The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge
The opportunity of use self-maintained plasma-beam discharge in an extended pulsing plasma diode of low pressure for making powerful sources of the soft X-rays is investigated. Conditions of formation of the self-maintained plasmabeam discharge are determined. The mode of making of dense high-temp...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2006
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Назва видання: | Вопросы атомной науки и техники |
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Цитувати: | The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge / V.N. Borisko, A.F. Tseluyko, D.V. Zinov’ev, V.T. Lazurik, I.K. Tarasov // Вопросы атомной науки и техники. — 2006. — № 6. — С. 225-227. — Бібліогр.: 5 назв. — англ. |
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irk-123456789-825502015-06-02T03:01:55Z The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge Borisko, V.N. Tseluyko, A.F. Zinov’ev, D.V. Lazurik, V.T. Tarasov, I.K. Low temperature plasma and plasma technologies The opportunity of use self-maintained plasma-beam discharge in an extended pulsing plasma diode of low pressure for making powerful sources of the soft X-rays is investigated. Conditions of formation of the self-maintained plasmabeam discharge are determined. The mode of making of dense high-temperature plasma on the basis of stannum ions in the discharge is shown. The stannum ions are used as a working element of a radiation sources at pulsing power of electron beam Ɋ~10…100 MW. Results of the examination on formation of the dense (np~1016 cm 3 ), small sizes (l<1 cm) plasma with the electron temperature Ɍe~100 eV in conditions of working material evaporation from the anode are given. The total contribution of energy to the discharge has made W < 20 J. 2006 Article The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge / V.N. Borisko, A.F. Tseluyko, D.V. Zinov’ev, V.T. Lazurik, I.K. Tarasov // Вопросы атомной науки и техники. — 2006. — № 6. — С. 225-227. — Бібліогр.: 5 назв. — англ. 1562-6016 PACS: 537.52 http://dspace.nbuv.gov.ua/handle/123456789/82550 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
topic |
Low temperature plasma and plasma technologies Low temperature plasma and plasma technologies |
spellingShingle |
Low temperature plasma and plasma technologies Low temperature plasma and plasma technologies Borisko, V.N. Tseluyko, A.F. Zinov’ev, D.V. Lazurik, V.T. Tarasov, I.K. The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge Вопросы атомной науки и техники |
description |
The opportunity of use self-maintained plasma-beam discharge in an extended pulsing plasma diode of low pressure
for making powerful sources of the soft X-rays is investigated. Conditions of formation of the self-maintained plasmabeam
discharge are determined. The mode of making of dense high-temperature plasma on the basis of stannum ions in
the discharge is shown. The stannum ions are used as a working element of a radiation sources at pulsing power of
electron beam Ɋ~10…100 MW. Results of the examination on formation of the dense (np~1016
cm
3
), small sizes
(l<1 cm) plasma with the electron temperature Ɍe~100 eV in conditions of working material evaporation from the anode
are given. The total contribution of energy to the discharge has made W < 20 J. |
format |
Article |
author |
Borisko, V.N. Tseluyko, A.F. Zinov’ev, D.V. Lazurik, V.T. Tarasov, I.K. |
author_facet |
Borisko, V.N. Tseluyko, A.F. Zinov’ev, D.V. Lazurik, V.T. Tarasov, I.K. |
author_sort |
Borisko, V.N. |
title |
The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge |
title_short |
The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge |
title_full |
The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge |
title_fullStr |
The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge |
title_full_unstemmed |
The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge |
title_sort |
formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge |
publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
publishDate |
2006 |
topic_facet |
Low temperature plasma and plasma technologies |
url |
http://dspace.nbuv.gov.ua/handle/123456789/82550 |
citation_txt |
The formation of the low-sized high density plasma structures in the self-maintained plasma-beam discharge / V.N. Borisko, A.F. Tseluyko, D.V. Zinov’ev, V.T. Lazurik, I.K. Tarasov // Вопросы атомной науки и техники. — 2006. — № 6. — С. 225-227. — Бібліогр.: 5 назв. — англ. |
series |
Вопросы атомной науки и техники |
work_keys_str_mv |
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first_indexed |
2025-07-06T09:10:33Z |
last_indexed |
2025-07-06T09:10:33Z |
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1836888133609717760 |
fulltext |
Problems of Atomic Science and Technology. 2006, 6. Series: Plasma Physics (12), p. 225-227 225
THE FORMATION OF THE LOW-SIZED HIGH DENSITY PLASMA
STRUCTURES IN THE SELF-MAINTAINED PLASMA-BEAM DISCHARGE
V.N. Borisko1, A.F. Tseluyko1, D.V. Zinov’ev1, V.T. Lazurik1, I.K. Tarasov2
1V.N.Karazin Kharkov National University, Kurchatov av. 31, Kharkov, 61108, Ukraine,
e-mail: Zinoviev@htuni.kharkov.ua;
2Institute of Plasma Physics, National Science Center “Kharkov Institute of Physics and
Technology”, Academicheskaya str. 1, Kharkov, 61108, Ukraine
The opportunity of use self-maintained plasma-beam discharge in an extended pulsing plasma diode of low pressure
for making powerful sources of the soft X-rays is investigated. Conditions of formation of the self-maintained plasma-
beam discharge are determined. The mode of making of dense high-temperature plasma on the basis of stannum ions in
the discharge is shown. The stannum ions are used as a working element of a radiation sources at pulsing power of
electron beam ~10…100 MW. Results of the examination on formation of the dense (np~1016 cm3), small sizes
(l<1 cm) plasma with the electron temperature e~100 eV in conditions of working material evaporation from the anode
are given. The total contribution of energy to the discharge has made W < 20 J.
