Exciton effects in band-edge electroluminescence of silicon barrier structures
A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen temperatures. Maximal values of the efficiency are restricted by the interband...
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| Datum: | 2004 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Exciton effects in band-edge electroluminescence of silicon barrier structures / A.V. Sachenko, A.P. Gorban, D.V. Korbutyak, V.P. Kostylyov, Yu.V. Kryuchenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 1-7. — Бібліогр.: 20 назв. — англ. |