The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
Studied in this work is the Rahman-Nat diffraction on a thin grating of refractive index in semiconductor, which was created by an interference pattern of two coherent laser beams. Numeral calculations showed that the maximal diffraction efficiency for the Rahman-Nat diffraction in the first orde...
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| Datum: | 2009 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Studied in this work is the Rahman-Nat diffraction on a thin grating of
refractive index in semiconductor, which was created by an interference pattern of two
coherent laser beams. Numeral calculations showed that the maximal diffraction
efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase
grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also
ascertained, that waves belonging to the nearby diffraction orders differ from each other
by π/2 in their phase. |
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