Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors
Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound shallow acceptors and donors make rather small or dominating contributions into t...
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| Datum: | 2002 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors / K.D. Glinchuk, A.V. Prokhorovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 353-361. — Бібліогр.: 6 назв. — англ. |
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oai:nasplib.isofts.kiev.ua:123456789-1213412025-02-23T17:40:50Z Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors Glinchuk, K.D. Prokhorovich, A.V. Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound shallow acceptors and donors make rather small or dominating contributions into the near-band-edge luminescence spectrum. It is shown (on the basis of an analysis of the near-band-edge luminescence spectrum of semi-insulating GaAs) that it is very probable for intensities of the near-band-edge luminescence lines to be determined by different states (isolated or bound) of shallow acceptors and donors in semiconductors of this type. 2002 Article Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors / K.D. Glinchuk, A.V. Prokhorovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 353-361. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 71.55.E, 78.55.E https://nasplib.isofts.kiev.ua/handle/123456789/121341 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound shallow acceptors and donors make rather small or dominating contributions into the near-band-edge luminescence spectrum. It is shown (on the basis of an analysis of the near-band-edge luminescence spectrum of semi-insulating GaAs) that it is very probable for intensities of the near-band-edge luminescence lines to be determined by different states (isolated or bound) of shallow acceptors and donors in semiconductors of this type. |
| format |
Article |
| author |
Glinchuk, K.D. Prokhorovich, A.V. |
| spellingShingle |
Glinchuk, K.D. Prokhorovich, A.V. Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Glinchuk, K.D. Prokhorovich, A.V. |
| author_sort |
Glinchuk, K.D. |
| title |
Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| title_short |
Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| title_full |
Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| title_fullStr |
Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| title_full_unstemmed |
Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| title_sort |
analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| citation_txt |
Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors / K.D. Glinchuk, A.V. Prokhorovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 353-361. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT glinchukkd analysisofthenearbandedgeluminescenceofsemiconductorscontainingisolatedandboundshallowacceptorsanddonors AT prokhorovichav analysisofthenearbandedgeluminescenceofsemiconductorscontainingisolatedandboundshallowacceptorsanddonors |
| first_indexed |
2025-07-22T04:23:36Z |
| last_indexed |
2025-07-22T04:23:36Z |
| _version_ |
1838319630365491200 |