About peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields
The peculiarities of self-bias voltage formation in plasma-chemical reactors (PCR) with controlled magnetic fields have been investigated. The dependences of self-bias voltages on the values and configurations of magnetic fields in PCR, as well as, on the pressures, gas flows, discharge currents, di...
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Institute for Nuclear Research of NASU
2015
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irk-123456789-821182016-04-14T11:10:59Z About peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields Hladkovskiy, V.V. Fedorovich, O.A. Polozov, B.P. Kruglenko, M.P. Низкотемпературная плазма и плазменные технологии The peculiarities of self-bias voltage formation in plasma-chemical reactors (PCR) with controlled magnetic fields have been investigated. The dependences of self-bias voltages on the values and configurations of magnetic fields in PCR, as well as, on the pressures, gas flows, discharge currents, discharge RF voltage drops are obtained. Экспериментально исследованы особенности образования напряжения автосмещения в плазмохимических реакторах (ПХР) с управляемыми магнитными полями. Получены зависимости напряжений автосмещения от величин и конфигураций магнитных полей в ПХР, а также от давлений, расходов газов, токов в разрядах, падений ВЧ-напряжений на разрядах. Експериментально досліджені особливості утворення напруги автозміщення в плазмохімічних реакторах (ПХР) з керованими магнітними полями. Отримано залежності напруги автозміщення від величин і конфігурацій магнітних полів в ПХР, а також від тисків, витрат газів, струмів у розрядах, падінь ВЧ-напруг на розрядах. 2015 Article About peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields / V.V. Hladkovskiy, О.A. Fedorovich, B.P. Polozov, M.P. Kruglenko // Вопросы атомной науки и техники. — 2015. — № 1. — С. 156-160. — Бібліогр.: 6 назв. — англ. 1562-6016 PACS: 52.77.Bn, 81.65.Cf http://dspace.nbuv.gov.ua/handle/123456789/82118 en Вопросы атомной науки и техники Institute for Nuclear Research of NASU |
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Низкотемпературная плазма и плазменные технологии Низкотемпературная плазма и плазменные технологии |
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Низкотемпературная плазма и плазменные технологии Низкотемпературная плазма и плазменные технологии Hladkovskiy, V.V. Fedorovich, O.A. Polozov, B.P. Kruglenko, M.P. About peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields Вопросы атомной науки и техники |
| description |
The peculiarities of self-bias voltage formation in plasma-chemical reactors (PCR) with controlled magnetic fields have been investigated. The dependences of self-bias voltages on the values and configurations of magnetic fields in PCR, as well as, on the pressures, gas flows, discharge currents, discharge RF voltage drops are obtained. |
| format |
Article |
| author |
Hladkovskiy, V.V. Fedorovich, O.A. Polozov, B.P. Kruglenko, M.P. |
| author_facet |
Hladkovskiy, V.V. Fedorovich, O.A. Polozov, B.P. Kruglenko, M.P. |
| author_sort |
Hladkovskiy, V.V. |
| title |
About peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields |
| title_short |
About peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields |
| title_full |
About peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields |
| title_fullStr |
About peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields |
| title_full_unstemmed |
About peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields |
| title_sort |
about peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields |
| publisher |
Institute for Nuclear Research of NASU |
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2015 |
| topic_facet |
Низкотемпературная плазма и плазменные технологии |
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http://dspace.nbuv.gov.ua/handle/123456789/82118 |
| citation_txt |
About peculiarities of self-bias voltage formation in plasma-chemical reactors with controlled magnetic fields / V.V. Hladkovskiy, О.A. Fedorovich, B.P. Polozov, M.P. Kruglenko // Вопросы атомной науки и техники. — 2015. — № 1. — С. 156-160. — Бібліогр.: 6 назв. — англ. |
| series |
Вопросы атомной науки и техники |
| work_keys_str_mv |
AT hladkovskiyvv aboutpeculiaritiesofselfbiasvoltageformationinplasmachemicalreactorswithcontrolledmagneticfields AT fedorovichoa aboutpeculiaritiesofselfbiasvoltageformationinplasmachemicalreactorswithcontrolledmagneticfields AT polozovbp aboutpeculiaritiesofselfbiasvoltageformationinplasmachemicalreactorswithcontrolledmagneticfields AT kruglenkomp aboutpeculiaritiesofselfbiasvoltageformationinplasmachemicalreactorswithcontrolledmagneticfields |
| first_indexed |
2025-07-06T08:17:10Z |
| last_indexed |
2025-07-06T08:17:10Z |
| _version_ |
1836884778146594816 |
| fulltext |
LOW TEMPERATURE PLASMA AND PLASMA TECHNOLOGIES
ISSN 1562-6016. ВАНТ. 2015. №1(95)
