suitable candidates for creating commer- cially available radiation detection systems with quite good spectroscopic properties in the cases of opera- ting at room temperatures [1, 2]. However, some fea- tures of these semiconductor materials create prob- lems in determining a detector’s main operating char- acteristics such as the dependence of their sensitivity, δ, on the energy of the detected gamma-rays. The va- riety of electrophysical characteristics of wide-band gap semiconductor detectors results in the signifi- cant variations in the sensitivity of identical detectors working under the same bias condition. It causes a necessity of detailed measurements of energy depen- dence of the sensitivity for every detector. Considerable assistance in answering these prob- lems may spring from first principles’ simulations of material and detector operation. It could be of help in developing semi-experimental methods for estimating and measuring detector parameters, such as the ener- gy dependence of the detectors’ sensitivity. Simu- lation will be especially useful for multi-detector sys- tems wherein the sensitivity of all components must be known and taken into account for optimal system performance. In the present work, simulation of response of CdZnTe- and TlBr-detectors was researched. Analy- sis of energy dependence of detectors’ sensitivity was made. It was considered the simple approximation formulae for determining the dependence of the sen- sitivity for CdZnTe- and TlBr-detectors on the energy for gamma-rays in the energy range from 30 keV to 3MeV. Fitting parameters for these formulae can be determined with a satisfactory accuracy basing on the measurements of gamma-quantum spectra from sev- eral reference sources. Analysis of results from sim- ulation of response functions and energy dependence of sensitivity for CdZnTe-detectors allowed to pro- pose a method for calculating the fitting parameters of approximate formulae based on the experimentally measured gamma-ray spectra from 241Am, 137Cs and 60Co reference sources. This method was used for re- constructing the energy dependence of sensitivity of CdZnTe-detector. Numerical experiment allowed us to confirm a validity of the obtained approximate for- mulae for TlBr-detectors. Overall, it was concluded that the sensitivity of CdZnTe- and TlBr-detectors can be adequately reconstructed using approximation formulae which, therefore, appreciably simplify the procedures of their calibration. 2. MODEL VERIFICATION To investigate characteristics of TlBr- and CdZnTe-detectors Geant4 v.4.9.6 package – univer- sal toolkit for the simulating the passage of charged particles, neutrons and gamma-quanta through mat- ter [3] was used. We simulated the passage of gamma-quanta through the detectors by Monte-Carlo method via the user program code described detail in [4], embedded in Geant4-package. The user program code mimics the detector’s res- ponse for every gamma-quantum. Firstly, program calculates the value of the ionization energy, Ei, ∗Corresponding author E-mail address: belkas@kipt.kharkov.ua ISSN 1562-6016. PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2014, N5 (93). Series: Nuclear Physics Investigations (63), p.177-183. 