A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of sil...
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| Date: | 2003 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures / A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 487-491. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of silicon material. The effect implies that the exciton radiative lifetime becomes a nonmonotonous (oscillating) function of the nanocrystal (NC) size. As a result, in the calculated PL spectra the energy distance between PL peaks or PL minima practically determined by the mean NC size, while dispersion in NC sizes plays a minor role. The qualitative agreement between calculated PL spectra and PL spectra observed experimentally in porous silicon and nanocrystalline silicon (nc-Si) films counts in favor of the used
model of radiative exciton recombination. |
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