156 PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2015, № 1. Series: Plasma Physics (21), p. 156-160.
ABOUT PECULIARITIES OF SELF-BIAS VOLTAGE FORMATION IN PLASMA-
CHEMICAL REACTORS WITH CONTROLLED MAGNETIC FIELDS
V.V. Hladkovskiy, О.А. Fedorovich, B.P. Polozov, M.P. Kruglenko
Institute for Nuclear Research of NASU, Kiev, Ukraine
E-mail: oafedorovich@kinr.kiev.ua
The peculiarities of self-bias voltage formation in plasma-chemical reactors (PCR) with controlled magnetic
fields have been investigated. The dependences of self-bias voltages on the values and configurations of magnetic
fields in PCR, as well as, on the pressures, gas flows, discharge currents, discharge RF voltage drops are obtained.
PACS: 52.77.Bn, 81.65.Cf
INTRODUCTION
During recent decades plasma-chemical technologies
find expanding applications in engineering and industry.
Plasma-chemical etching is successfully applied in the
technological processes in manufacturing of power
devices, products of microelectronics, micromechanics,
computer engineering, microwave techniques, etc. [1].
However, the processes, taking place in plasma-chemical
reactors, are insufficiently studied. This is primarily due
to the complexity of diagnostic of phenomena which
occur in the chemically active multi-component plasma.
In particular, when we investigating the plasma optical
spectra, in most cases it has been succeeded to identify
only the most intense lines belonging to the excited atoms
[2]. Discharges in the chemically active plasma often can
cause chemical reactions, which are not specific for
normal chemical processes. Therefore, the optical spectra
of molecules formed in these processes are absent in
existing tables of molecular spectra/ For example, in the
process of silicon etching in the fluorine-containing
plasma (SF6) the molecules such as SF5, SF4, SF3, SF3О,
SF2О2, SF2О, SFО etc. are formed [2]. The problems of
electron- and ion stimulation effect on the silicon etching
rate, as well as, the influence of stimulating particles on
the etching rate of different materials are little-studied.
There is a lack of information in the literature on the self-
bias voltage (Ubias) depending both on the basic
parameters of the reactive plasma produced in the
plasma-chemical reactor and the influence on it of
configurations and magnetic fields. At the same time, the
constant component of Ubias is approximately equal to the
alternating voltage amplitude and, practically, determines
the average energy of ions bombarding the target [3, 4].
A purpose of the present paper is to study the
influence of controlled magnetic field configurations
and different discharge parameters and conditions on
the self-bias voltage in plasma-chemical reactors (PCR).
1. EXPERIMENTAL
The self-bias voltage is a direct-current voltage
arising in the case of the RF discharge between the
active and grounded electrode. It occurs because of
different mobility (diffusion rate) of electrons and ions
in the plasma of high-frequency discharges in the
controlled magnetic fields and different electrode areas.
Under specific conditions and intensity values of
magnetic fields and their configurations it is possible to
magnetize electrons and thus to decrease significantly
the velocity of electron transfer from a central electrode
to an outer electrode in the constant electric field,
created by the RF discharge between two electrodes,
having different areas. In other cases, vice versa, the
velocity of electron transfer to the outer (grounded)
electrode can be increased by applying a divergent
magnetic field and therewith increasing the self-bias
voltage. Application of low magnetic fields permits to
magnetize only electrons, not ions, [5]. Therefore, we
will consider the controlled magnetic field effect on the
electrons only. Investigations were carried out with the
use of the devices described in [2, 6].
