Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method
Relations between the Keldysh-Franz oscillations with electron parameters of semiconductor materials were used to derive qualitative data for homoepitaxial films n-GaAs (100) from their electroreflectance spectra. The spectra were measured using the Shottky barrier method at the temperature 300 K an...
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| Datum: | 2005 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method / P.A. Gentsar, A.I. Vlasenko, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 85-90. — Бібліогр.: 16 назв. — англ. |
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