Control complex for a double-sided microstrip detector production and tests
The controlling system for detector silicon and for a double-sided microstrip detectors (DSMD) characteristics tests is described.
Збережено в:
| Дата: | 2000 |
|---|---|
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2000
|
| Назва видання: | Вопросы атомной науки и техники |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/82268 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Control complex for a double-sided microstrip detector production and tests / A.A. Kaplij, V.I. Kulibaba, P. Kuijer, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, A.F. Starodubtsev // Вопросы атомной науки и техники. — 2000. — № 2. — С. 41-45. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-82268 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-822682015-05-28T03:01:52Z Control complex for a double-sided microstrip detector production and tests Kaplij, A.A. Kulibaba, V.I. Kuijer, P. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Starodubtsev, A.F. Еxperimental methods The controlling system for detector silicon and for a double-sided microstrip detectors (DSMD) characteristics tests is described. 2000 Article Control complex for a double-sided microstrip detector production and tests / A.A. Kaplij, V.I. Kulibaba, P. Kuijer, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, A.F. Starodubtsev // Вопросы атомной науки и техники. — 2000. — № 2. — С. 41-45. — Бібліогр.: 5 назв. — англ. 1562-6016 PACS: 29.40.Wk http://dspace.nbuv.gov.ua/handle/123456789/82268 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Еxperimental methods Еxperimental methods |
| spellingShingle |
Еxperimental methods Еxperimental methods Kaplij, A.A. Kulibaba, V.I. Kuijer, P. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Starodubtsev, A.F. Control complex for a double-sided microstrip detector production and tests Вопросы атомной науки и техники |
| description |
The controlling system for detector silicon and for a double-sided microstrip detectors (DSMD) characteristics tests is described. |
| format |
Article |
| author |
Kaplij, A.A. Kulibaba, V.I. Kuijer, P. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Starodubtsev, A.F. |
| author_facet |
Kaplij, A.A. Kulibaba, V.I. Kuijer, P. Maslov, N.I. Ovchinnik, V.D. Potin, S.M. Starodubtsev, A.F. |
| author_sort |
Kaplij, A.A. |
| title |
Control complex for a double-sided microstrip detector production and tests |
| title_short |
Control complex for a double-sided microstrip detector production and tests |
| title_full |
Control complex for a double-sided microstrip detector production and tests |
| title_fullStr |
Control complex for a double-sided microstrip detector production and tests |
| title_full_unstemmed |
Control complex for a double-sided microstrip detector production and tests |
| title_sort |
control complex for a double-sided microstrip detector production and tests |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| publishDate |
2000 |
| topic_facet |
Еxperimental methods |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/82268 |
| citation_txt |
Control complex for a double-sided microstrip detector production and tests / A.A. Kaplij, V.I. Kulibaba, P. Kuijer, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, A.F. Starodubtsev // Вопросы атомной науки и техники. — 2000. — № 2. — С. 41-45. — Бібліогр.: 5 назв. — англ. |
| series |
Вопросы атомной науки и техники |
| work_keys_str_mv |
AT kaplijaa controlcomplexforadoublesidedmicrostripdetectorproductionandtests AT kulibabavi controlcomplexforadoublesidedmicrostripdetectorproductionandtests AT kuijerp controlcomplexforadoublesidedmicrostripdetectorproductionandtests AT maslovni controlcomplexforadoublesidedmicrostripdetectorproductionandtests AT ovchinnikvd controlcomplexforadoublesidedmicrostripdetectorproductionandtests AT potinsm controlcomplexforadoublesidedmicrostripdetectorproductionandtests AT starodubtsevaf controlcomplexforadoublesidedmicrostripdetectorproductionandtests |
| first_indexed |
2025-07-06T08:46:19Z |
| last_indexed |
2025-07-06T08:46:19Z |
| _version_ |
1836886610191319040 |
| fulltext |
CONTROL COMPLEX FOR A DOUBLE-SIDED MICROSTRIP
DETECTOR PRODUCTION AND TESTS
A.A. Kaplij, V.I. Kulibaba, N.I. Maslov*, V.D. Ovchinnik, S.M. Potin, A.F. Starodubtsev
National Science Center “Kharkov Institute of Physics and Technology”, Kharkov, Ukraine
NSC
P. Kuijer
Utrecht University, The Netherlands
The controlling system for detector silicon and for a double-sided microstrip detectors (DSMD) characteristics
tests is described.
