Studying electro-physical characteristics of detecting elements on the ohmic side of silicon microstrip detector
The results of studying the ohmic side of the double-sided microstrip detectors (DSMD) possessing the diode separating p⁺ stop structure of different type and size are presented. The effect of the p⁺ stop structure on the DSMD interstrip resistance and interstrip capacitance is considered.
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| Datum: | 2005 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2005
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| Schriftenreihe: | Вопросы атомной науки и техники |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/81227 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Studying electro-physical characteristics of detecting elements on the ohmic side of silicon microstrip detector / N.I. Maslov, S.M. Potin, A.F. Starodubtsev // Вопросы атомной науки и техники. — 2005. — № 6. — С. 50-53. — Бібліогр.: 17 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The results of studying the ohmic side of the double-sided microstrip detectors (DSMD) possessing the diode
separating p⁺ stop structure of different type and size are presented. The effect of the p⁺ stop structure on the DSMD
interstrip resistance and interstrip capacitance is considered. |
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