A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots
. Using the variational method in real space and the effective-mass theory, we present quite an advanced semi-analytic approach susceptible for calculating the binding energy Eb of Wannier excitons in semiconductor quantum dot structures with rectangular and parabolic shapes of the confining pote...
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| Date: | 2012 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 365-369. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | . Using the variational method in real space and the effective-mass theory, we
present quite an advanced semi-analytic approach susceptible for calculating the binding
energy Eb of Wannier excitons in semiconductor quantum dot structures with rectangular
and parabolic shapes of the confining potential in the so-called strong-confinement
regime. Illustration is given for CdS, ZnSe, CdSe, GaAs structures of crystallites for both
rectangular and parabolic quantum dots, and it displays a very good agreement between
the experimental and theoretical results reported in literature. |
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