Excitons in Nanosystems Consisting of Semiconductor Quantum Dots
As found, within the band gap of the quantum dot of zinc selenide, a zone of exciton states located at the bottom of the conduction band appears. As shown, a decrease in the band gap width for this nanosystem is conditioned by transition of the electron from quantum-dimensional level within the vale...
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Datum: | 2017 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | English |
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Інститут металофізики ім. Г.В. Курдюмова НАН України
2017
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Schriftenreihe: | Наносистеми, наноматеріали, нанотехнології |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Zitieren: | Pokutnyi S.I., Gorbyk P.P., Makhno S.M., Prokopenko S.L., Mazurenko R.V. / S.I. Pokutnyi, P.P. Gorbyk, S.M. Makhno, S.L. Prokopenko, R.V. Mazurenko // Наносистеми, наноматеріали, нанотехнології: Зб. наук. пр. — К.: РВВ ІМФ, 2017. — Т. 15, № 1. — С. 37-46. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of UkraineZusammenfassung: | As found, within the band gap of the quantum dot of zinc selenide, a zone of exciton states located at the bottom of the conduction band appears. As shown, a decrease in the band gap width for this nanosystem is conditioned by transition of the electron from quantum-dimensional level within the valence band of the quantum dot to the levels of the zone of exciton states. The dependence of the energy of a ground state of an exciton on the radius of quantum dot is obtained using a modified method of the effective mass. |
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