Transient mode features at sapphire growing by horizontal directional crystallization

The behavior of the crystal/alumina melt boundary has been studied at the start and final stages of sapphire growing by horizontal directional crystallization. At a constant pulling speed of the crystal into the cold zone, the time dependence of the melt crystallization rate may behave nonmonotonica...

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Datum:2009
Hauptverfasser: Barannik, S.V., Kanischev, V.N., Nizhankovsky, S.V., Stepanenko, A.M.
Format: Artikel
Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2009
Schriftenreihe:Functional Materials
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Transient mode features at sapphire growing by horizontal directional crystallization // S.V. Barannik, V.N. Kanischev, S.V. Nizhankovsky, A.M. Stepanenko // Functional Materials. — 2009. — Т. 16, № 4. — С. 498-500. — Бібліогр.: 6 назв. — англ.

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