PACS: 29.40.Wk
1. INTRODUCTION
Quality control is the main point for all steps of a
microstrip detector design and production. To increase
the detector production efficiency control is started from
detector silicon characteristics test and it is finished by
total control of the good strips yield [1].
2. MEASUREMENTS OF DETECTOR Si
CHARACTERISTICS BEFORE AN INGOTS
CUTTING
2.1. MEASURING EFFECTIVE LIFETIME OF
NONEQUILIBRIUM CHARGE CARRIERS IN
SEMICONDUCTOR INGOTS
The technique is used for measuring the distribution
nonuniformity of the effective lifetime of
nonequilibrium charge carriers (τNCC) within the
semiconductor volume, appearing because of defects
and technological peculiarities of producing
semiconductor materials.
The effective lifetime τNCC is measured according to
the microwave-cavity photo-modulation technique. The
technique is based on analyzing the photoresponse
elaxation of the semiconductor under study for a pulsed
excitation of the photoconductance.
During the measurement process a semiconductor
sample is positioned on the cavity inside which
microwave oscillations are excited (Fig. 1). The sample
is irradiated with the amplitude-modulated light whose
wavelength lies within the range of intrinsic
photoconductance of the semiconductor material. The
irradiation generates electron-hole pairs in the
semiconductor. After the termination of the light pulse
the recombination of nonequilibrium charge carriers sets
in. The variation of the semiconductor conductivity
induces the variation of the cavity quality factor and,
consequently, varies the level of the power passing
through it. Kinetics of such a variation corresponds to
the kinetics of photoconductance. At the output of the
measuring instrument a photoresponse signal U is
formed and the duration of the signal front drop (equal
to the effective τNCC in the sample under study) to the
level U/e is measured.
_____________
* Corresponding author: e-mail: nikolai.maslov @kipt.kharkov.ua
At the Kharkov State Technical University of Radio
Electronics a measuring device in the form of two units
in separate casings has been manufactured (one for
measuring wafers and another one for measuring
ingots).
The tuning of the measurement regime (at the
resonance) is performed manually. The results of
measurements are displayed on a digital screen.
The device measures the effective τNCC in wafers and
ingots within the range 10-2000 µs to ±10% accuracy.
The range of resistivity values of silicon under study is
0.5-200 kW×cm.
The process of measurements does not require
establishing the electric contact with the semiconductor
enabling one to avoid special preparation of the
sample’s surface. The technique makes it possible to
perform routine measurements of the τNCC distribution
inside the samples of high resistance detector silicon for
monitoring ingots before cutting.
Fig. 1. Scheme for measuring τNCC: 1 − the cavity; 2
− the measuring device; 3 − the semiconductor sample;
4 − photodiode; 5 − the oscilloscope.
2.2. MEASURING THE RESISTIVITY OF HIGH
RESISTANCE SILICON
The main objective is to determine the resistivity (ρ)
distribution of high resistance detector silicon in ingots.
ВОПРОСЫ АТОМНОЙ НАУКИ И ТЕХНИКИ. 2000, №2.
Серия: Ядерно-физические исследования (36), с. 41-45.
41
mailto:nikolai.maslov@kipt.kharkov.ua
The measurements are based on a four-probe technique
of determining the resistivity of semiconductors [2, 3].
A probe head with four aligned probes with a pitch of
S= 0.167 cm is used. The probes are pressed to the
semiconductor surface (Fig. 2). A high voltage U1-4 is
applied across the outermost probes. As a result a
current I passes through the semiconductor sample. A
potential difference U2-3 is measured across the
innermost probes. The probe head and a semiconductor
sample are placed inside an opaque box. The
semiconductor sample is put on a non-conducting table
movable along two horizontal axes. The probe head
moves along the vertical axis.
The resistivity of the semiconductor (ρ) is
determined from the expression:
ISUr /2 32−= π
Fig. 2. Scheme for measuring the resistivity of a
semiconductor sample: 1 - the opaque box; 2 - the
probe head; 3 – the semiconductor sample; 4 - the non-
conducting table; 5 - the power supply; 6 - the
voltmeter.