Fig. 1 .Silicon etching rate as a function of the self-bias
voltage
As is shown in the silicon etching rate has a
maximum and decreases with negative voltage
increasing to above 250 V under the same other
discharge conditions (Fig. 1). Under discharge
conditions described in the change of self-bias voltage
was performed by controlling the lower coil current
with a constant current in the middle magnetic field coil.
However, there is an ambiguity since the etching rate
also changes with magnetic field intensity changing. In
this connection it is necessary to know how other
discharge parameters influence on the self-bias voltage.
Let us consider the mechanisms of formation,
magnitude and polarity of the self-bias voltage
depending on the plasma-chemical reactor design,
magnetic field value and configuration, discharge
parameters in the plasma-chemical reactors.
In the plasma-chemical reactors, where the
chemically active plasma is excited without magnetic
field, the negative self-bias voltage increases
proportionally to the difference of areas of the active
and grounded electrodes. According to ref. [3] in the
case of RF discharges the constant component of Ubias is
approximately equal to the alternating voltage amplitude
and, practically, determines the average energy of ions
mailto:oafedorovich@kinr.kiev.ua
ISSN 1562-6016. ВАНТ. 2015. №1(95) 157
bombarding the target. However, in every concrete
reactor the self-bias voltage increases with discharge
current increase and can vary depending on the pressure
value in the reactor, kind of gas and components of
working gas mixture. Besides, by reducing the area of
the grounded electrode, to the size smaller than that of
the active electrode, it is possible to obtain on it a
positive bias as, for example, in the devices of 08ПХТ-
100/10-006 type, which were widely applied in the
electron industry enterprises. In such devices the
plasma-chemical etching was electron-stimulated but,
the polymer films, formed during etching the process
layers of microelectronics products, were deposited.
Then the etching rate was sharply decreasing that leaded
to a significant etching inhomogeneity. In plasma-
chemical reactors, developed in the Institute for Nuclear
Research of NASU, the areas of active electrodes were,
generally, smaller than these of grounded electrodes.
Therefore a negative self-bias took place on the active
electrodes that leaded to the ion stimulation in the
process of material etching.
Let us consider how the self-bias voltage is changing
with the use of a short trihedral prism as an active
electrode of (110 х 120) mm
2
. This variant of PCRs was
used to reach high values of self-bias voltage and to
clean the surface of materials being applied in
microelectronics [10]. The length of the outer grounded
electrode was 450 mm with the outer cylinder of
200 mm in diameter. Fig. 2 (curve 1) represents the self-
bias voltage as a function of the working gas (sulfur
hexafluoride SF6) pressure in the PCR under RF
discharge (13.56 MHz) without magnetic field. The
volume of gas charged in the reactor was constant and
controlled by the oil flow meter, and the pressure in the
discharge chamber was controlled by measuring the
pumping speed. The RF oscillator power was also
constant (1 kW). By increasing the pressure in the
reactor from 10
-2
to 10
-1
Torr, without magnetic field,
the negative self-bias was decreased from -640 to
-290 V. However, in this case the discharge current
sharply was decreased from 15 A to 11.5 A (Fig. 3,
curve 1) and almost stabilized at a defined level (11.5)
with pressure changing from 4·10
-2
to 1 10
-1
Torr. So,
the curve in Fig. 2, representing the self-bias voltage as
a function of the pressure in the PCR, is ambiguous.
The self-bias voltage and, consequently, the ion
energy can be controlled using the controlled magnetic
fields and changing their configuration. By including
the magnetic field of 40·10
2
А/m and increasing the
pressure from 10
-2
to10
-1
Torr the self-bias voltage
decreases from -600 to -130 V (see Fig. 2, curve 2). The
discharge current decreases from 14.5 to 11.5 A under
pressure of 4 10
-2
Torr, then it becomes stabilized at this
level to 8 10
-2
Тоrr and again sharply decreases to 10 A
under pressure of 10
-1
Тоrr. All this evidences on the
lowering of the degree of plasma ionization and,
respectively, on the plasma volume resistance
increasing (see Fig. 3, curve 2).
