Light emission by point dipole located inside spherical (semiconductor) particle in the vicinity of a spherical metal particle
Proposed in this work is a theoretical model that enables to correctly calculate light emission characteristics of a hybrid nanosystem formed by a spherical semiconductor quantum dot (QD) and spherical metal nanoparticle (NP) when QD is excited by light. The QD that emits mainly dipole-type el...
Saved in:
| Date: | 2013 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Light emission by point dipole located inside spherical (semiconductor) particle in the vicinity of a spherical metal particle /Yu.V. Kryuchenko and D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 227-239. — Бібліогр.: 17 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Proposed in this work is a theoretical model that enables to correctly calculate
light emission characteristics of a hybrid nanosystem formed by a spherical
semiconductor quantum dot (QD) and spherical metal nanoparticle (NP) when QD is
excited by light. The QD that emits mainly dipole-type electromagnetic (EM) field can
not be considered as a point dipole at small separation distances between QD and NP (of
the same order as the QD size). However, only the “point dipole” concept of QD is used
in all currently known theoretical models of hybrid nanosystems. Correspondingly,
unlike a simulated “point dipole + spherical metal NP”, the real hybrid nanosystem is
nonspherical as a whole. In this work: i) relations have been obtained between the
coefficients of EM field multipole expansions in two spherical coordinate systems with
their origins in semiconductor QD and metal NP. As a result, spherical symmetry of
semiconductor QD and metal NP can be used separately to solve the equations related to
boundary conditions at their surfaces; ii) it has been shown that EM field emitted by QD
can be represented as a sum of contributions of all crystal unit cells forming QD and that
each unit cell can be considered as an emitting point dipole. The contribution of a
particular unit cell to the total EM field is determined by the exciton wave function;
iii) to be closer to the real situation, the contribution εib(ω) of interband transitions to
the NP permittivity has been taken into account in the visible spectral range. |
|---|