For increasing the accuracy of measurements a
number of conditions are provided:
before the measurements the surface of the ingot
is made free of impurities and partially of the oxide
layer;
the voltage U1–4 helps to break down the residue
of the oxide layer;
the internal resistance of the measuring device is
≈109 W making the leak currents through potential
electrodes negligible;
the current in the ingot does not exceed 2 µA to
prevent heating the silicon volumes being measured;
varying polarity of the voltage U1–4 enables one to
restrict the influence of contact phenomena on the result
of measurements;
in order to minimize noise, an autonomous power
supply based on galvanic batteries is used.
The technique designed enables one to make routine
measurements of detector silicon for monitoring the
resistivity distribution of ingots before cutting.
3. TECHNIQUES FOR STATIC
CHARACTERISTICS INVESTIGATION OF
A DSMD
3.1. PROBE STATION
The station is used to measure the static
characteristics of microstrip detectors, photo-diodes and
other test structures implanted on a 3- or 4-inch
diameter wafer. One can measure the following
characteristics:
current-voltage dependencies of leak currents;
capacitance and breakdown voltage of capacitors;
resistance of resistors;
inter-strip capacitance and resistance.
The measuring station consists of:
the opaque box;
microscope;
coordinate table;
precise-positioned probes;
lifting platform for precise-positioned probes;
a set of measuring instruments;
mechanical adapter for the measurements of
characteristics of DSMD and double-sided test
structures on a silicon plate.
3.1.1. The microscope is located on a movable
chariot that may be displaced with screws in horizontal
directions: 100 mm in one direction and 40 mm in
another one.
3.1.2. The coordinate table moves in two directions
over 100 mm in the horizontal plane. A chuck with a
vacuum lock for a silicon plate is mounted on the table.
This chuck may be rotated through 360° around its axis
and fixed with a stop-screw.
3.1.3. The precise-positioned probe is a device with
four degrees of freedom aimed at providing a reliable
electric contact between the contact needle and the
contact area on the silicon wafer. The device can move
the needle, fixed a rod ~100 mm long, around the
vertical axis as well as along straight lines in three
mutually orthogonal directions. The rotation is rough
and it serves for a preliminary positioning of the needle
in front of the contact area or for moving this needle
away on readjusting.
Rotation may be made within 360°. The linear
displacements are smooth and precise and they provide
the contact of the needle with area less than 50×50 µm2.
The horizontal displacements are within 15 mm, and the
vertical ones are within 10 mm. The probe is fixed at the
platform with a special support possessing a "dove-tail"
lock. On this support the probe is displaced in one
horizontal direction within 40mm and fixed with a
special spring-clamp.
3.1.4. The lifting platform is a solid plate with
enough space for 1 to 6 precise-positioned probes on
their supports. The platform together with probes may
be displaced smoothly by a lever in the vertical
direction over a distance up to 5 mm. The lever is
equipped with a brake to exclude the self-lowering of
the platform.
3.1.5. All mechanisms of the measuring station are
mounted on a solid steel platform inside the opaque box.
This decreases the amplitudes of possible vibrations and
makes the design sufficiently rigid. On installing the
42
plate inside an opaque box, porous resin spacers are
placed under the plate for reducing vibrations.
The opaque box cover is removable and balanced
with a weight suspended on the line going over the
castor. This decreases shocks accompanying opening
and closing the box.
3.2. MECHANICAL ADAPTER
The adapter is used for providing the measurements
of characteristics of double-side detectors and test
structures on a silicon wafer before its cutting. The
adapter possesses two inner (own) precise-positioned
probes providing the displacement of contacting needles
to any point on the semi-circle 100 mm in diameter
located in the horizontal plane (Fig. 3). By design the
pro(Fig. 1)bes are on chariots displaced in two
horizontal directions with the help of a pair of screw.
On the chariot a rotatable circle is mounted so that with
the help of a worm gear we may rotate the needle-
holding rod through any angle in a horizontal plane to
provide a rough positioning of the needle close to the
required one. Via linear displacements of the chariot the
needle is displaced precisely to the required contact
area. The device provides for smooth and precise
lowering or lifting of the needle. This motion is
performed ~3 mm above the plate surface.
