Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide
For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, optical and electrophysical methods, such as electronography, X-ray diff...
Saved in:
| Date: | 1999 |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide / Ye.F. Venger, V.V. Milenin, I.B. Ermolovich, R.V. Konakova, D.I. Voitsikhovskiy, I. Hotovy, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 124-132. — Бібліогр.: 8 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, optical and electrophysical methods, such as electronography, X-ray diffraction, atomic force microscopy, Auger electron spectroscopy, secondary-ion mass spectrometry, taking photoluminescence spectra and I - V curves. A physical model for contact formation was proposed. According to it, BxGa₁₋xAs (GaNxAs₁₋x) solid solutions are formed at the phase interfaces when titanium borides (nitrides) are deposited. The defects are produced in the semiconductor near-surface regions during heterostructure formation and further heat treatment. The correlation between the physico-chemical interactions at contact interfaces and the contact electrophysical parameters occurs through these defects. The objects of our investigation demonstrated high thermal stability. This was due to their two-layer structure formed by components having well-pronounced antidiffusion properties. As a result, the interdiffusion processes at the phase interfaces are drastically weakened. |
|---|