The magnetic field increase to 80·10
2
А/m leads to
another result. The self-bias voltage is practically
constant (at a level of 220 V) during pressure increasing
(see Fig. 2, curve 3). And the current increases from 9 to
10 A Torr with pressure changing from 10
-2
Torr to
5 10
-2
Torr, and after became stabilized (see Fig. 2,
curve 3).
Fig. 2. Self-bias voltage as a function of the pressure
(1 – magnetic field intensity (1 – Н = 0 А/m;
2 – Н = 40·10
2
А/m; 3 – Н = 80·10
2
А/m)
Fig. 3. Discharge current as a function of pressure
(1 – Н = 0 А/m; 2 – Н = 40·10
2
А/m;
3 – Н = 80·10
2
А/m)
In the self-bias voltage has been measured as a
function of the discharge RF voltage drop under
different argon pressures in the reactor that corresponds
to the discharge current increase. However, it should be
noted, that any appreciable dependence of the constant
self-bias voltage in the discharge without magnetic field
on the pressure changing from 1.6 to 500 mTorr is not
observed. The curves obtained in for three values of gas
pressure in the discharge are almost equal and linear. To
a first approximation they obey to the law noted in [3].
The constant component (self-bias voltage) Ubias is
approximately equal to the alternating voltage amplitude
and, practically, determines the average energy of ions
bombarding the target [3].
Configurations and values of magnetic fields used in
[3] were changed within wide ranges. Fig. 4 shows
several variants of magnetic field configurations and
different distributions of magnetic field values measured
along the active electrode. Fig. 4,a shows the
dependence of the magnetic field intensity at the prism
face for one of modifications of the PCR manufactured
by request of the MSRIRM (Minsk, Belarus). When the
current in the coil is changing from 0 to 4.5 A the
magnetic field intensity increases from 0 to 88·10
3
А/m.
And in the case of the discharge current equal to 6 A the
self-bias voltage decreases to 0 V at the magnetic field
intensity of 80·10
3
А/m.
Figs. 4,b-c represents different variants of magnetic
field configurations and distributions along the working
surface of the prism on which the samples to be plasma
treated were installed depending on the posed tasks:
from soft etching without radiation damage to sputtering
of different materials.
158 ISSN 1562-6016. ВАНТ. 2015. №1(95)
Fig. 4,a. Magnetic field intensity as a function of the
current in the coil (Ø340 mm)
b
c
Fig. 4. b-c. Magnetic field intensity distribution
along the PCR length
Fig. 5 represents the self-bias voltage as a function
of the current value in the lower coil at a constant
current of 2 A (Н = 80·10
2
А/m) in the upper coil. It was
possible to control the self-bias voltage from -120 V
(without a current in the lower coil) to -300 V.
In this case the current in the lower coil was
increased 7 A and was connected in antiphase with the
current in the primary coil. Figs. 5, 6 show the change
of Ubias in the argon plasma depending on the polarity
and value of the current in the lower and upper coils
(the current in the middle coil, argon pressure and
discharge current being constant). Here the self-bias
value is changing from 100 V in the case of in-phase
connection of coils, and to -160 V in the case of
antiphase connection of coils.
а
b
Fig 5. а – self-bias voltage as a function of the
current in the lower coil; b – self-bias voltage as a
function of current direction in the coil
Fig. 6 (curve 1) shows the self-bias voltage (Ubias) as
a function of the discharge current value in the CCl4 +
Ar plasma with the constant magnetic field of
40·10
2
А/m. As the discharge current increases from 3 to
10 A, the self-bias voltage is changing from -80 to -220 V.
The connection of an additional 440 kHz oscillator
under the same conditions permitted to increase sharply
the negative self-bias voltage from -280 to -380 V (with
a current of 4 A from the additional oscillator) (see
Fig. 6, curve 2). To increase Ubias for the attainment of
sputtering, the additional oscillator of a 440 kHz
frequency and controlled power to 4 kW was connected.
