Integer quantum Hall effect and topological phase transitions in silicene
We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at ν = 0, ±2, ±6, ....
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| Date: | 2017 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики конденсованих систем НАН України
2017
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| Series: | Condensed Matter Physics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Integer quantum Hall effect and topological phase transitions in silicene / Y.L. Liu, G.X. Luo, N. Xu, H.Y. Tian, C.D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 4. — С. 43701: 1–7. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase
transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at ν = 0, ±2, ±6, . . ., and a conventional QHE
near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of
extended levels toward the band center, in which higher plateaus disappear first. However, the center ν = 0
Hall plateau is more sensitive to disorder and disappears at a relatively weak disorder strength. Moreover, the
combination of an electric field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase transitions from a topological insulator to a band insulator at the charge neutrality point (CNP), accompanied by
additional quantum Hall conductivity plateaus. |
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