Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix
Investigated in this paper have been polarization properties of photoluminescence in solid and porous nc-Si−SiOx light emitting structures passivated in HF vapor. These structures were produced by thermal vacuum evaporation of silicon monoxide SiO powder onto polished c-Si substrates. After annealin...
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| Date: | 2015 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix / K.V. Michailovska, I.Z. Indutnyi, O.O. Kudryavtsev, M.V. Sopinskyy, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 324-329. — Бібліогр.: 17 назв. — англ. |