Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods
The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of 4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements were carried out within the ab plane using the stationary method. The thermal...
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| Datum: | 2015 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2015
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| Schriftenreihe: | Физика низких температур |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods / O. Churiukova, A. Jeżowski, P. Stachowiak, J. Mucha, Z. Litwicki, P. Perlin and T. Suski // Физика низких температур. — 2015. — Т. 41, № 7. — С. 725-728. — Бібліогр.: 9 назв. — англ. |
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