Carrier transport mechanisms in InSb diffusion p-n junctions
The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the temperature T = 77 K. Passivation and protection of mesa structures have been carried out using thin films of CdTe. Forward and reverse curre...
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| Date: | 2014 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Carrier transport mechanisms in InSb diffusion p-n junctions / A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 325-330. — Бібліогр.: 25 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The linearly-graded p-n junctions were prepared by diffusion of cadmium into
n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the
temperature T = 77 K. Passivation and protection of mesa structures have been carried
out using thin films of CdTe. Forward and reverse current-voltage characteristics were
investigated within the temperature range 77…156 K. It has been found that the total
dark current consists of generation-recombination and tunneling current components,
which are dominant at high (T = 120…156 K) and low (T < 120 K) temperatures,
respectively. Experimental results have been explained using the model of a
nonhomogeneous p-n junction. It has been shown that in the linearly-graded p-n junction
with the rather thick (~1 m) depletion region tunneling current flows through the states
related to dislocations in the depletion region. The performed estimation of electrical
parameters of diffusion InSb p-n junctions allows to predict behavior of InSb-based
photodiodes at operation temperatures T > 77 K. |
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