PACS: 537.52
INTRODUCTION
Now progress in the area of nano-technology is bound
up with development of a photolithography which is
based on use of radiation with wave length ~ 10
nanometers. In this case the specific optical systems and
intensive point sources of radiation are used. As a
radiating element for radiation sources the dense plasma
(np ~ 1016…1018 cm3) with the electron temperature
~ 50…100 eV is used frequently. High electron
temperature is necessary for obtaining of multiply ionized
ions which at the subsequent recombination form the
radiation in a necessary range.
One of problems, which arises at the creation of soft X-
radiation sources for a photolithography in nano-
dimensional area, is the big impulse energy contribution
(W ~ 104…106 J) in devices which are used for this purpose
now (pinch [1-3] and plasma accelerators [4]). The attempt
to increase of the radiated power in these devices results to
very large thermal loadings on constructional elements and
to quick destruction of these elements.
For decrease of energy, which is brought to a discharge
cell, in this work the opportunity of formation low-sized
high-temperature plasma under the action of self-maintained
plasma-beam discharge (SMPBD) is investigated [5].
The presence in plasma, which transfers a current
through a discharge gap, the double electric layer of a
space charge with large voltage drop is the feature of such
discharge. In a double layer there is a counter acceleration
of powerful electron and ion beams. Between double
layer and anode the discharge current is transferred by the
electron beam. Thus there is an intensive heating of
plasma due to collective beam-plasma interacting.
Under conditions (Fig. 1) when the dense plasma HDHP
is formed in the near anode area of the discharge, and double
layer DL is localized on the external boundary of this
plasma, it is possible to carry out the effective heating of the
dense plasma. Thus, the dense plasma can be created by the
same electron beam due to vapor ionization of the anode. In
this case one part of the beam energy goes on the
evaporation of the anode material, and other part - on a
heating of plasma up to necessary temperature.
Fig. 1. The scheme of discharge area ( ) and qualitative
longitudinal distribution of potential (z) in the
discharge (b): C - cathode; A - anode; I - isolator;
LDCP - love temperature plasma; DL - double layer;
HDHP - dense high-temperature plasma; Vd - potential of
the discharge; VDL - double layer potential;
EB - electron beam; IB - ion beam
Because of a small amount of channels for
consumption of energy in a discharge cell, the use of
SMPBD can reduce the energy contribution to system
essentially. It opens up the prospects for creation of
effective dot source of the soft X-rays.
Important moment at the creation of a source of
radiation on the basis SMPBD is search of ways of hold-
in the double layer in the near anode area.
THE SHAME OF THE EXPERIMENTAL
DEVICE
Experiments on formation of small size high
temperature plasma in conditions of SMPBD were carried
out in the extended pulse plasma diode of low pressure.
The shame of the diode is shown on Fig. 2.
HDHPLDCP DL
A
I
Vd
(z)
z
VDL
0
IB
EB
b
mailto:Zinoviev@htuni.kharkov.ua
226
Fig. 2. The shame of the experimental device
The plasma diode consists of the cathode C and the
anode A, which are located in the center of the vacuum
chamber to provide the large distance to its walls (~20 cm).
The cathode was a tubular copper electrode (length is
30 mm, external diameter is 10 mm and internal diameter is
9 mm). Inside of the cathode in the ceramic isolator the
conical copper trigger electrode IE by length 30 mm and
diameter at the basis 5 mm is located. The rod copper anode
A has diameter 4 mm. The lateral surface of the anode is
protected by glass tubular isolator. Working surfaces of all
electrodes have been covered by a stannum layer with
thickness of 0,5 mm. The distance between end-walls of
cathode and anode could be changed from 3 up to 10 cm.
For decrease of the inductance of a discharge circuit
the switching device was not used. The cathode and the
anode directly connected to the battery of pulse
condensers Cp with capacity of 0,5…2,0 µF which was
charged from the power supply +Vd up to a voltage
1…15 kV. The anode was as a high-voltage electrode, and
the cathode have the ground potential. The discharge was
ignited with the help of a trigger electrode due to electric
breakdown on a surface of dielectric inside the tubular
cathode. The voltage to trigger electrode yielded through
the switchboard S from the battery of condensers Ci with
capacity 0,25…1,5 µF. The condensers were charged from
the power supply +Vi up to a voltage 1…5 kV. With the
help of inductance Li the duration and the current of a
trigger pulse changed.
For definition of localization of a double layer two
movable single probes 1 and 2 which registered the
plasma potential were used. Besides that, with the help of
probes the speed of expansion of the initial plasma was
defined. Signals from the probes were stored by means of
capacitor dividers of a voltage with the effective capacity
~1 pF.
