Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure
Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures (Tann <= 270 ºС) results in an increase by a factor of 2-3 of the inten...
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| Date: | 2010 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure/ L.V. Borkovska, T.R. Stara, N.O. Korsunska, К.Yu. Pechers'ka, L.P. Germash, V.O.Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 202-208. — Бібліогр.: 37 назв. — англ. |