Exciton-enhanced recombination in silicon at high concentrations of charge carriers
The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation at high concentrations of non-equilibrium or equilibrium charge carriers. In n-t...
Збережено в:
| Дата: | 2000 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Exciton-enhanced recombination in silicon at high concentrations of charge carriers / A.V. Sachenko, A.P. Gorban, V.P. Kostylyov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 5-10. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation at high concentrations of non-equilibrium or equilibrium charge carriers. In n-type material a correlation between Shockley-Reed-Hall lifetime values and a square-law recombination coefficient is found. This correlation is explained in terms of assumption that both Shockley-Reed-Hall lifetime, and non-radiative exciton annihilation time constant responsible for a square-law recombination, are determined by the same deep level. It is stated, that the mentioned regularities should essentially affect the bulk lifetime values in n-type silicon at doping concentration exceeding 10¹⁶ cm⁻³. |
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