THE EXPERIMENTAL RESULTS
The investigations were carried out at the residual gas
pressure ~10-5 torr when the basic working environment
for the maintenance of the discharge is the stannum
vapours. On Fig. 3 the oscillograms of a discharge current
and a discharge voltage, and probe potentials ( = 1 µF,
+Vd = 6 kV, Ci = 1,5 µF, +Vi = 4 kV, Li = 7 µH) are
shown.
The experiments have shown that the formation of
small-size high-temperature plasma in the system occurs
in three stages.
Fig. 3. Oscillograms of discharge current 1) - 5 kA/div,
discharge voltage; 2) - 2 kV/div., and also probe
potentials located on distance of 2 cm; 3) - 2 kV/div
and 1 cm; 4) - 2 kV/div from the cathode.
a) - sweep 5 µsec/div; b) - sweep 1 µsec/div
At the first stage (0 < T1 < 10 µs, Fig. 3a) the dense
cathode plasma is formed due to surface breakdown and
extended to the anode direction. At that the mode of the
vacuum diode with the plasma emitter of electrons takes
place. The electron beam, which is formed in an interval
between the front of cathode plasma and the anode,
bombards of the anode surface and causes occurrence of
stannum vapours in the anode area. The beam intensity
and intensity of evaporation of the anode material grow
with the approach of cathode plasma front to the anode.
The first stage Duration is defined by speed of extension
of cathode plasma vf, which was ~106 cm/s according to
probe measurements.
The second stage of the discharge evolution comes
after shorting of the discharge gap by cathode plasma
(10 < T2 < 23 µs). At that in the discharge gap filled by
plasma a double layer forms. At first (10 < t21 < 12 µs)
one double layer CDL formed near the cathode area. Total
voltage drop of the discharge concentrated on this layer
(VCDL ≈ Vd). Then (12 < t22 < 14 µs) one more double
layer ADL is formed near the anode area. Voltage
between the layers is progressively redistributed. During
Vp1 Vp2
+Vi
+VdVd
Ci
Id
Co
IE
Li
AC
P1 P2S
a
b
227
time 14 < t23 < 23 µs in the discharge there are two
consistent double layers with voltage drop VCDL ≈ 1,5 kV
and VADL ≈ 4,5 kV.
At the second stage the electron beam which is ignited
in a layer near the anode, prolongs to evaporate and ionize
the anode material intensively. It results to formation of
dense plasma. The layer in the cathode area heats up other
plasma of the discharge gap.
After creation of the dense hot plasma on the basis of
stannum vapors in the discharge gap the third stage there
comes. At this stage the inductive discharge occurs
(23 < T3 < 25 µs), and the discharge voltage is
redistributed on inductance of a discharge circuit.
However, during the period (23,4 <t31 < 23,8 µs) in the
discharge there is a layer in the anode area again. The
electron beam with a current 6 kA heats up the anode
plasma to a level when it is capable to provide the current
density to the anode jA ≈ 70 kA/cm2. The characteristic
sizes of dense plasma in anode area are commensurable
with the sizes of the anode working surface.
CONCLUSIONS
As a result of experiments the opportunity to use
SMPBD for formation of the small-sizes high-temperature
dense plasma on the basis of stannum ions in anode area
of the extended plasma diode is shown. For effective
evaporation of the anode material, vapour ionization and
collective hitting of plasma the opportunity of generation
of the electron beam in the double layer of a space charge
near to a anode working surface is present. For
confinement of a double layer in the anode area the
several conditions is necessary to carry out. First, the
power supply should provide current Io greater, than a
thermal current of plasma in the field of a minimum of
conductivity:
( )
( )
( )
( )
( )
sd
m
trTtrne
sdtrjI
e
e
tS
p
tS
o
r
rr
rrr
⋅
⋅
≈⋅> ∫∫ π
,8
4
,
,
min
,
where S (t) - external border of dense anode plasma.
Second, the minimum of density of the basic plasma
( )trnp ,min r of the discharge gap should be near external
border of the dense plasma S (t).
For decrease of sizes of dense plasma it is necessary to
reduce of the anode working surface.
This work has been supported STCU Project # 3368.
REFERENCES
1. Borisov V.M. et al.// Plasma Physics. 2002, v.28,
10, p. 952-956 (in Russian).
2. Usenko P.L. et al.// Priboru i tehnika experimenta.
2002, 3, p.93-100 (in Russian).
3. G. Niimi et al.// J. Phys. D. Appl. Phys. 2001, v. 34,
p. 1-4.
4. S. Hussain, S. Ahmad et al.// Physics Letters. 2006,
v.349, Iss. 1-4, p. 236-244.
5. E.I. Lutsenko, N.D. Sereda , A.F. Tselujko// Journal
of Technical Physics. 1988, v.58, 7, p. 1299-1309.
. , . , . , . , .
.
~10…100 .
(l<1 ) (np~1016 -3)
~100 W<20 .
. , . , . , . , .
.
~10…100 .
(l<1 ) (np~1016 -3) ~100
W<20 .
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