Thus, it has been succeeded to increase the self-bias
voltage from -20 to -1000 V and more.
Fig. 6. Self-bias voltage as a function of the discharge
current (1 – without additional oscillator; 2 – with
additional oscillator, of 440 kHz frequency)
ISSN 1562-6016. ВАНТ. 2015. №1(95) 159
Using the additional oscillator it is possible to
sputter not only the metals and semiconductors with a
relatively good conductivity but, also, dielectrics such
as lithium tantalate LiTaO3, strontium tantalate TiSrO3
etc., having the chemical bond of about 9.5 eV.
Semiconductors having a low conductivity, e.g.
gallium arsenide, gallium phosphide and nonconducting
ceramics, also are well-sputtered materials. This is due
to more intense escaping onto the grounded electrode of
electrons being under a longer action of a comparatively
low-frequency voltage of 440 Hz. At such frequencies
the ions are simultaneously exposed to the action of the
field which is longer by a factor of 31 as compared to
the action of the RF field having a frequency of
13.56 MHz. During comparatively long time of the field
action on the ions they have time to displace in the
space between the active and grounded electrodes and to
remove the negative surface charge from dielectrics and
low-conducting semiconductors. There still more is the
influence of such a field on the electrons which have
time to get the central (active) electrode and to
compensate a positive charge which appears on the
surface of the sample being treated. Due to this effect
the etching rate of dielectrics, semiconductors and metal
films can be increased.
Practically, the linear increase of the self-bias
voltage (other parameters being constant) is observed
when in the SF6 gas a high-frequency discharge occurs
with discharge current increasing (Fig. 7). In the case of
discharge current increasing from 6 to 14 A the self-bias
voltage increases from -110 to -240 V.
The magnetic field intensity increase from 0 to
12·10
3
А/m (other conditions in the discharge being
constant) leads to the self-bias decrease from 270 to
120 V (Fig. 8). According to the investigation results,
the magnetic field increase to 80·10
3
А/m decreases the
self-bias voltage to 0. This is because the complete
“freezing” of electrons stops their diffusion onto the
large surface area of the outer grounded electrode. And
this effect is a main one: it means that the electron
diffusion in the magnetic field can be controlled.
Fig. 7. Self-bias voltage as a function of the discharge
current
It is possible to decrease, as well as, to increase the
electron diffusion rate, depending on the magnetic field
intensity and configuration, and thereby to control the
self-bias voltage and, consequently, the average energy
of chemically active ions. Simultaneously with
magnetic field intensity increasing, in the case of a
“mirror” magnetic field configuration, the time of
electron existence in the plasma volume also increases
that leads to the increase of the degree of dissociation
and ionization of the chemically active plasma. This is
explained by the fact that electrons move in the spiral
orbits along the magnetic field and have time to gain
much energy before escaping from the plasma volume.
Thus the content of chemically active radicals and ions
in the plasma-chemical reactor increases, and,
consequently, the sample etching rate increases too.
And, vice versa, the rapid electron escape onto the
grounded electrode increases the self-bias voltage, but
decreases the material etching rate.
Fig.8. Self-bias voltage as a function of the magnetic
field
When the working gas flow rate increases from 4 to
19 l/h, with the discharge current of 8 A, pressure in the
chamber of 0.05 Torr, magnetic field intensity of
12·10
3
А/m and with the discharge in the SF6 gas, the
self-bias voltage first (to 8 l/h) decreases from -100 to
-60 V and then becomes almost stabilized (Fig. 9).
This indicates on the inefficiency of the use of high
gas flow rates, on the unreasonable discharge into the
atmosphere of a considerable amount of unused
chemically active gases and on the rise in cost of their
utilization.
