X-ray study of dopant state in highly doped semiconductor single crystals
Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The com...
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| Date: | 2011 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ. |
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oai:nasplib.isofts.kiev.ua:123456789-1176242025-06-03T16:28:51Z X-ray study of dopant state in highly doped semiconductor single crystals Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The combination of techniques of X-ray diffraction topography and high resolution X-ray diffractometry, higher sensitive to the crystal lattice strain than that traditionally used is taken as the basis for investigating the crystals with slight and strong absorption of X-rays. These methods were supplemented with digital processing of the topographic images of growth striations and electrical measurements. The work was supported by the Russian Foundation for Basic Research, project no. 06-02-1624 and by the Russian Foundation for Basic Research and the Government of Kaluga region, project no. 09-02-97516. 2011 Article X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.72.Dd, Ff, Ss; 81.05.Cy, Ea https://nasplib.isofts.kiev.ua/handle/123456789/117624 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| language |
English |
| description |
Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The combination of techniques of X-ray diffraction topography and high resolution X-ray diffractometry, higher sensitive to the crystal lattice strain than that traditionally used is taken as the basis for investigating the crystals with slight and strong absorption of X-rays. These methods were supplemented with digital processing of the topographic images of growth striations and electrical measurements. |
| format |
Article |
| author |
Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. |
| spellingShingle |
Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. X-ray study of dopant state in highly doped semiconductor single crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Shul’pina, I.L. Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. |
| author_sort |
Shul’pina, I.L. |
| title |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_short |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_full |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_fullStr |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_full_unstemmed |
X-ray study of dopant state in highly doped semiconductor single crystals |
| title_sort |
x-ray study of dopant state in highly doped semiconductor single crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| citation_txt |
X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2025-09-17T23:37:54Z |
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2025-09-17T23:37:54Z |
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