Transient mode features at sapphire growing by horizontal directional crystallization

The behavior of the crystal/alumina melt boundary has been studied at the start and final stages of sapphire growing by horizontal directional crystallization. At a constant pulling speed of the crystal into the cold zone, the time dependence of the melt crystallization rate may behave nonmonotonica...

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Bibliographic Details
Date:2009
Main Authors: Barannik, S.V., Kanischev, V.N., Nizhankovsky, S.V., Stepanenko, A.M.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2009
Series:Functional Materials
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Transient mode features at sapphire growing by horizontal directional crystallization // S.V. Barannik, V.N. Kanischev, S.V. Nizhankovsky, A.M. Stepanenko // Functional Materials. — 2009. — Т. 16, № 4. — С. 498-500. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:The behavior of the crystal/alumina melt boundary has been studied at the start and final stages of sapphire growing by horizontal directional crystallization. At a constant pulling speed of the crystal into the cold zone, the time dependence of the melt crystallization rate may behave nonmonotonically. The crystallization front oscillations in the initial transient process that was predicted by numerical simulation has been confirmed experimentally.