The silicon wafer is positioned in a special seat
consisting of two dielectric rings one of which is rigidly
fixed in a basic frame of the adapter and another one is
free serving for pressing the silicon plate to the first
ring. Six pressing springs are located over the
circumference of the metallic ring fixed to the basic
frame with two clamps. The clamps are of a "slot-
washer" type enabling the quick removal and
installation of this ring when the silicon wafer is
changed for another one. The silicon plate is installed
from the side opposite to the needle holders. From this
side the total area of the plate is accessible for
establishing contacts with external probes with precise
positioning.
Fig. 3. The mechanical adapter for static
characteristics measurements of double-sided
microstrip detectors. 1- two microposition probes; 2, 3-
the control handles of the probes.
The adapter described above is made in two
modifications regarding its installation into the static
probe station. The first modification concerns the way
in which the adapter is installed on the chuck of the
coordinate table and fixed with special screws. The
contacts with internal probes may be made under the
microscope of the measuring station as well as under
another similar microscope.
This compact adapter may be used as separated
equipment for simplified measurements of
characteristics of a double-sided microstrip detector for
example at production (Fig. 4). However, during
installation of the adapter into the static probe station,
the contact may be broken due to unavoidable shocks.
Fig. 4. The overturned adapter and separated
microposition probe (4) prepared for simplified
measurements of a double-sided microstrip detector
characteristics.
The second modification (Fig. 5)concerns the way
for a steady installation of the adapter on the coordinate
table of the static probe station instead of the chuck. The
adapter is turned over in special cone bearings without
removing it from the coordinate table. The operation
with external and internal probes is accomplished under
the microscope of the measuring station.
Fig. 5. The second modification of the mechanical
adapter for conditions of static probe stations using.
The adapter is fixed with a special screw in two
horizontal positions. This provides a stable state of the
43
adapter for measuring and frees the device of
unnecessary shocks.
The contact needles of internal probes of the adapter
are removed in the absence of the silicon wafer in the
seat, because the plate surface may be damaged
(Fig. 6,7). The needle holder containing a new needle
has to be adjusted after a silicon wafer dummy made of
duraluminum is installed in the nest. This enables one
not to damage neither the plate nor the needle.
Fig. 6. The second modification of the mechanical
adapter with rotation give possibility for quick
changing of the detector side (the adapter is in
rotation).
Fig. 7. Measurements using the mechanical adapter.
The wafer is in the adapter. The probes of the static
probe station are visible on the wafer.
4. AUTOMATIC BENCH FOR MEASURING
THE YIELD OF GOOD DSMD
In order to check the detector suitability one should
perform a large number of standard measurements at
separate strips. Performing these measurements
automatically, one can reduce the test period
substantially and avoid possible operator’s errors. To
this end, a bench is developed intended for automatic
measuring the DSMD parameters (Fig. 8). The bench
permits one to monitor the capacitance of coupling
capacitors and yield of good capacitors automatically.
The bench consists of a semi-automatic probe
station, an instrument measuring capacity, a CAMAC
crate and a computer. The probe station enables one to
move the object table with the detector in the horizontal
plane within the field 80×80 mm with the step multiple
of 25 µm and 10 µm along the coordinates X and Y,
respectively. The station also lifts or lowers the object
table with the detector providing the contact of the
detector with a stationary probe with precise positioning.
The probe has been described above. The detector is
fixed on the table with vacuum lock. The object table
Fig 8. Automatic bench for measuring DSMD
coupling capacitors.
44
Fig. 9. Block-diagram of the automatic bench: 1 -
computer; 2 - capacitance meter; 3 - probe station; 4 -
controller; 5 - supply unit; 6-7 are analog-to-digital
converters; 8 - control unit.
may be rotated around its axis and fixed. The probe
station is placed inside an opaque box. Fig. 9 presents
the block-diagram of the bench.
In order to test a detector, one should measure the
voltage drop across coupling capacitors of every strip
and their capacitance when a test voltage is applied via
the needle of a precise-positioned probe. The electric
scheme of measurements is depicted in Fig. 10.
The bench operates as follows:
the detector is fixed on the movable object table
and is displaced under the needle of a precise-positioned
probe;
Fig. 10. Electric scheme for measuring capacitance
of coupling capacitors: 1 - capacitance meter; 2-3 -
analog–to-digital converters; 4 - power supply; 5 -
object table; 6 - aluminum foil; 7 - micro–strip detector
(MSD); 8 - opaque box.
the object table is lifted and the probe is installed
on the first strip;
the opaque box is closed and the computer
initiates the measurement program.
