Characteristics of confined exciton states in silicon quantum wires
We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within effective mass and classical image force approximations. As a result, e...
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| Date: | 2003 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Characteristics of confined exciton states in silicon quantum wires / D.V. Korbutyak, Yu.V. Kryuchenko, I.M. Kupchak, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 172-182. — Бібліогр.: 16 назв. — англ. |
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