177 transferred to the detector by the absorbed gamma- quantum with the initial energy of Eγ, and, secondly, it computers the value of charge induced on the de- tector’s contacts for every interacted photon. To obtain from Monte-Carlo simulation the detec- tor’s response function that will be in a good agree- ment with the experimental response function of real detector the user program code takes into account the great number of factors which influence on the am- plitude of the induced charge including fluctuations in the generation of electron-hole pairs, variations in the numbers of collected electrons and holes and elec- tronic noise [4]. Previously, for calculating the response functions of CdTe- and Cd(Zn)Te-detectors with this model, the EGSnrc Monte-Carlo code was used. In [5, 6] we compared results of Monte-Carlo simulation ob- tained by EGSnrc- and Geant4-packages. We ob- tained a good agreement between calculated- and experimental-data for gamma-ray lines that can be considered almost monochromatic. 3. DETERMINATION OF ENERGY DEPENDENCE OF TlBr- AND CdZnTe-DETECTORS’ SENSITIVITY One of the critical characteristics that determines the operating the semiconductor gamma-radiation detectors at room temperatures is their sensitivity, δ, that is defined as the ratio of the number of pulses, N, produced by the detector to the value of exposure (X) or absorbed (D) radiation dose: δX = N/X or δD = N/D. A sharp dependency of sensitivity from the gamma-radiation energy, δX,D(Eγ), is a charac- teristic feature of all wide band-gap semiconductors used for detecting gamma-quanta. The measurement of sensitivity of detectors is a laborious problem. To determine this value for semi- conductor detectors in the range of gamma-quantum energies from 30 keV to 3MeV it is necessary about 10 reference gamma-radiation sources. In some cases, it is not possible to conduct experiment with such number of reference sources. Monte-Carlo simulation of semiconductor detectors can be used as solution of this problem. However, for obtaining correct va- lues of sensitivity via Monte-Carlo simulation it needs to have accurate characteristics of detectors some of which, for example, electrophysical parameters, are not always known. Analytic formulae exist for only the simplest ge- ometries of measurement setup in which the influence of the Compton scattering of gamma-rays is negli- gible. In such cases, the user can easily calculate the radiation dose created by the gamma-quantum flow. The principal reason is that the Compton scat- tering changes the energy spectrum of gamma-rays in a manner that is highly dependent on the detec- tor dimensions. It does not allow to obtain analyti- cal expressions for calculating the energy dependence of sensitivity of semiconductor detectors in the wide range of energies of gamma-quanta. In the present work, we used Monte-Carlo method for simulating the response functions of two types of planar semiconductor detectors of gamma- radiation: CdZnTe and TlBr. Firstly, we consid- ered 6 × 6 × 3 mm3 CdZnTe-detector. Fig. 1 plots δX(Eγ), the energy dependency of sensitivity of such detector, calculated by the Geant4 code at a zero-noise discrimination threshold. At gamma- ray energies between 10 and 60 keV the sensitiv- ity, δX(Eγ), increases by more than one order-of- magnitude. In contrast, at gamma-ray energies bet- ween 80 keV and 1MeV, the sensitivity drops by more than two orders of magnitude. An analytical form for the energy dependency, δX(Eγ), in the entire range of gamma-quantum energies between 10 keV and 3MeV cannot be obtained. Thus, the curve of sensitivity was divided into 3 parts. The behav- ior of δX(Eγ) in CdZnTe-detectors in the different energy ranges was approximated by three different functions. In Fig.1 and the following ones, the names of fitting functions correspond to the names that are used in the Origin 9 software [7]. The log-log scale of Fig.1 specifies the visible shape of the fitting curves. 