Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics
Undoped as well as Li-, Ag-, Cu- and Zn-doped MgxZn₁₋xO ceramics with x = 0–0.20 were sintered at 1000 °C. Defect-related photoluminescence (PL) and PL excitation spectra were measured at room temperature in 400–800 nm and 250–400 nm spectral ranges, accordingly. Two types of PL bands were observed:...
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| Date: | 2015 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 344-348. — Бібліогр.: 17 назв. — англ. |