On initiation the program requires introduction of
some parameters:
the number of steps without measurements (this
parameter enables one to move to any area of the
detector and start measurements there);
admissible deviation of the capacitance from the
normal value in %;
name of the file where the results of
measurements are saved.
The program performs the following operations:
table (detector) lifting;
readout from both analog-to-digital converters;
displaying a strip number, capacitance value of
the coupling capacitor and voltage drop across it on the
screen;
table lowering;
displacing along a prescribed direction with a
prescribed step.
Then the cycle is repeated.
There are two versions of the program differing in
the algorithm of determining the value of the normal
capacitance of a capacitor:
1. The version when an operator determines the value
of the normal capacitance.
2. Automatic determination of the normal
capacitance value.
With the first version the program measures the first
capacitor, displays its capacitance and voltage drop
across it and asks, "Can this value be regarded as
normal?" After "Yes", the program automatically
measures other capacitors comparing their capacitance
with this value.
With the second version the program automatically
measures all capacitors, chooses the most frequently
obtained capacitance value and takes it as normal. Then
the program analyzes all measurements and measures
again those strips for which the capacitance values of
coupling capacitors are above or below the admissible
deviation.
If the bench registers a zero capacitance (it is
possible only if the probe is not in contact with the
detector) the program terminates the measurements and
gives a sound signal. After correcting the probe
installation, there is an option to proceed with automatic
measurements from the same location. An option exists
for terminating the bench operation at any time.
The automatic bench has been employed for making
a set of measurements on 750-strip MSD and its
workability has been demonstrated. The bench measures
one side of detector (750 strips) [4, 5] during from 7 to
10 minutes. The time depends on the number of broken
capacitors.
ACKNOWLEDGEMENTS
The authors are thankful to A. Torgovkin for control
module preparation and I. Chervonny for the valuable
discussions. This work was supported by the Science
Ministry of Ukraine, contract no 2M/108-99 and by
INTAS under the Grant 96-0678.
REFERENCES
1. P. Kuijer, A. Kaplij, V. Kulibaba, N. Maslov,
V. Ovchinnik, S. Potin, A. Starodubtsev. Control
complex for a double-sided microstrip detector
production and tests. CERN, ALICE/99-45, Internal
Note/ITS, 5 October 1999.
2. V.V. Batavin, Yu.A. Kontsevoi, Yu.V. Fedorovich.
Measuring parameters of semiconductors and
structures. Moscow, “Radio I svyaz", 1985 (in
Russian).
3. L.B. Valdes. Resistivity measurements on germani-
um for transistors // IRE (Proc.) 1954, v. 42, No 2,
p. 420–427.
4. N. Maslov, V. Kulibaba, S. Potin, A. Starodubtsev,
P. Kuijer, A.P. de Haas, V. Perevertailo. Radiation
tolerance of single-sided microstrip detector with
Si3N4 insulator // Nuclear Physics B (Proc. Suppl.).
1999, No 78, p. 689-694.
5. A.P. de Haas, P. Kuijer, V. Kulibaba, N. Maslov,
V. Perevertailo, S. Potin, A. Starodubtsev.
Characteristics and radiation tolerance of a double-
sided microstrip detector with polysilicon biasing
resistors. CERN, ALICE/99-21, Internal Note/SIL, 6
April 1999.
45
P. Kuijer
Utrecht University, The Netherlands
PACS: 29.40.Wk
1. INTRODUCTION
2. MEASUREMENTS OF DETECTOR Si CHARACTERISTICS BEFORE AN INGOTS CUTTING
2.1. MEASURING EFFECTIVE LIFETIME OF NONEQUILIBRIUM CHARGE CARRIERS IN SEMICONDUCTOR INGOTS
2.2. MEASURING THE RESISTIVITY OF HIGH RESISTANCE SILICON
3. TECHNIQUES FOR STATIC CHARACTERISTICS INVESTIGATION OF A DSMD
3.1. PROBE STATION
3.2. MECHANICAL ADAPTER
4. AUTOMATIC BENCH FOR MEASURING THE YIELD OF GOOD DSMD
ACKNOWLEDGEMENTS
REFERENCES
|