0.01 0.1 1 102 103 104 3 2 Geant4 1) Linear fit 2) Holliday fit 3) Reciprocal fit E , MeV 1 X, pulse/ R Fig.1. Approximate description of the dependency, δX(Eγ), in three ranges of gamma-ray energies It is easy to determine an analytical form of func- tions that approximates a dependency of δX(Eγ) in regions 1 and 3. At gamma-ray energies between 10 and 60 keV (region 1), the sensitivity of the CdZnTe- detector can be approximated by a linear function such as δX(Eγ) ≈ a1 + b1 × Eγ , Eγ < 60 keV. (1) At gamma-quantum energies more than 0.3MeV (re- gion 3), the inverse dependency is evident in the form δX(Eγ) ≈ 1 a3 + b3 × Eγ , Eγ > 0.3MeV. (2) In Eqs. (1) and (2), the values of a1, b1, a3, and b3 are the fitting parameters that can be determined from the data of the experimental measurements of the energy dependency, δX(Eγ). The difference be- tween units for measuring energy (keV and MeV) in Eqs. (1) and (2) is related to the method of deter- mining the fitting parameters. 178 In region 1, good accuracy was achieved in eval- uating the parameters for the linear fitting Eq. (1) with only three experimental points. For example, they could be measurements of δX(Eγ), the sensitiv- ity of CdZnTe detectors, for gamma-ray energies of 31.6 keV (133Ba source, multiplet) or 32.9 keV (137Cs source, multiplet) plus 39.9 keV (152Eu source, dou- blet) and 59.54 keV (241Am source, monoenergetic line). For gamma-ray energies up to approximately 80 keV, the Compton scattering in CdZnTe is in- significant, and the probability of the photoelectric absorption is very high. The process of reconstruct- ing the functional dependency of δX(Eγ) and de- termining the sensitivity of CdZnTe-detectors in the range of gamma-ray energies between 25 and 60 keV is sufficiently easy. Below 25 keV the results of lin- ear fitting with only three experimental points are doubtful in that it is apparently connected with a near-vertical slope of the approximation curve. The sensitivity of the investigated CdZnTe- detectors reaches a maximum value at gamma-rays between 60 and 80 keV. Moreover, in this energy range, the value of sensitivity, δX(Eγ), changes only within 5%, so for the given approximations, it is as- sumed that it is constant. It was shown [6] that the determination of the fitting parameters for Eq. (2) can be simplified by rewriting it in the form 1 δX(Eγ) ≈ a3 + b3 × Eγ , Eγ > 0.3MeV. (3) In this case, a linear function can be fitted through three experimental points. In reconstructing the high-energy region for the dependency of the sensitiv- ity of CdZnTe-detectors from the gamma-ray energy, we can use experimental data for 241Am-, 137Cs- and 60Co-sources. In Table 1, we compare the coefficients of fitting functions Eq. (1) and (3) obtained by analyzing an array of values of the simulated functions, δX(Eγ), and using only three points in regions 1 and 3 of this function (see Fig.1). According to the data from Table 1, the variation in the coefficients of the slope of linear dependencies used for approximating the energy dependency of the sensitivity of detectors is no more than 9%. Hence, we can, with satisfactory accuracy, reconstruct the dependency of δX(Eγ) in regions 1 and 3 (see Fig.1) through three measured values of sensitivity. Table 1. Coefficients