Excitonic effects in band-edge luminescence of semiconductors at room temperatures
A theoretical analysis is developed for ascertaining the influence of exciton states on edge luminescence in different semiconductors at high temperatures and high levels of excitation. Screening effects and the Mott transition for excitons have been taken into account using simple relations obtaine...
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| Datum: | 2000 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Excitonic effects in band-edge luminescence of semiconductors at room temperatures / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 150-156. — Бібліогр.: 15 назв. — англ. |