Carrier transport mechanisms in InSb diffusion p-n junctions
The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the temperature T = 77 K. Passivation and protection of mesa structures have been carried out using thin films of CdTe. Forward and reverse curre...
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| Datum: | 2014 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Carrier transport mechanisms in InSb diffusion p-n junctions / A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 325-330. — Бібліогр.: 25 назв. — англ. |
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