Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods

Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods

The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of 4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements were carried out within the ab plane using the stationary method. The thermal...

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Datum:2015
Hauptverfasser: Churiukova, O., Jeżowski, A., Stachowiak, P., Mucha, J., Litwick, Z., Perlin, P., Susk, T.
Format: Artikel
Sprache:English
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2015
Schriftenreihe:Физика низких температур
Schlagworte:
10th International Conference on Cryocrystals and Quantum Crystals (Final part)
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods / O. Churiukova, A. Jeżowski, P. Stachowiak, J. Mucha, Z. Litwicki, P. Perlin and T. Suski // Физика низких температур. — 2015. — Т. 41, № 7. — С. 725-728. — Бібліогр.: 9 назв. — англ.

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