of approximation Eqs. (1) and (3) for CdZnTe detector Approximation formula Slope, b1,3 Ratio, bfull/bthree Whole array of data, bfull Three points, bthree δX(Eγ) ≈ a1 + b1 × Eγ , Eγ < 60 keV 250± 10, pulse/(µR× keV ) 230± 28, pulse/(µR× keV ) 1.09 1 δX(Eγ) ≈ a3 + b3 × Eγ , Eγ > 0.3 MeV 0.01891± 0.00021, µR/(MeV × pulse) 0.01869± 0.00025, µR/(MeV × pulse) 1.01 From Fig.1 it is evident that the regions 2 and 3 of the δX(Eγ) dependency partially overlap in the energy range from 300 to 400 keV. The analysis of the calculated dependency of 1/δX(Eγ) showed that in considering gamma-ray energies between approxi- mately 0.08- and 0.4MeV, it is convenient to use the next approximation formula with less number of fit- ting parameters 1 δX(Eγ) ≈ a× Eb γ , 0.08MeV < Eγ < 0.4MeV. (4) Fig.2 demonstrates the result of using Eq. (4) for fitting the calculated dependency of 1/δX(Eγ) in the range of low gamma-ray energies. As illustrated, em- ploying Eq. (4) for fitting the dependency of δX(Eγ) through three energies is equally effective as model- ing the sensitivity in detail by a Monte-Carlo method. The data from Table 2 show that the difference be- tween the coefficients of Eq. (4) obtained by approx- imating the different sets of data is 1...3%. In deciding on the experimental points for the fitting, we take into account first those as follows from the data in Fig. 1 δX(60 keV ) ≈ δX(80 keV ). The choice of a gamma-ray energy of 122.06 keV as the second point is conditioned by the fact that for a 57Co source, the contribution in the measured sensitivity of CdZnTe-detectors from this line con- siderably exceeds the contribution from all other high-energy lines, and the contribution in the mea- sured sensitivity from 14.4 keV line is subtracted easily. The quality of the fitting in the energy range from 0.08 to 0.4MeV depends on the possi- bility of measuring the third point. A monoenergetic 203Hg (E=279.2 keV) source is a very good candi- 179 date; however, the 203Hg isotope has a half-life of only 46.6 days. For the 51Cr isotope that also has an inten- sive single line, E=320.1 keV, the half-life is 27.7 days. 0.0 0.1 0.2 0.3 0.4 0 1x10-3 2x10-3 3x10-3 1/ X , R/pulse Geant4 Allometric fit three-point fit E , MeV Fig.2. Fitting of the dependency of 1/δX(Eγ) of CdZnTe-detector in the range of gamma-ray energies between 90 and 400 keV Table 2. Fitting parameters for Eq. (4) Parameter Whole array of data Three points Ratio b 2.38± 0.05 2.4± 0.1 0.99 a 0.029±0.002 0.03±0.003 0.97 For an approximate calculation, the partial overlap- ping in regions 2 and 3 of the energy dependency of the sensitivity, δX(Eγ), was used. For the third point needed to obtain an approximation in region 2, the value for δX (at 0.4 MeV) obtained by Eq. (3) can be used. However, in this case, the discrep- ancy in the fitting through three points with detailed Monte-Carlo simulation may reach up to several tens of percents. For example, for the CdZnTe-detector we investigated, the sensitivity, δX(Eγ), obtained by Eq. (4) for the range of gamma-quantum energies from 0.2 to 0.4 MeV is understated by no less than one third. Fig.3 presents the difference between the ap- proximate 1/δ calculation with investigated formulae and the Monte-Carlo simulation data for CdZnTe- detectors. It is evident that the maximum discrep- ancy is about 10%. TlBr-detector was simulated via Geant4 package for verification of possibility of using the formulae investigated above for TlBr-material. The Fig.4 shows