Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
The method of electrophysical diagnostic of n⁺-n-n⁺ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of vertical ohmic contacts with a non-uniform doping level has been developed. Vertic...
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| Datum: | 2016 |
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| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes / P.M. Romanets, A.E. Belyaev, А.V. Sachenko, N.S. Boltovets, V.V. Basanets, R.V. Konakova, V.S. Slipokurov, А.А. Khodin, V.А. Pilipenko, V.V. Shynkarenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 366-370. — Бібліогр.: 9 назв. — англ. |
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