Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon
. Nanostructured silicon layers (3–60 nm) have been formed upon substrates of monocrystalline silicon with a very large area (100 cm2 ), multicrystalline and metallurgical silicon by stain etching. We studied optical and structural properties of nanostructured silicon using scanning tunnel micro...
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| Date: | 2012 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon / A.I. Luchenko, M.M. Melnichenko, K.V. Svezhentsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 333-337. — Бібліогр.: 6 назв. — англ. |
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oai:nasplib.isofts.kiev.ua:123456789-1187262025-02-23T17:13:58Z Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon Luchenko, A.I. Melnichenko, M.M. Svezhentsova, K.V. . Nanostructured silicon layers (3–60 nm) have been formed upon substrates of monocrystalline silicon with a very large area (100 cm2 ), multicrystalline and metallurgical silicon by stain etching. We studied optical and structural properties of nanostructured silicon using scanning tunnel microscopy, scanning electron microscopy, Auger electron spectroscopy, secondary ion mass spectrometry, and photoluminescence methods. Results of studying the nanostructured Si properties obtained using the method of chemical processing have confirmed an opportunity to create this multifunctional material with stable characteristics. The authors have developed the sensor systems with use of nanostructured silicon as a sensitive layer, which properties depend on thickness of the obtained layer and are controlled by parameters of the respective technological process. Using the example of the photoluminescent sensor with the nanostructured Si layer, it has been shown that such a sensor can be successfully used to detect small concentrations of toxins (pesticides phosalone 10⁻⁸ - 10⁻⁹ mol/l ) as well as for specific biological pollutants, such as protein components, polysaccharides, cells worsening the quality of products of biotechnological synthesis. 2012 Article Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon / A.I. Luchenko, M.M. Melnichenko, K.V. Svezhentsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 333-337. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 77.55.df, 78.55.Mb, 78.67.-n, 81.07.-b https://nasplib.isofts.kiev.ua/handle/123456789/118726 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
. Nanostructured silicon layers (3–60 nm) have been formed upon substrates of
monocrystalline silicon with a very large area (100 cm2
), multicrystalline and
metallurgical silicon by stain etching. We studied optical and structural properties of
nanostructured silicon using scanning tunnel microscopy, scanning electron microscopy,
Auger electron spectroscopy, secondary ion mass spectrometry, and photoluminescence
methods. Results of studying the nanostructured Si properties obtained using the method
of chemical processing have confirmed an opportunity to create this multifunctional
material with stable characteristics. The authors have developed the sensor systems with
use of nanostructured silicon as a sensitive layer, which properties depend on thickness
of the obtained layer and are controlled by parameters of the respective technological
process. Using the example of the photoluminescent sensor with the nanostructured Si
layer, it has been shown that such a sensor can be successfully used to detect small
concentrations of toxins (pesticides phosalone 10⁻⁸ - 10⁻⁹ mol/l ) as well as for specific
biological pollutants, such as protein components, polysaccharides, cells worsening the
quality of products of biotechnological synthesis. |
| format |
Article |
| author |
Luchenko, A.I. Melnichenko, M.M. Svezhentsova, K.V. |
| spellingShingle |
Luchenko, A.I. Melnichenko, M.M. Svezhentsova, K.V. Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Luchenko, A.I. Melnichenko, M.M. Svezhentsova, K.V. |
| author_sort |
Luchenko, A.I. |
| title |
Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon |
| title_short |
Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon |
| title_full |
Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon |
| title_fullStr |
Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon |
| title_full_unstemmed |
Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon |
| title_sort |
structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| citation_txt |
Structural properties, photoelectric and photoluminescent
characteristics of nanostructured silicon / A.I. Luchenko, M.M. Melnichenko, K.V. Svezhentsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 333-337. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT luchenkoai structuralpropertiesphotoelectricandphotoluminescentcharacteristicsofnanostructuredsilicon AT melnichenkomm structuralpropertiesphotoelectricandphotoluminescentcharacteristicsofnanostructuredsilicon AT svezhentsovakv structuralpropertiesphotoelectricandphotoluminescentcharacteristicsofnanostructuredsilicon |
| first_indexed |
2025-07-22T04:12:52Z |
| last_indexed |
2025-07-22T04:12:52Z |
| _version_ |
1838318955069964288 |