the 1/δ dependence for 7 mm2×1 mm TlBr-detectors in the energy range Eγ below 0.3 MeV and its fitting by the formula (4). It is evident that sensitivity of TlBr-detectors can be reconstructed with a good accuracy. Fig.5 presents the total 1/δ dependence for TlBr- detector. As we can see TlBr-detector does not have a linear energy dependence of sensitivity in the high en- ergy region as it was shown for CdZnTe-detector [4]. Thus, we cannot use the formula (3) for reconstruct- ing the sensitivity in the range of gamma-quantum energies above 0.3MeV. However, in this case we can apply the more complicated formula, which is also correct for CdZnTe-detector: 1 δX(Eγ) = a× b× E1−c γ 1 + b× E1−c γ , Eγ > 0.3MeV. (5) 1 2 0 10 20 , % E , MeV CdZnTe E < 0.3 MeV E > 0.3 MeV Fig.3. The difference between the approximate 1/δ calculation with investigated formulae and the Monte-Carlo simulation data for CdZnTe-detectors 0.0 0.1 0.2 0 4x10-3 8x10-3 1/ , R/pulse E , MeV TlBr Simulation Formula (4) Fig.4. The 1/δ dependence at Eγ below 0.3MeV for TlBr-detector 0 1 2 0.0 0.2 0.4 0.6 1/ , R/pulse E , MeV TlBr Simulation Formula (5) Fig.5. The total 1/δ dependence for TlBr-detector The difference between the approximate 1/δ calculation with investigated formulae and the Monte-Carlo simulation data for TlBr-detectors is shown in Fig.6. We can conclude that max- imum discrepancy between values of 1/δ ob- 180 tained by formulae and simulation is in the range about from 0.32 MeV to 0.38 MeV. 1 2 -0.2 0.0 0.2 , % E , MeV TlBr E < 0,3 MeV E > 0,3 MeV Fig.6. The difference between the approximate 1/δ calculation with investigated formulae and the Monte-Carlo simulation data for TlBr-detectors Overall, the sensitivity of CdZnTe- and TlBr- detectors can be restored by the investigated ap- proximate formulae in the range of gamma-quantum energies from 30 keV to 3 MeV. 4. EXAMPLE OF RECONSTRUCTING THE SENSITIVITY OF CdZnTe-DETECTOR THROUGH EXPERIMENTAL DATA Basing on data of Ref. [6] we considered the ex- ample of reconstruction of CdZnTe-detector’s sensi- tivity. To reconstruct the sensitivity by investigated formulae described above it was used the experi- mental data derived from 5×5×1.8 mm3 CdZnTe- detector with known values of transport parame- ters for electrons and holes. Its sensitivity was measured in the reference points through gamma- quantum spectra with 59.54 keV (241Am), 122.06 keV (57Co), 661.67 keV (137Cs), and 1.28 MeV (60Co) energies. For evaluating the spectrum of gamma- rays from the 241Am source, the chosen discrimi- nation threshold of noise was at a level of 40 keV. Other spectra were obtained at the 60 keV discrim- ination threshold for noise. The bias voltage of de- tectors in all measurements was 300 V. In detailing the results of fitting in Fig.7, the respective depen- dency, δX(Eγ), obtained by simulating the response of CdZnTe-detectors using the Geant4 toolkit was shown. Fig.7 reveals that the maximum difference be- tween the function of δX(Eγ) reconstructed through experimental measurements and data of simulation is evident at the edges of the fitting region, i.e., in the range of gamma-ray energies below 90 keV and in the energy range from 0.3 to 0.5 MeV. Additional experimental measurements of sensitivity, δX(Eγ), in these ranges of gamma-quantum energies essentially should improve the quality-of-fit. In Table 3, it was compared the values of the parameters of approximation functions for the re- constructed dependency, δX(Eγ), and for the