Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon
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Date: | 2011 |
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Main Authors: | Zaitsev, R.V., Kopach, V.R., Kirichenko, M.V., Doroshenko, A.N., Khrypunov, G.S. |
Format: | Article |
Language: | English |
Published: |
НТК «Інститут монокристалів» НАН України
2011
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Series: | Functional Materials |
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Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Cite this: | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ. |
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