Fig. 9. Self-bias voltage as a function of the gas flow in
the discharge
Fig. 10. Self-bias voltage as a function of the
working gas pressure in the PCR
160 ISSN 1562-6016. ВАНТ. 2015. №1(95)
Results of investigations on the dependence of self-
bias voltage on the pressure in the discharge chamber
are given in Fig.10. The pressure increase by two orders
of magnitude from 2·10
-3
to 8·10
-2
Torr (other
parameters in the discharge chamber being constant)
leads first to the insignificant increase of the self-bias
voltage from -60 to -80 V and then to the sharp decrease
to -60 V. The effect observed can be related with the
electron mean free path decrease caused by the pressure
increase in the chamber. Because of electron-atom
collisions the electrons can not gain the energy
sufficient for ionization and dissociation of working gas
atoms and molecules. As a result, the degree of
ionization and dissociation in the PCR decreases. Thus
the concentration of free electrons decreases and the
number of electrons coming onto the grounded chamber
walls decreases too. The pressure in the chamber was
varying by closing softly the diffusion pump valve
without changing the working gas flow rates.
Fig. 11 shows the self-bias voltage as a function of
the discharge voltage drop value. The discharge was
performed in the SF6 gas under pressure of 5·10
-2
Torr.
The self-bias voltage increases approximately linearly
with discharge voltage drop decreasing but at the angle
of slope ~ 60 , not near 45 . This points to the fact that
there are exiting other mechanisms of self-bias voltage
formation, since, according to [3], in the cases of RF
discharges without magnetic field the constant
component of Ubias is approximately equal to the
alternating voltage amplitude.
Fig. 11. Self-bias voltage as a function of the RF
discharge voltage drop
In the presence of magnetic fields Ubias = ~100 V at
the RF voltage pressure of ~ 180 V. This is evidence of
a significant magnetic field influence on the electron
diffusion and, consequently, on the self-bias voltage
value. Besides, both the magnetic field values and their
configurations exert influence on the self-bias voltage
values.
CONCLUSIONS
The self-bias voltage caused by the RF discharges in
controlled magnetic fields, with other discharge
parameters being constant, depends of both the
intensities of magnetic fields and their configurations.
By changing the configuration and intensity of magnetic
fields it is possible to control the self-bias voltage from
0 to 1000 V. The connection to the discharge of the
additional oscillator with frequencies of 50 to 500 kHz
also exerts significant influence on the self-bias voltage
values.
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high-frequency discharge in a controlled magnetic fields
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3. O.D. Parfenov. Technology chipset. M.: “Visshaya
shkola”, 1986, p. 218 (in Russian)
4. Е.G. Shustin, N.G. Isaev, M.P. Тemiryazeva, et al.
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5. D.A. Frank-Kamenetskii. Lectures on Plasma
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6. O.A Fedorovich, M.P Kruglenko, B.P. Polozov.
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Article received 23.10.2014
ОБ ОСОБЕННОСТЯХ ОБРАЗОВАНИЯ НАПРЯЖЕНИЯ АВТОСМЕЩЕНИЯ
В ПЛАЗМОХИМИЧЕСКИХ РЕАКТОРАХ С УПРАВЛЯЕМЫМИ МАГНИТНЫМИ ПОЛЯМИ
В.В. Гладковский, О.А. Федорович, Б.П. Полозов, М.П. Кругленко
Экспериментально исследованы особенности образования напряжения автосмещения в
плазмохимических реакторах (ПХР) с управляемыми магнитными полями. Получены зависимости
напряжений автосмещения от величин и конфигураций магнитных полей в ПХР, а также от давлений,
расходов газов, токов в разрядах, падений ВЧ-напряжений на разрядах.
ПРО ОСОБЛИВОСТІ УТВОРЕННЯ НАПРУГИ АВТОЗМІЩЕННЯ В ПЛАЗМОХІМІЧНИХ
РЕАКТОРАХ З КЕРОВАНИМИ МАГНІТНИМИ ПОЛЯМИ
В.В. Гладковський, О.А. Федорович, Б.П. Полозов, М.П. Кругленко
Експериментально досліджені особливості утворення напруги автозміщення в плазмохімічних реакторах
(ПХР) з керованими магнітними полями. Отримано залежності напруги автозміщення від величин і
конфігурацій магнітних полів в ПХР, а також від тисків, витрат газів, струмів у розрядах, падінь ВЧ-напруг
на розрядах.
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