depen- dency, δX(Eγ), obtained from the findings of our de- tailed Monte-Carlo simulation. The parameters of approximation function in region 3 agree with the results of the simulation much better than in re- gion 2. This may reflect the absence of the ex- perimental measurements for the sensitivity of the CdZnTe-detector in the range of gamma-ray energies from 300 to 400 keV. For obtaining parameters for the approximation function in region 2, a value of δX(Eγ = 0.4MeV ) calculated from the approximate dependency, δX(Eγ), in region 3 was used. The es- sential difference between the ADC step size in the measurements (about 0.7 keV) and for the simulation (50 eV) of the response of CdZnTe detectors may be another factor affecting the quality-of-fit in region 2. It was concluded that using the presented methodology gives satisfactory results for recon- structing the energy dependency of the sensitivity for CdZnTe-detectors. From the considered example we see that this method can be applied to the cases of high electronic noise and a lack of extensive experi- mental data. 0.1 1 101 102 103 137Cs 60Co 57Co E , MeV Geant4 Fitting section 2 Fitting section 3 Experiment X , pulse/ R 241Am Fig.7. Example of reconstruction of dependency, δX(Eγ), for the 5× 5× 1.8 mm3 CdZnTe detector 5. CONCLUSIONS We investigated the dependence of energy sensi- tivity of CdZnTe- and TlBr-detectors. The approx- imate formulae for reconstructing the sensitivity of CdZnTe were researched. It was shown that the greater part of the curve of sensitivity may be re- constructed using measurements with three reference sources. However, presence of other measurements can significantly improve the accuracy of reconstruc- tion. In region 1 (Eγ < 60 keV ) the sensitivity can be reconstructed through three experimental refer- ence points, such as with 137Cs (32.9 keV), 152Eu (39.9 keV) and 241Am (59.54 keV) sources. The reconstruction of sensitivity in region 2 (90 keV< Eγ < 0.3 MeV) require measurements with 241Am (59.54 keV) and 57Co (122.06 keV) sources. Also, short-lived isotope of 203Hg (Eγ = 279.2 keV) can be used. In region 3 (Eγ > 0.3 MeV) the energy depen- dence of the sensitivity, δX(Eγ), for planar CdZnTe- detectors can be reconstructed based on experimental measurements of sensitivity also at three reference points with 241Am (59.54 keV), 137Cs (661.67 keV), and 60Co (about 1.28 MeV) sources. 181 Table 3. Fitting parameters for reconstructed dependency, δX(Eγ), for the 5× 5× 1.8 mm3 CdZnTe-detector Approximation formula Parameters Experiment Simulation 1 δX(Eγ) ≈ a× Eb γ , 0.08MeV < Eγ < 0.4MeV a = 0.19± 0.01 pulse/(µR×MeV ) b = 2.84± 0.06 a = 0.12± 0.01 pulse/(µR×MeV ) b = 2.51± 0.09 1 δX(Eγ) ≈ a3 + b3 × Eγ , Eγ > 0.3MeV b3 = 0.052± 0.002 µR/(pulse×MeV ) a3 = −0.007± 0.002, µR/pulse b3 = 0.0502± 0.0006 µR/(pulse×MeV ) a3 = −0.0081±0.0008, µR/pulse Maximum discrepancy of 1/δ values in the total range from 30 keV to 3 MeV obtained by the investi- gated formulae and Monte-Carlo simulation is about 10%. We used the investigated formula obtained for CdZnTe-detectors for reconstructing the sensitivity of TlBr detectors. Our analysis allows us to conclude that more quantity of these formulae can be useful for receiving TlBr-detectors’ sensitivity. Maximum dis- crepancy of 1/δ values obtained by the investigated formulae and Monte-Carlo simulation is in the range about from 0.32 MeV to 0.38 MeV. The energy dependence of the sensitivity for CdZnTe-detector was reconstructed by approximate