Low-temperature growth of diamond films using supersonic DC arcjet
Diamond film growth on silicon at substrate temperature between 180 to 360 oC has been studied. The influence of hydrocarbon source on growth conditions and on diamond quality has been also investigated. Several series of experiments were performed to investigate the influence of substrate temperatu...
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| Дата: | 2001 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Low-temperature growth of diamond films using supersonic DC arcjet / A. Romanyuk, H. Gottler, V. Popov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 187-191. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
oai:nasplib.isofts.kiev.ua:123456789-119272 |
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oai:nasplib.isofts.kiev.ua:123456789-1192722025-02-23T17:33:22Z Low-temperature growth of diamond films using supersonic DC arcjet Romanyuk, A. Gottler, H. Popov, V. Diamond film growth on silicon at substrate temperature between 180 to 360 oC has been studied. The influence of hydrocarbon source on growth conditions and on diamond quality has been also investigated. Several series of experiments were performed to investigate the influence of substrate temperature on the diamond growth rate and the diamond quality. The quality of the deposited diamond films was controlled with Raman spectroscopy. It was shown that using methane as hydrocarbon source the growth rate up to 1.5 μm/h can be achieved. The use of ethane leads to the lower growth rate, but the quality of diamond film, crystallite morphology are better. Decrease of the substrate temperature down to 180°C leads to smaller grain size as well as to decreasing of diamond impact in the film. 2001 Article Low-temperature growth of diamond films using supersonic DC arcjet / A. Romanyuk, H. Gottler, V. Popov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 187-191. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 68.55, 78.30, 81.15 https://nasplib.isofts.kiev.ua/handle/123456789/119272 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Diamond film growth on silicon at substrate temperature between 180 to 360 oC has been studied. The influence of hydrocarbon source on growth conditions and on diamond quality has been also investigated. Several series of experiments were performed to investigate the influence of substrate temperature on the diamond growth rate and the diamond quality. The quality of the deposited diamond films was controlled with Raman spectroscopy. It was shown that using methane as hydrocarbon source the growth rate up to 1.5 μm/h can be achieved. The use of ethane leads to the lower growth rate, but the quality of diamond film, crystallite morphology are better. Decrease of the substrate temperature down to 180°C leads to smaller grain size as well as to decreasing of diamond impact in the film. |
| format |
Article |
| author |
Romanyuk, A. Gottler, H. Popov, V. |
| spellingShingle |
Romanyuk, A. Gottler, H. Popov, V. Low-temperature growth of diamond films using supersonic DC arcjet Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Romanyuk, A. Gottler, H. Popov, V. |
| author_sort |
Romanyuk, A. |
| title |
Low-temperature growth of diamond films using supersonic DC arcjet |
| title_short |
Low-temperature growth of diamond films using supersonic DC arcjet |
| title_full |
Low-temperature growth of diamond films using supersonic DC arcjet |
| title_fullStr |
Low-temperature growth of diamond films using supersonic DC arcjet |
| title_full_unstemmed |
Low-temperature growth of diamond films using supersonic DC arcjet |
| title_sort |
low-temperature growth of diamond films using supersonic dc arcjet |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| citation_txt |
Low-temperature growth of diamond films using supersonic DC arcjet / A. Romanyuk, H. Gottler, V. Popov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 187-191. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT romanyuka lowtemperaturegrowthofdiamondfilmsusingsupersonicdcarcjet AT gottlerh lowtemperaturegrowthofdiamondfilmsusingsupersonicdcarcjet AT popovv lowtemperaturegrowthofdiamondfilmsusingsupersonicdcarcjet |
| first_indexed |
2025-07-22T04:20:08Z |
| last_indexed |
2025-07-22T04:20:08Z |
| _version_ |
1838319412834205696 |