Mechanism of 6H-3C transformation in SiC
Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall eff...
Збережено в:
| Дата: | 2002 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mechanism of 6H-3C transformation in SiC / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 152-155. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall effect and EPR spectra for transformed crystals show its decreasing value in 3C-SiC. Data show appearance of new defects - donors and acceptors - that make nitrogen optically and electrically non-active. These defects accompany the process of transformation. |
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