About the nature of diffusion anisotropy in CdS crystals
Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction being more than one order faster as compared with its diffusion in parallel t...
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| Datum: | 2000 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | About the nature of diffusion anisotropy in CdS crystals / L.V. Borkovskaya, B.R.Dzhumaev, L.Yu. Khomenkova, N.E. Korsunskaya, I.V. Markevich, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 282-286. — англ. |