formulae within a satisfactory accuracy through the experimental measurements in the reference gamma- quantum spectra with 59.54 keV (241Am), 122.06 keV (57Co), 661.67 keV (137Cs), and 1.28 MeV (60Co) en- ergies. ACKNOWLEDGEMENTS Author is very grateful to A.V. Rybka and V.E. Kutny for providing the experimental data for CdZnTe-detector and Prof. M.A. Khazhmuradov for his help in the interpretation of the obtained results. References 1. Demet Demir, Pinar Onder, Tuba Oznuluer. Per- formance of CdTe-detector in the 13...1333 keV energy range // Radiation Physics and Chem- istry. 2010, v. 79, p. 1132-1136. 2. A.Churilov, et al. TlBr and TlBrxI1 − x crystals for γ-ray detectors // Journal of Crystal Growth. 2010, v. 32, p. 1221–1227. 3. S.Agostinelli, et al. Geant4—a simulation toolkit // Nuclear Instruments and Methods in Physics Research A. 2003, v. 56, p. 250-303. 4. A. Zakharchenko, A.Rybka, V.Kutny, A. Skrypnyk, M.Khazhmuradov, P. Fochuk, A.Bolotnikov, R. James. Transport properties and spectrometric performances of CdZnTe gamma-ray detectors // Proc. of SPIE. 2012, v. 8507, p. 85071I-1–7. 5. A. Skrypnyk, A. Zakharchenko, M.Khazhmuradov. Comparison of GEANT4 with EGSnrc for simulation of gamma-radiation detectors based on semi-insulating materials // Problems of atomic science and technology. Series: ”Nuclear Physics Investigations”(56). 2011, N5, p. 93-100. 6. A.A. Zakharchenko, A.I. Skrypnyk, M.A.Khazhmuradov, A.V.Rybka, V.E.Kutny, P.M.Fochuk, V.M. Sklyarchuk, A.E.Bolotnikov, and R.B. James. The energy dependence of the sensitivity for planar CdZnTe-gamma-ray- detectors // Proc. of SPIE. 2013, v. 8852, p. 88521B-1–12. 7. OriginLab – Origin and OriginPro – Data Analysis and Graphing Software. http://www.originlab.com 182 ÂÎÑÑÒÀÍÎÂËÅÍÈÅ ÝÍÅÐÃÅÒÈ×ÅÑÊÎÉ ÇÀÂÈÑÈÌÎÑÒÈ ×ÓÂÑÒÂÈÒÅËÜÍÎÑÒÈ CdZnTe- è TlBr-ÄÅÒÅÊÒÎÐΠÏÎ ÎÃÐÀÍÈ×ÅÍÍÛÌ ÄÀÍÍÛÌ À.È.Ñêðûïíèê Ìåòîä Ìîíòå-Êàðëî èñïîëüçîâàí äëÿ èññëåäîâàíèÿ ýíåðãåòè÷åñêîé çàâèñèìîñòè ÷óâñòâèòåëüíîñòè CdZnTe- è TlBr-äåòåêòîðîâ ãàììà-èçëó÷åíèÿ, êîòîðûå ðàáîòàþò â ðåæèìå àíàëèçà àìïëèòóä èìïóëü- ñîâ. Ìû èçó÷èëè ïðèáëèæåííûå ôîðìóëû, îïèñûâàþùèå ýòó çàâèñèìîñòü â äèàïàçîíå ýíåðãèé ãàììà- êâàíòîâ îò 30 êý äî 3 ÌýÂ. Ïðåäëàãàåòñÿ ìåòîä îïðåäåëåíèÿ ïàðàìåòðîâ ïîäãîíêè äëÿ ïðèáëèæåííûõ ôîðìóë ïî ñïåêòðàì ãàììà-èçëó÷åíèÿ, êîòîðûå ýêñïåðèìåíòàëüíî èçìåðåíû ñ ïîìîùüþ íåñêîëüêèõ ñòàíäàðòíûõ èñòî÷íèêîâ èçëó÷åíèÿ.  ÷àñòíîñòè, ýòî ìîãóò áûòü èñòî÷íèêè ãàììà-èçëó÷åíèÿ 241Am, 137Cs è 60Co. Îáñóæäàþòñÿ òàêæå èçìåðåíèÿ ñ äîïîëíèòåëüíûìè èñòî÷íèêàìè èçëó÷åíèé, êîòîðûå ìîãóò áûòü èñïîëüçîâàíû äëÿ óëó÷øåíèÿ òî÷íîñòè âîññòàíîâëåíèÿ ýíåðãåòè÷åñêîé çàâèñèìîñòè ÷óâ- ñòâèòåëüíîñòè äåòåêòîðîâ. ÂIÄÍÎÂËÅÍÍß ÅÍÅÐÃÅÒÈ×ÍÎ� ÇÀËÅÆÍÎÑÒI ×ÓÒËÈÂÎÑÒI CdZnTe- i TlBr-ÄÅÒÅÊÒÎÐI ÇÀ ÄÎÏÎÌÎÃÎÞ ÎÁÌÅÆÅÍÈÕ ÄÀÍÈÕ À. I.Ñêðèïíèê Ìåòîä Ìîíòå-Êàðëî âèêîðèñòàíèé äëÿ äîñëiäæåííÿ åíåðãåòè÷íî¨ çàëåæíîñòi ÷óòëèâîñòi CdZnTe- i TlBr-äåòåêòîðiâ ãàììà-âèïðîìiíþâàííÿ, êîòði ïðàöþþòü â ðåæèìi àíàëiçó àìïëiòóä iìïóëüñiâ. Ìè äî- ñëiäèëè íàáëèæåíi ôîðìóëè, ÿêi îïèñóþòü öþ çàëåæíiñòü â äiàïàçîíi åíåðãié ãàììà-êâàíòiâ âiä 30 êå äî 3 ÌåÂ. Ïðîïîíó¹òüñÿ ìåòîä âèçíà÷åííÿ ïàðàìåòðiâ ïiäãîíêè äëÿ íàáëèæåíèõ ôîðìóë çà ñïåê- òðàìè ãàììà-âèïðîìiíþâàííÿ, ÿêi åêñïåðèìåíòàëüíî âèìiðÿíi çà äîïîìîãîþ äåêiëüêîõ ñòàíäàðòíèõ äæåðåë âèïðîìiíþâàííÿ. Çîêðåìà, öå ìîæóòü áóòè äæåðåëà ãàììà-âèïðîìiíþâàííÿ 241Am, 137Cs òà 60Co. Îáãîâîðþþòüñÿ òàêîæ âèìiðþâàííÿ ç äîäàòêîâèìè äæåðåëàìè âèïðîìiíþâàíü, ÿêi ìîæóòü áóòè âèêîðèñòàíi äëÿ ïîëiïøåííÿ òî÷íîñòi âiäíîâëåííÿ åíåðãåòè÷íî¨ çàëåæíîñòi ÷óòëèâîñòi äåòåêòîðiâ. 183