Radiation induced defects in M₁₋ₓPrₓF₂₊ₓ (M²⁺ = Ca, Sr, Ba, x = 0.35) solid solutions

Radiation-induced processes in M₁₋ₓPrₓF₂₊ₓ (M²⁺ = Ca, Sr, Ba, x = 0.35) solid solutions have been studied. It is shown that the radiation coloration of M₀.₆₅Pr₀.₃₅F₂₃₅ crystals is due to the trapping of charge carriers at anion sublattice defects. The efficiency of color centers formation in the inv...

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Bibliographic Details
Date:2012
Main Authors: Boiaryntseva, I.A., Shiran, N.V., Gektin, A.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2012
Series:Functional Materials
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Radiation induced defects in M₁₋ₓPrₓF₂₊ₓ (M²⁺ = Ca, Sr, Ba, x = 0.35) solid solutions / I.A. Boiaryntseva, N.V. Shiran, A.V. Gektin // Functional Materials. — 2012. — Т. 19, № 3. — С. 313-318. — Бібліогр.: 28 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:Radiation-induced processes in M₁₋ₓPrₓF₂₊ₓ (M²⁺ = Ca, Sr, Ba, x = 0.35) solid solutions have been studied. It is shown that the radiation coloration of M₀.₆₅Pr₀.₃₅F₂₃₅ crystals is due to the trapping of charge carriers at anion sublattice defects. The efficiency of color centers formation in the investigated solid solutions grows in the row Ca —> Sr —> Ba. It may be caused by the increase of the pre-irradiation defects as a result of the different cluster types formation in M₀.₆₅Pr₀.₃₅F₂₃₅ mixed systems.