Fabrication and electrical characteristics of nano black phosphorus thin film transistor
This text introduced a method to fabricate black phosphorus(BP) nanosheet field effect transistor(FET). The X ray diffraction analysis, scanning electron microscopy, and FET performance of the black phosphorus products were analyzed, and the output characteristic curves and the transfer characterist...
Saved in:
| Date: | 2016 |
|---|---|
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2016
|
| Series: | Functional Materials |
| Subjects: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Fabrication and electrical characteristics of nano black phosphorus thin film transistor / Wang Lie-long // Functional Materials. — 2016. — Т. 23, № 3. — С. 404-407. — Бібліогр.: 15 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineBe the first to leave a comment!