APA (7th ed.) Citation

Zaitsev, R., Kopach, V., Kirichenko, M., Doroshenko, A., & Khrypunov, G. (2011). Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon. НТК «Інститут монокристалів» НАН України.

Chicago Style (17th ed.) Citation

Zaitsev, R.V, V.R Kopach, M.V Kirichenko, A.N Doroshenko, and G.S Khrypunov. Dependence of Minority Charge Carriers Lifetime on Point Defects Type and Their Concentration in Single-crystal Silicon. НТК «Інститут монокристалів» НАН України, 2011.

MLA (8th ed.) Citation

Zaitsev, R.V, et al. Dependence of Minority Charge Carriers Lifetime on Point Defects Type and Their Concentration in Single-crystal Silicon. НТК «Інститут монокристалів» НАН України, 2011.